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Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes

  • US 7,791,012 B2
  • Filed: 09/17/2007
  • Issued: 09/07/2010
  • Est. Priority Date: 09/29/2006
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a photoelectric conversion element having a square plane;

    a current mirror circuit including a reference thin film transistor and a plurality of output thin film transistors, the current mirror circuit amplifying an output of the photoelectric conversion element;

    a high-potential electrode arranged at a first side of the photoelectric conversion element; and

    a low-potential electrode arranged at a second side of the photoelectric conversion element;

    wherein both the reference thin film transistor and the plurality of output thin film transistors are n-type thin film transistors,wherein one of source and drain electrodes of the reference thin film transistor is electrically connected to the high-potential electrode through the photoelectric conversion element,wherein one of source and drain electrodes of each of the plurality of output thin film transistors is electrically connected to the high-potential electrode,wherein the other of the source and drain electrodes of the reference thin film transistor is electrically connected to the low-potential electrode,wherein the other of the source and drain electrodes of each of the plurality of output thin film transistors is electrically connected to the low-potential electrode,wherein the plurality of output thin film transistors are provided in an L-shape region extending from a vicinity of the high-potential electrode to a vicinity of the low-potential electrode along the first side and the second side, andwherein the reference thin film transistor is provided in the vicinity of the low-potential electrode.

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