Mask-patterns including intentional breaks

• US 7,793,253 B2
• Filed: 10/04/2006
• Issued: 09/07/2010
• Est. Priority Date: 10/04/2005
• Status: Active Grant

• Current Assignee: Synopsys Incorporated
• Original Assignee: Luminescent Technologies, Inc. (KLA Corporation)
• Inventors: Liu, Yong, Rissman, Paul, Abrams, Daniel S., Peng, Danping
• Primary Examiner(s): Chiang; Jack
• Assistant Examiner(s): Tat; Binh C
• Application Number:
  US11/538,782
• Publication Number:
  US 20070196742A1
• Time in Patent Office: 1,434 Days
• Field of Search: 716 19- 21, 430/5, 430/22, 430/30
• US Class Current: 716/53
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Abstract

A method for determining a mask pattern to be used on a photo-mask in a photolithographic process is described. During the method, a target pattern that includes at least one continuous feature is provided. Then a mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask is determined. Note that the mask pattern includes at least two separate features corresponding to at least the one continuous feature. Furthermore, at least the two separate features are separated by a spacing having a length and the spacing overlaps at least a portion of at least the one continuous feature.

Claims

1. A computer-implemented method for determining a mask pattern to be used on a photo-mask in a photolithographic process, wherein the photo-mask has a plurality of distinct types of regions having distinct optical properties, comprising:

providing a target pattern, wherein the target pattern includes at least one continuous feature having two portions that intersect each other, the two portions having, respectively, a first symmetry axis and a second symmetry axis; and

determining, using at least one processor in the computer, the mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask, wherein the mask pattern includes a first feature and a second feature corresponding to at least the one continuous feature, the first feature having a third symmetry axis which is substantially parallel to the first symmetry axis, the second feature having a fourth symmetry axis which is substantially parallel to the second symmetry axis, wherein the first feature and the second feature are separated by a gap having a length which overlaps at least one of the two portions of at least the one continuous feature proximate to the intersection of the two portions, and wherein the first feature and the second feature substantially overlap at least the one continuous feature, wherein the determining includes calculating a gradient of a function, wherein the function depends on an initial mask pattern and the estimate of a wafer pattern to be printed using the photo-mask in the photo-lithographic process, and wherein the gradient is calculated in accordance with a formula obtained by taking a derivative of the function.

2. The computer-implemented method of claim 1, wherein the gap has a fifth symmetry axis that is approximately perpendicular to the second symmetry axis.

3. The computer-implemented method of claim 1, wherein the first symmetry axis is approximately perpendicular to the second symmetry axis.

4. The computer-implemented method of claim 1, wherein the length is a function of a width of at least at one of the portions of the one continuous feature.

5. The computer-implemented method of claim 1, wherein the first feature and the second feature are separated by a topological change in the mask pattern.

6. The computer-implemented method of claim 1, wherein the determining includes an optical proximity correction.

7. The computer-implemented method of claim 1, wherein the estimated wafer pattern is determined using a model of the photo-lithographic process.

8. The computer-implemented method of claim 7, wherein the model of the photo-lithographic process includes a photo-resist model.

9. The computer-implemented method of claim 1, wherein at least the one continuous feature includes a line, an intersection of two or more lines, or a contact.

10. The computer-implemented method of claim 1, wherein the target pattern corresponds to at least a portion of an integrated circuit.

11. The computer-implemented method of claim 1, wherein at least one of the first feature and the second feature includes one or more partial indentations, and wherein a respective partial indentation of the one or more partial indentations has a pre-determined width.

12. The computer-implemented method of claim 1, wherein at least one of the first feature and the second feature includes one or more bumps, and wherein a respective bump of the one or more bumps has a pre-determined width.

13. The computer-implemented method of claim 1, wherein the target pattern and the mask pattern include bitmap images.

14. The computer-implemented method of claim 1, wherein the target pattern and the mask pattern include grayscale images.

15. The computer-implemented method of claim 14, wherein the determining is performed at sub-pixel resolution.

16. The computer-implemented method of claim 1, wherein the determining is performed over a range of process conditions in the photo-lithographic process.

17. A computer-program product for use in conjunction with a computer system, the computer-program product comprising a computer-readable storage medium and a computer-program mechanism embedded therein for determining a mask pattern to be used on a photo-mask in a photolithographic process, wherein the photo-mask has a plurality of distinct types of regions having distinct optical properties, the computer-program mechanism including:

instructions for providing a target pattern, wherein the target pattern includes at least one continuous feature having two portions that intersect each other, the two portions having, respectively, a first symmetry axis and a second symmetry axis; and

instructions for determining the mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask, wherein the mask pattern includes a first feature and a second feature corresponding to at least the one continuous feature, the first feature having a third symmetry axis which is substantially parallel to the first symmetry axis, the second feature having a fourth symmetry axis which is substantially parallel to the second symmetry axis, wherein the first feature and the second feature are separated by a gap having a length which overlaps at least one of the two portions of at least the one continuous feature proximate to the intersection of the two portions, and wherein the first feature and the second feature substantially overlap at least the one continuous feature, wherein the determining includes calculating a gradient of a function, wherein the function depends on an initial mask pattern and the estimate of a wafer pattern to be printed using the photo-mask in the photo-lithographic process, and wherein the gradient is calculated in accordance with a formula obtained by taking a derivative of the function.

