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Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures

  • US 7,790,543 B2
  • Filed: 01/11/2008
  • Issued: 09/07/2010
  • Est. Priority Date: 01/11/2008
  • Status: Expired due to Fees
First Claim
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1. A method of fabricating a device structure on an insulating layer, the method comprising:

  • forming a first semiconductor body with a first sidewall that extends toward the insulating layer;

    forming a second semiconductor body having a second sidewall that extends toward the insulating layer;

    doping the first semiconductor body to form a source and a drain;

    forming a gate dielectric layer extending to the insulating layer at a location between the first sidewall of the first semiconductor body and the second sidewall of the second semiconductor body; and

    partially removing the second semiconductor body to define a gate electrode configured to control carrier flow in a channel between the source and the drain of the first semiconductor body,wherein the gate dielectric layer is formed by concurrently growing a first silicon dioxide layer on the first sidewall of the first semiconductor body and a second silicon dioxide on the second sidewall of the second semiconductor body with a thermal oxidation process.

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