Semiconductor device and method for boosting word line
First Claim
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1. A method of operating a memory device, said method comprising:
- charging a word line to a power supply voltage level;
boosting said word line to a higher voltage level than said power supply voltage level; and
preventing discharge of said word line below said higher voltage level.
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Abstract
A semiconductor device of the present invention includes a booster circuit that boosts a selected word line (WL) to a given voltage higher than a power supply voltage and a charge pump circuit that retains the boosted word line (WL) at the first given voltage. When the booster circuit boosts the word line, the voltage level is degraded as the time goes. However, it is possible to program the memory cell and read out thereof properly by retaining the voltage of the word line with the charge pump circuit.
12 Citations
20 Claims
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1. A method of operating a memory device, said method comprising:
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charging a word line to a power supply voltage level; boosting said word line to a higher voltage level than said power supply voltage level; and preventing discharge of said word line below said higher voltage level. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of operating a memory device, said method comprising:
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in response to change in an address signal, boosting a voltage level of a word line from a power supply voltage value to a higher voltage value; and preventing discharge of said word line below said higher voltage value. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method of operating a memory device, said method comprising:
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initiating a memory operation; in response to initiation of said memory operation, boosting a voltage level of a word line from a power supply voltage value to a higher voltage value; and preventing discharge of said higher voltage value of said word line. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification