Method of making a deep junction for electrical crosstalk reduction of an image sensor
First Claim
Patent Images
1. An image sensor semiconductor device, comprising:
- a semiconductor substrate having a front surface and a back surface;
a plurality of sensor elements formed on the front surface of the substrate, each of the plurality of sensor elements configured to receive light directed towards the back surface; and
an aluminum doped feature formed in the substrate and extending from the back surface, but not extending to the front surface, the aluminum doped feature disposed horizontally between two adjacent elements of the plurality of sensor elements and vertically between the back surface and the plurality of sensor elements.
2 Assignments
0 Petitions
Accused Products
Abstract
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a substrate having a front surface and a back surface; a plurality of sensor elements formed on the front surface of the substrate, each of the plurality of sensor elements configured to receive light directed towards the back surface; and an aluminum doped feature formed in the substrate and disposed horizontally between two adjacent elements of the plurality of sensor elements and vertically between the back surface and the plurality of sensor elements.
117 Citations
14 Claims
-
1. An image sensor semiconductor device, comprising:
-
a semiconductor substrate having a front surface and a back surface; a plurality of sensor elements formed on the front surface of the substrate, each of the plurality of sensor elements configured to receive light directed towards the back surface; and an aluminum doped feature formed in the substrate and extending from the back surface, but not extending to the front surface, the aluminum doped feature disposed horizontally between two adjacent elements of the plurality of sensor elements and vertically between the back surface and the plurality of sensor elements. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. An image sensor semiconductor device, comprising:
-
a semiconductor substrate having a front surface and a back surface; a sensor element formed in the semiconductor substrate; an inter-level dielectric (ILD) formed on the front surface of the semiconductor substrate; conductive features disposed in the ILD; and a junction of aluminum dopants formed in the semiconductor substrate and extending from the back surface, but not extending to the front surface, the junction of aluminum dopants disposed horizontally around the sensor element in a top view of the semiconductor substrate. - View Dependent Claims (8, 9, 10)
-
-
11. An image sensor semiconductor device, comprising:
-
a substrate having a front surface and a back surface, the substrate including a crystalline silicon configured in one of <
100> and
<
111>
orientation;a plurality of sensor elements formed at the front surface of the substrate, each of the plurality of sensor elements configured to receive light directed towards the back surface; and an aluminum doped feature formed in the substrate and extending from the back surface, but not extending to the front surface, the aluminum doped feature disposed horizontally between two adjacent elements of the plurality of sensor elements and vertically between the back surface and the plurality of sensor elements, wherein the crystalline silicon encourages the aluminum doped feature to form in the substrate at a vertical/horizontal ratio greater than about 3;
1. - View Dependent Claims (12, 13, 14)
-
Specification