Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric

• US 7,791,434 B2
• Filed: 12/22/2004
• Issued: 09/07/2010
• Est. Priority Date: 12/22/2004
• Status: Expired due to Fees

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies Wireless IP Singapore Pte Limited (Broadcom, Inc.)
• Inventors: Feng, Hongjun, Fazzio, Ronald S.
• Primary Examiner(s): Summons; Barbara
• Application Number:
  US11/021,085
• Publication Number:
  US 20060132262A1
• Time in Patent Office: 2,085 Days
• Field of Search: 333/187, 333/189, 310/322, 310/324, 310/335, 310/367
• US Class Current: 333/187
• CPC Class Codes: H03H 9/02118 of lateral leakage between adjacent resonators
• CPC Class Codes: H03H 9/173 Air-gaps

Abstract

An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, and a second electrode. The substrate has a first surface and the first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material, and the second electrode lies in a first plane and has an edge. The layer of piezoelectric material has a recessed feature adjacent the edge of the second electrode.

Claims

1. An acoustic resonator comprising:

a substrate;

a first electrode adjacent the substrate;

a piezoelectric layer adjacent the first electrode;

a trench provided in the piezoelectric layer, wherein the trench is configured to reduce energy loss in the acoustic resonator;

a second electrode adjacent the piezoelectric layer, the second electrode lying in a first plane and having an edge; and

an acoustic mirror is disposed in the substrate, wherein the first electrode spans the acoustic mirror.

2. The acoustic resonator of claim 1 further including a passivation layer adjacent the second electrode, the passivation layer lying in a second plane that is generally parallel to the first plane and having an edge.

3. The acoustic resonator of claim 1, wherein the trench in the piezoelectric layer is outside the edge of the second electrode.

4. The acoustic resonator of claim 3, wherein the trench extends around a substantial portion of the perimeter of the second electrode.

5. The acoustic resonator of claim 3 wherein the trench is offset from the edge of second electrode by zero to 10s of microns.

6. The acoustic resonator of claim 1 further including fill material in the trench of the piezoelectric layer.

7. The acoustic resonator of claim 6, wherein the second electrode comprises a material that is the same as the fill material in the trench.

8. The acoustic resonator of claim 6, wherein the fill material is a material selected from the group comprising dielectrics, metals, piezoelectrics, Mo, Pt, Al, Cu, W, Au, Ag, polyimide, benzocyclobutene, SiO₂, Si₃N₄, AlN, ZnO, LiNbO₃, PZT, LiTaO₃, and Al₂O₃.

9. The acoustic resonator of claim 1 wherein the trench has a depth in the piezoelectric layer that is on the order of hundreds to thousands of angstroms and a width on the order of fractions of a micron to microns.

10. An acoustic resonator comprising:

a substrate having a first surface;

a first electrode adjacent the first surface of the substrate;

a layer of piezoelectric material adjacent the first electrode;

a trench provided in the layer of piezoelectric material;

a second electrode adjacent the layer of piezoelectric material, the second electrode lying in a first plane and having an edge; and

a passivation layer adjacent the second electrode, the passivation layer lying in a second plane that is generally parallel to the first plane and having an edge;

wherein the trench is configured to reduce energy loss in the acoustic resonator.

11. The acoustic resonator of claim 10 wherein a depression is formed in the first surface of the substrate and wherein the first electrode spans the depression.

12. The acoustic resonator of claim 10 wherein an acoustic mirror is formed in the first surface of the substrate and wherein the first electrode spans the acoustic mirror.

13. The acoustic resonator of claim 10 further including fill material in the trench of the layer of piezoelectric material.

14. The acoustic resonator of claim 13, wherein the second electrode comprises a material that is the same as the fill material in the trench.

15. The acoustic resonator of claim 13 wherein the fill material is a material selected from the group comprising dielectrics, metals, piezoelectrics, Mo, Pt, Al, Cu, W, Au, Ag, polyimide, benzocyclobutene, SiO₂, Si₃N₄, AlN, ZnO, LiNbO₃, PZT, LiTaO₃, and Al₂O₃.

16. The acoustic resonator of claim 10, wherein the trench in the piezoelectric layer is outside the edge of the second electrode.

