System and method for determining maximum operational parameters used in maskless applications

• US 7,791,710 B2
• Filed: 10/13/2006
• Issued: 09/07/2010
• Est. Priority Date: 12/28/2004
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Hoeks, Martinus Hendricus
• Primary Examiner(s): NGUYEN, HUNG
• Application Number:
  US11/546,905
• Publication Number:
  US 20070030472A1
• Time in Patent Office: 1,425 Days
• Field of Search: 355/52, 355/53, 355/55, 355/67, 355/77, 430/5, 430/20, 430/30, 250/292.2, 250/548, 356399-401
• US Class Current: 355/77
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/70508 Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus

Abstract

A lithographic method and apparatus for determining operational parameters of a maskless lithography tool. In an embodiment, an amount of data in a datapath of the maskless lithography system is reduced. A maximum value of at least one operational parameter of the maskless lithography system is determined responsive to the reduced amount of data in the datapath.

Claims

1. A method, comprising:

compressing patterning data, wherein a pattern generator of a maskless lithography system uses the compressed pattern data to control elements of the pattern generator and wherein the maskless lithography system operates according to at least one operation parameter;

determining a characteristic of the compressed pattern data; and

determining a maximum value of the at least one operational parameter based on the determined characteristic.

2. The method of claim 1, wherein the determining comprises:

determining a maximum frequency of an illumination source included in the maskless lithography system responsive to the reduced amount of data in the datapath.

3. The method of claim 1, wherein the determining comprises:

determining a maximum scan speed of a pattern generator included in the maskless lithography system responsive to the reduced amount of data in the datapath.

4. The method of claim 1, wherein the determining comprises:

determining a maximum stage speed of a stage included in the maskless lithography system responsive to the reduced amount of data in the datapath.

5. The method of claim 1, wherein the determining comprises:

determining a maximum frequency of an illumination source, a maximum scan speed of a pattern generator, and a maximum stage speed of a stage included in the maskless lithography system responsive to the reduced amount of data in the datapath.

6. The method of claim 1, wherein the characteristic is a time required to decompress the compressed pattern data.