Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes
First Claim
1. A semiconductor device comprising:
- a photoelectric conversion element having a square plane;
a current mirror circuit including a reference thin film transistor and a plurality of output thin film transistors, the current mirror circuit amplifying an output of the photoelectric conversion element;
a high-potential electrode arranged at a first side of the photoelectric conversion element; and
a low-potential electrode arranged at a second side of the photoelectric conversion element;
wherein both the reference thin film transistor and the plurality of output thin film transistors are n-type thin film transistors,wherein one of source and drain electrodes of the reference thin film transistor is electrically connected to the high-potential electrode through the photoelectric conversion element,wherein one of source and drain electrodes of each of the plurality of output thin film transistors is electrically connected to the high-potential electrode,wherein the other of the source and drain electrodes of the reference thin film transistor is electrically connected to the low-potential electrode,wherein the other of the source and drain electrodes of each of the plurality of output thin film transistors is electrically connected to the low-potential electrode,wherein the plurality of output thin film transistors are provided in an L-shape region extending from a vicinity of the high-potential electrode to a vicinity of the low-potential electrode along the first side and the second side, andwherein the reference thin film transistor is provided in the vicinity of the low-potential electrode.
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Accused Products
Abstract
To suppress a decrease in photosensitivity of a photoelectric conversion element provided in a semiconductor device by reducing the parasitic resistance of an amplifier circuit. In addition, the amplifier circuit which amplifies the output current of the photoelectric conversion element is operated stably. A semiconductor device includes a photoelectric conversion element, a current mirror circuit having at least two thin film transistors, a high-potential power supply electrically connected to each of the thin film transistors, and a low-potential power supply electrically connected to each of the thin film transistors. When a reference thin film transistor is an n-type, the reference thin film transistor is placed closer to the low-potential power supply than an output thin film transistor is. When a reference thin film transistor is a p-type, the reference thin film transistor is placed closer to the high-potential power supply than an output thin film transistor is.
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Citations
12 Claims
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1. A semiconductor device comprising:
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a photoelectric conversion element having a square plane; a current mirror circuit including a reference thin film transistor and a plurality of output thin film transistors, the current mirror circuit amplifying an output of the photoelectric conversion element; a high-potential electrode arranged at a first side of the photoelectric conversion element; and a low-potential electrode arranged at a second side of the photoelectric conversion element; wherein both the reference thin film transistor and the plurality of output thin film transistors are n-type thin film transistors, wherein one of source and drain electrodes of the reference thin film transistor is electrically connected to the high-potential electrode through the photoelectric conversion element, wherein one of source and drain electrodes of each of the plurality of output thin film transistors is electrically connected to the high-potential electrode, wherein the other of the source and drain electrodes of the reference thin film transistor is electrically connected to the low-potential electrode, wherein the other of the source and drain electrodes of each of the plurality of output thin film transistors is electrically connected to the low-potential electrode, wherein the plurality of output thin film transistors are provided in an L-shape region extending from a vicinity of the high-potential electrode to a vicinity of the low-potential electrode along the first side and the second side, and wherein the reference thin film transistor is provided in the vicinity of the low-potential electrode. - View Dependent Claims (2, 3)
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4. A semiconductor device comprising:
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a photoelectric conversion element having a square plane; a current mirror circuit including a reference thin film transistor and a plurality of output thin film transistors, the current mirror circuit amplifying an output of the photoelectric conversion element; a high-potential electrode arranged at a first side of the photoelectric conversion element; and a low-potential electrode arranged at a second side of the photoelectric conversion element; wherein both the reference thin film transistor and the plurality of output thin film transistors are n-type thin film transistors, wherein one of source and drain electrodes of the reference thin film transistor is electrically connected to the high-potential electrode through the photoelectric conversion element, wherein one of source and drain electrodes of each of the plurality of output thin film transistors is electrically connected to the high-potential electrode, wherein the other of the source and drain electrodes of the reference thin film transistor is electrically connected to the low-potential electrode, wherein the other of the source and drain electrodes of each of the plurality of output thin film transistors is electrically connected to the low-potential electrode, wherein a current path between the reference thin film transistor and the low-potential electrode is shorter than a current path between each of the plurality of output thin film transistors and the low-potential electrode, wherein the plurality of output thin film transistors are provided in an L-shape region extending from a vicinity of the high-potential electrode to a vicinity of the low-potential electrode along the first side and the second side, and wherein the reference thin film transistor is provided in the vicinity of the low-potential electrode. - View Dependent Claims (5, 6)
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7. A semiconductor device comprising:
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a photoelectric conversion element having a square plane; a current mirror circuit including a reference thin film transistor and a plurality of output thin film transistors, the current mirror circuit amplifying an output of the photoelectric conversion element; a high-potential electrode arranged at a first side of the photoelectric conversion element; a low-potential electrode arranged at a second side of the photoelectric conversion element; a battery electrically connected to the high-potential electrode and the low-potential electrode; an antenna for receiving a signal; a rectifier circuit for rectifying the signal received at the antenna; and a charging circuit for charging the battery based on an output of the rectifier circuit, wherein both the reference thin film transistor and the plurality of output thin film transistors are n-type thin film transistors, wherein one of source and drain electrodes of the reference thin film transistor is electrically connected to the high-potential electrode through the photoelectric conversion element, wherein one of source and drain electrodes of each of the plurality of output thin film transistors are electrically connected to the high-potential electrode, wherein the other of the source and drain electrodes of the reference thin film transistor is electrically connected to the low-potential electrode, wherein the other of the source and drain electrodes of each of the plurality of output thin film transistors are electrically connected to the low-potential electrode, wherein the plurality of output thin film transistors are provided in an L-shape region extending from a vicinity of the high-potential electrode to a vicinity of the low-potential electrode along the first side and the second side, and wherein the reference thin film transistor is provided in the vicinity of the low-potential electrode. - View Dependent Claims (8, 9)
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10. A semiconductor device comprising:
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a photoelectric conversion element having a square plane; a current mirror circuit including a reference thin film transistor and a plurality of output thin film transistors, the current mirror circuit amplifying an output of the photoelectric conversion element; a high-potential electrode arranged at a first side of the photoelectric conversion element; a low-potential electrode arranged at a second side of the photoelectric conversion element; a battery electrically connected to the high-potential electrode and the low-potential electrode; an antenna for receiving a signal; a rectifier circuit for rectifying the signal received at the antenna; and a charging circuit for charging the battery based on an output of the rectifier circuit, wherein both the reference thin film transistor and the plurality of output thin film transistors are n-type thin film transistors, wherein one of source and drain electrodes of the reference thin film transistor is electrically connected to the high-potential electrode through the photoelectric conversion element, wherein one of source and drain electrodes of each of the plurality of output thin film transistors are electrically connected to the high-potential electrode, wherein the other of the source and drain electrodes of the reference thin film transistor is electrically connected to the low-potential electrode, wherein the other of the source and drain electrodes of each of the plurality of output thin film transistors are electrically connected to the low-potential electrode, wherein a current path between the reference thin film transistor and the low-potential electrode is shorter than a current path between each of the plurality of output thin film transistors and the low-potential electrode, wherein the plurality of output thin film transistors are provided in an L-shape region extending from a vicinity of the high-potential electrode to a vicinity of the low-potential electrode along the first side and the second side, and wherein the reference thin film transistor is provided in the vicinity of the low-potential electrode. - View Dependent Claims (11, 12)
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Specification