17. An acoustic resonator comprising:

a substrate;

a first electrode adjacent the substrate;

a piezoelectric layer adjacent the first electrode;

a trench provided in the piezoelectric layer; and

a second electrode adjacent the piezoelectric layer, the second electrode lying in a first plane and having an edge, wherein the trench has a depth in the piezoelectric layer that is on the order of hundreds to thousands of angstroms and a width on the order of fractions of a micron to microns.

18. An acoustic resonator as claimed in claim 17, wherein the trench in the piezoelectric layer is outside the edge of the second electrode.

19. An acoustic resonator comprising:

a substrate;

a first electrode adjacent the substrate;

a piezoelectric layer adjacent the first electrode;

a trench provided in the piezoelectric layer;

fill material in the trench of the piezoelectric layer; and

a second electrode adjacent the piezoelectric layer, the second electrode lying in a first plane and having an edge.

20. An acoustic resonator as claimed in claim 19, wherein the second electrode comprises a material that is the same as the fill material in the trench.

21. An acoustic resonator as claimed in claim 19, wherein the fill material is a material selected from the group comprising dielectrics, metals, piezoelectrics, Mo, Pt, Al, Cu, W, Au, Ag, polyimide, benzocyclobutene, SiO₂, Si₃N₄, AlN, ZnO, LiNbO₃, PZT, LiTaO₃, and Al₂O₃.

22. An acoustic resonator comprising:

a substrate having a first surface;

a first electrode adjacent the first surface of the substrate;

a layer of piezoelectric material adjacent the first electrode;

a second electrode adjacent the layer of piezoelectric material, the second electrode lying in a first plane and having an edge; and

a passivation layer adjacent the second electrode, the passivation layer lying in a second plane that is generally parallel to the first plane and having an edge;

wherein the layer of piezoelectric material comprises a trench adjacent the edge of the second electrode; and

fill material in the trench of the layer of piezoelectric material.

23. An acoustic resonator as claimed in claim 22, wherein the second electrode comprises a material that is the same as the fill material in the trench.

24. An acoustic resonator as claimed in claim 22, wherein the fill material is a material selected from the group comprising dielectrics, metals, piezoelectrics, Mo, Pt, Al, Cu, W, Au, Ag, polyimide, benzocyclobutene, SiO₂, Si₃N₄, AlN, ZnO, LiNbO₃, PZT, LiTaO₃, and Al₂O₃.

25. An acoustic resonator comprising:

a substrate;

a first electrode adjacent the substrate;

a piezoelectric layer adjacent the first electrode;

a trench provided in the piezoelectric layer, wherein the trench is configured to reduce energy loss in the acoustic resonator;

a second electrode adjacent the piezoelectric layer, the second electrode lying in a first plane and having an edge; and

a depression disposed in the substrate, wherein the first electrode spans the depression.

26. The acoustic resonator of claim 25 further comprising a passivation layer adjacent the second electrode, the passivation layer lying in a second plane that is generally parallel to the first plane and having an edge.

27. The acoustic resonator of claim 25, wherein the trench in the piezoelectric layer is disposed outside the edge of the second electrode.

28. The acoustic resonator of claim 27, wherein the trench extends around a substantial portion of the perimeter of the second electrode.

29. The acoustic resonator of claim 27, wherein the trench is offset from the edge of second electrode by zero microns to less than 100 microns.

30. The acoustic resonator of claim 25 further comprising fill material disposed in the trench of the piezoelectric layer.

31. The acoustic resonator of claim 30, wherein the second electrode comprises a material that is the same as the fill material in the trench.

32. The acoustic resonator of claim 30, wherein the fill material is a material selected from the group comprising dielectrics, metals, piezoelectrics, Mo, Pt, Al, Cu, W, Au, Ag, polyimide, benzocyclobutene, SiO₂, Si₃N₄, AlN, ZnO, LiNbO₃, PZT, LiTaO₃, and Al₂O₃.

33. The acoustic resonator of claim 25, wherein the trench has a depth in the piezoelectric layer that is on the order of hundreds to thousands of angstroms and a width on the order of fractions of a micron to microns.