Semiconductor device and semiconductor signal processing apparatus

• US 7,791,962 B2
• Filed: 06/16/2008
• Issued: 09/07/2010
• Est. Priority Date: 06/09/2004
• Status: Expired due to Fees

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Noda, Hideyuki, Saitoh, Kazunori, Ariomoto, Kazutami, Dosaka, Katsumi
• Primary Examiner(s): Luu; Pho M
• Application Number:
  US12/213,131
• Publication Number:
  US 20090027978A1
• Time in Patent Office: 813 Days
• Field of Search: 365/230.05, 365/189.17, 365/189.02
• US Class Current: 365/189.17
• CPC Class Codes: G11C 7/1006 Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor

Abstract

A memory cell mat is divided into a plurality of entries, and an arithmetic logic unit is arranged corresponding to each entry. Between the entries and the corresponding arithmetic logic units, arithmetic/logic operation is executed in bit-serial and entry-parallel manner. Where parallel operation is not very effective, data is transferred in entry-serial and bit-parallel manner to a group of processors provided at a lower portion of the memory mat. In this manner, a large amount of data can be processed at high speed regardless of the contents of operation or data bit width.

Claims

1. A semiconductor signal processing device, comprising:

a plurality of basic operation blocks each including a memory cell mat having a plurality of memory cells arranged in rows and columns and divided into a plurality of entries each having bits of a same word, and processors arranged corresponding to the entries and capable of executing operational processing independently of each other;

an internal data bus arranged commonly to the basic operation blocks;

a large capacity memory coupled to said internal data bus and capable of data transfer to and from each of the basic operation blocks and including memory cells arranged in rows and columns; and

a control circuit for performing data transfer, on the basis of data of one row of said large capacity memory, between said large capacity memory and a selected basic operation block.

2. The semiconductor signal processing device according to claim 1, wherein

said large capacity memory includes a plurality of banks accessible independently of each other, each said bank having the same structure as said memory mat.

3. A semiconductor signal processing device, comprising:

a plurality of operation blocks each including a memory cell mat having a plurality of memory cells arranged in rows and columns and divided into a plurality of entries and processing circuits arranged corresponding to the entries;

a neighboring block connecting bus for selectively coupling processing circuits at corresponding positions of neighboring operation blocks; and

a bit transfer circuit in each operation block for selectively coupling processing circuits.

4. The semiconductor signal processing device according to claim 3, wherein

said bit transfer circuit includes

a first bus line arranged corresponding to a neighboring processing circuit,

a second bus line arranged for a processing circuit at a position apart by a prescribed number, and

a switch circuit arranged corresponding to the first and second bus lines, for connecting, when rendered conductive, a corresponding bus line to an associated processing circuit.

5. The semiconductor signal processing device according to claim 4, wherein

said switch circuit includes a programmable switch circuit having a connection manner switchable to any of a through state, a state allowing data transfer between a corresponding bus line and a corresponding processing circuit, and a dummy state inhibiting data transfer over the corresponding bus line.

6. The semiconductor signal processing device according to claim 4, further including a connection control circuit for setting the connection manner of said plurality of switch circuits individually for each of said operation blocks.

7. A semiconductor signal processing device, comprising:

a plurality of operation circuit blocks each including a memory cell mat having a plurality of memory cells arranged in rows and columns and divided into a plurality of entries, and a plurality of processing circuits arranged corresponding to the entries of the memory cell mat;

a global data bus arranged common to said plurality of operation circuit blocks;

a system data bus coupled to an external processing device;

an orthogonal transformation circuit connected between said system data bus and a first internal transfer bus, changing configuration of data transferred over each of said system bus and said first internal transfer bus;

a cross bar switch connected between said first internal transfer bus and a second internal transfer bus, for changing a connection path between the first and second internal transfer buses; and

a selecting circuit connected between said second internal transfer bus and said global data bus, for selectively connecting said second internal transfer bus and bus lines of said global data bus.

8. The semiconductor signal processing device according to claim 7, wherein

said cross bar switch includes

a decode circuit for decoding connection information from a selected operation circuit block, and

a switch matrix for establishing a connection path between the first and second internal transfer buses in accordance with an output signal from said decode circuit.