Non-volatile SRAM cell

• US 7,791,941 B2
• Filed: 10/26/2007
• Issued: 09/07/2010
• Est. Priority Date: 10/26/2007
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Hanafi, Hussein I.
• Primary Examiner(s): Nguyen; Dang T
• Application Number:
  US11/924,801
• Publication Number:
  US 20090109734A1
• Time in Patent Office: 1,047 Days
• Field of Search: 365/185.08, 365/158, 365/171, 365/173, 365/148, 365/63, 365/55, 365/185.05, 365/185.1, 365/185.26, 365/185.18
• US Class Current: 365/185.08
• CPC Class Codes: G11C 11/412 using field-effect transistors only
• CPC Class Codes: G11C 14/0081 and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell

Abstract

Methods, devices and systems for non-volatile static random access memory (SRAM) are provided. One method embodiment for operating an SRAM includes transferring data from a pair of static storage nodes of the SRAM to a pair of non-volatile storage nodes when the SRAM is placed in a standby mode. The method further includes transferring data from the pair of non-volatile storage nodes to the pair of static storage nodes when the SRAM exits the standby mode.

Claims

1. A static random access memory (SRAM), comprising:

a cross coupled pair of inverters, wherein each inverter includes a p-type pull up transistor and an n-type pull down transistor coupled to a first static storage node, wherein gates of each inverter in the pair are coupled to the first static storage node of the other inverter; and

wherein each inverter includes a second non-volatile storage node coupled to the first static storage node, wherein the second storage node comprises a two terminal magnetic tunnel junction (MTJ) device, wherein the MTJ device includes;

a first unpinned ferromagnetic layer coupled to the first storage node such that a polarization of an associated spin value can rotate; and

a second pinned ferromagnetic layer in contact with an anti-ferromagnetic layer coupled to a control line such that a polarization of an associated spin value is fixed in one direction;

wherein the first unpinned ferromagnetic layer and the second pinned ferromagnetic layer are separated by a dielectric.

2. The SRAM of claim 1, wherein the MTJ device can alternate between a first resistance and a second resistance according to spin value states in the first and the second ferromagnetic layers.

3. A method for operating a static random access memory (SRAM), comprising:

transferring data from a pair of static storage nodes of the SRAM to a pair of non-volatile storage nodes when the SRAM is placed in a standby mode;

wherein the pair of non-volatile storage nodes comprise a pair of two terminal magnetic tunnel junction (MTJ) devices, and wherein the MTJ devices include;

a first unpinned ferromagnetic layer coupled to the first storage node such that a polarization of an associated spin value can rotate; and

a second pinned ferromagnetic layer in contact with an anti-ferromagnetic layer coupled to a control line such that a polarization of an associated spin value is fixed in one direction;

wherein the first unpinned ferromagnetic layer and the second pinned ferromagnetic layer are separated by a dielectric; and

transferring data from the pair of non-volatile storage nodes to the pair of static storage nodes when the SRAM exits the standby mode;

wherein transferring data includes changing a potential applied to the pair of non-volatile storage nodes between a first potential and a second potential using a control circuit coupled by a control line to the pair of non-volatile storage nodes.

4. The method of claim 3, wherein the method includes utilizing spin torque transfer magnetization switching for transferring data between the pair of static storage nodes and the pair of non-volatile storage nodes.

5. A method for operating a static random access memory (SRAM), comprising:

applying a first potential to a pair of non-volatile storage nodes coupled to a pair of static storage nodes of the SRAM in order to store data from the pair of static storage nodes to the pair of non-volatile storage nodes;

wherein the pair of non-volatile storages nodes comprise a pair of two terminal magnetic tunnel junction (MTJ) devices, and wherein the MJT devices include;

a first unpinned ferromagnetic layer coupled to the first storage node such that a polarization of an associated spin value can rotate; and

a second pinned ferromagnetic layer in contact with an anti-ferromagnetic layer coupled to a control line such that a polarization of an associated spin value is fixed in one direction;

wherein the first unpinned ferromagnetic layer and the second pinned ferromagnetic layer are separated by a dielectric;

applying a second potential to the pair of non-volatile storage nodes to return data from the pair of non-volatile storage nodes to the pair of static storage nodes; and

applying a third potential to reset the pair of non-volatile storage nodes.

