Semiconductor light emitting device and method for manufacturing the same
First Claim
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1. A semiconductor light emitting device, comprising:
- a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate; and
a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer,wherein at least one of the concave patterns comprises a width larger of a center position than a width of a concave pattern aligned at outer side position in the center area of substrate,wherein the center position comprises an area that is equal to or less than a ⅓
radius of the substrate.
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Abstract
Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer.
6 Citations
20 Claims
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1. A semiconductor light emitting device, comprising:
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a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate; and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein at least one of the concave patterns comprises a width larger of a center position than a width of a concave pattern aligned at outer side position in the center area of substrate, wherein the center position comprises an area that is equal to or less than a ⅓
radius of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor light emitting device comprising:
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a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate; and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein a width of concave patterns formed at a center area of the substrate comprises a width which becomes gradually narrower toward an outer side position. - View Dependent Claims (10, 11, 12)
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13. A semiconductor light emitting device comprising:
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a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate; and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, wherein at least one of the concave patterns comprises a width larger of a center position than a width of a concave pattern at an other position of the substrate by 1.5 to 2.5 times. - View Dependent Claims (14, 15, 16, 17)
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18. A method for manufacturing a semiconductor light emitting device, the method comprising the steps of:
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forming concave-convex patterns in at least a portion of a backside of a substrate; and forming a light emitting structure comprising an active layer on the substrate, wherein at least one of the concave patterns comprises a width larger of a center position than a width of a concave pattern at an other position of the substrate by 1.5 to 2.5 times. - View Dependent Claims (19, 20)
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Specification