Method for manufacturing semiconductor device
First Claim
1. A semiconductor device comprising:
- a substrate;
a base film formed over a surface of the substrate;
an element layer formed over the base film; and
an insulating layer formed over the element layer;
wherein the element layer includes a plurality of thin film transistors and an antenna which is electrically connected to at least one of the plurality of thin film transistors,wherein the antenna is arranged to receive an electromagnetic wave to generate a voltage which is used to operate the plurality of thin film transistors,wherein each of side surfaces of the substrate, the base film, the element layer, and the insulating layer has a curved shape,wherein a bottom surface of the base film, which is in contact with the surface of the substrate, has a larger area than a top surface of the base film,wherein a bottom surface of the element layer, which is in contact with the top surface of the base film, has a larger area than a top surface of the element layer, andwherein a bottom surface of the insulating layer, which is in contact with the top surface of the element layer, has a larger area than a top surface of the insulating layer.
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Abstract
It is an object of the present invention to provide a method for manufacturing a semiconductor device, which is flexible and superiority in physical strength. As a method for manufacturing a semiconductor device, an element layer including a plurality of integrated circuits is formed over one surface of a substrate; a hole having curvature is formed in part of one surface side of the substrate; the substrate is thinned (for example, the other surface of the substrate is ground and polished); and the substrate is cut off so that a cross section of the substrate has curvature corresponding to a portion where the hole is formed; whereby a laminated body including an integrated circuit is formed. Further, a thickness of the substrate, which is polished, is 2 μm or more and 50 μm or less.
16 Citations
11 Claims
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1. A semiconductor device comprising:
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a substrate; a base film formed over a surface of the substrate; an element layer formed over the base film; and an insulating layer formed over the element layer; wherein the element layer includes a plurality of thin film transistors and an antenna which is electrically connected to at least one of the plurality of thin film transistors, wherein the antenna is arranged to receive an electromagnetic wave to generate a voltage which is used to operate the plurality of thin film transistors, wherein each of side surfaces of the substrate, the base film, the element layer, and the insulating layer has a curved shape, wherein a bottom surface of the base film, which is in contact with the surface of the substrate, has a larger area than a top surface of the base film, wherein a bottom surface of the element layer, which is in contact with the top surface of the base film, has a larger area than a top surface of the element layer, and wherein a bottom surface of the insulating layer, which is in contact with the top surface of the element layer, has a larger area than a top surface of the insulating layer. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a substrate; a base film formed over a surface of the substrate; an element layer formed over the base film; and an insulating layer formed over the element layer; wherein the element layer includes a plurality of integrated circuits and an antenna; wherein the antenna is arranged to receive an electromagnetic wave to generate an alternating current voltage which is used to operate the plurality of integrated circuits, wherein each of side surfaces of the substrate, the base film, the element layer, and the insulating layer has a curved shape, wherein a bottom surface of the base film, which is in contact with the surface of the substrate, has a larger area than a top surface of the base film, wherein a bottom surface of the element layer, which is in contact with the top surface of the base film, has a larger area than a top surface of the element layer, and wherein a bottom surface of the insulating layer, which is in contact with the top surface of the element layer, has a larger area than a top surface of the insulating layer. - View Dependent Claims (7, 8, 9, 10, 11)
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Specification