6. The method of claim 5, wherein:

applying the first potential includes applying a ground to the pair of non-volatile storage nodes;

applying the second potential includes applying a power supply potential; and

applying the third potential includes applying a potential which is higher in magnitude than the power supply potential.

7. The method of claim 6, wherein the method includes:

applying the first potential before powering down the SRAM;

applying the second potential before powering up the SRAM; and

applying the third potential after powering up the SRAM.

8. The method of claim 5, wherein the method includes coupling the second potential to the pair of non-volatile storage nodes for reading from and writing to the static storage nodes when the SRAM is powered up.

9. A method for forming a memory, comprising:

cross coupling a pair of inverters to form a static random access memory (SRAM) cell, each inverter including a p-type pull up transistor and an n-type pull down transistor coupled to a static storage node, wherein gates of each inverter in the pair are coupled to the static storage node of the other inverter; and

connecting a pair of non-volatile storage nodes to a pair of static storage nodes by forming the pair of non-volatile storage nodes above a layer in which the static storage nodes of the SRAM are formed to conserve SRAM cell area;

wherein the pair of non-volatile storage nodes comprise a pair of two terminal magnetic tunnel junction (MTJ) devices, and wherein the MTJ devices include;

a first unpinned ferromagnetic layer coupled to the first storage node such that a polarization of an associated spin value can rotate; and

a second pinned ferromagnetic layer in contact with an anti-ferromagnetic layer coupled to a control line such that a polarization of an associated spin value is fixed in one direction;

wherein the first unpinned ferromagnetic layer and the second pinned ferromagnetic layer are separated by a dielectric.

10. The method of claim 9, wherein the method includes connecting a control line to the pair of non-volatile storage nodes.

11. The method of claim 10, wherein connecting the pair of non-volatile storage nodes includes connecting the pair of MTJ devices such that the first ferromagnetic layer in each device is connected to the static storage node and the second ferromagnetic layer in each device is connected to the control line.

12. The method of claim 11, wherein the method includes connecting an anti-ferromagnetic layer between the second ferromagnetic layer and the control line to fix a polarization of an associated spin value of the second ferromagnetic layer in one direction.

13. The method of claim 12, wherein the method includes:

forming a number of SRAM cells in an array wherein each SRAM cell includes a complementary pair of sense lines coupled to a static storage node in each inverter; and

wherein connecting the control line to the pair of non-volatile storage nodes includes connecting the control line to the pair of non-volatile storage nodes in a block of SRAM cells.

14. A method for operating a static random access memory (SRAM), comprising:

transferring data from a pair of static storage nodes of the SRAM to a pair of non-volatile storage nodes when the SRAM is placed in a standby mode by coupling a ground to the pair of non-volatile storage nodes;

wherein the pair of non-volatile storage nodes comprise a pair of two terminal magnetic tunnel junction (MTJ) devices, and wherein the MTJ devices include;

a first unpinned ferromagnetic layer coupled to the first storage node such that a polarization of an associated spin value can rotate; and

a second pinned ferromagnetic layer in contact with an anti-ferromagnetic layer coupled to a control line such that a polarization of an associated spin value is fixed in one direction;

wherein the first unpinned ferromagnetic layer and the second pinned ferromagnetic layer are separated by a dielectric; and

transferring data from the pair of non-volatile storage nodes to the pair of static storage nodes when the SRAM exits the standby mode by coupling a first positive potential to the pair of non-volatile storage nodes.

15. The method of claim 14, wherein the method includes coupling a second positive potential that is higher in magnitude than the first positive potential to at least partially halt transferring data between to the pair of static storage nodes and the pair of non-volatile storage nodes.

16. The method of claim 15, wherein the method includes coupling the first positive potential to the pair of non-volatile storage nodes for reading from and writing to the static storage nodes when the SRAM is powered up.