18. A computer system, comprising:

at least one processor;

at least one memory; and

at least one program module, the program module stored in the memory and configured to be executed by the processor, wherein at least the program module is for determining a mask pattern to be used on a photo-mask in a photolithographic process, wherein the photo-mask has a plurality of distinct types of regions having distinct optical properties, at least the program module including;

instructions for providing a target pattern, wherein the target pattern includes at least one continuous feature having two portions that intersect each other, the two portions having, respectively, a first symmetry axis and a second symmetry axis; and

instructions for determining the mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask, wherein the mask pattern includes a first feature and a second feature corresponding to at least the one continuous feature, the first feature having a third symmetry axis which is substantially parallel to the first symmetry axis, the second feature having a fourth symmetry axis which is substantially parallel to the second symmetry axis, wherein the first feature and the second feature are separated by a gap having a length which overlaps at least one of the two portions of at least the one continuous feature proximate to the intersection of the two portions, and wherein the first feature and the second feature substantially overlap at least the one continuous feature, wherein the determining includes calculating a gradient of a function, wherein the function depends on an initial mask pattern and the estimate of a wafer pattern to be printed using the photo-mask in the photo-lithographic process, and wherein the gradient is calculated in accordance with a formula obtained by taking a derivative of the function.

19. A computer system, comprising:

means for computing;

means for storing; and

at least one program module mechanism, the program module mechanism stored in at least the means for storing and configured to be executed by at least the means for computing, wherein at least the program module mechanism is for determining a mask pattern to be used on a photo-mask in a photolithographic process, wherein the photo-mask has a plurality of distinct types of regions having distinct optical properties, at least the program module mechanism including;

instructions for providing a target pattern, wherein the target pattern includes at least one continuous feature having two portions that intersect each other, the two portions having, respectively, a first symmetry axis and a second symmetry axis; and

instructions for determining the mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask, wherein the mask pattern includes a first feature and a second feature corresponding to at least the one continuous feature, the first feature having a third symmetry axis which is substantially parallel to the first symmetry axis, the second feature having a fourth symmetry axis which is substantially parallel to the second symmetry axis, wherein the first feature and the second feature are separated by a gap having a length which overlaps at least one of the two portions of at least the one continuous feature proximate to the intersection of the two portions, and wherein the first feature and the second feature substantially overlap at least the one continuous feature, wherein the determining includes calculating a gradient of a function, wherein the function depends on an initial mask pattern and the estimate of a wafer pattern to be printed using the photo-mask in the photo-lithographic process, and wherein the gradient is calculated in accordance with a formula obtained by taking a derivative of the function.

20. A computer-implemented method for determining a write pattern to be used by a write device in a semiconductor-manufacturing process, comprising:

providing a target pattern, wherein the target pattern includes at least one continuous feature having two portions that intersect each other, the two portions having, respectively, a first symmetry axis and a second symmetry axis; and

determining, using at least one processor in the computer, the write pattern, wherein the write pattern includes instructions for a first feature and a second feature corresponding to at least the one continuous feature, the first feature having a third symmetry axis which is substantially parallel to the first symmetry axis, the second feature having a fourth symmetry axis which is substantially parallel to the second symmetry axis, wherein the first feature and the second feature are separated by a gap having a length which overlaps at least one of the two portions of at least the one continuous feature proximate to the intersection of the two portions, and wherein the first feature and the second feature substantially overlap at least the one continuous feature, wherein the determining includes calculating a gradient of a function, wherein the function depends on an initial write pattern and the estimate of a wafer pattern to be reading in the photo-lithographic process, and wherein the gradient is calculated in accordance with a formula obtained by taking a derivative of the function.

21. A photo-mask for use in a photolithographic process, wherein the photo-mask has a plurality of distinct types of regions having distinct optical properties, and wherein a mask pattern to which the photo-mask corresponds is determined in a process including the operations of:

providing a target pattern, wherein the target pattern includes at least one continuous feature having two portions that intersect each other, the two portions having, respectively, a first symmetry axis and a second symmetry axis; and

determining the mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask, wherein the mask pattern includes a first feature and a second feature corresponding to at least the one continuous feature, the first feature having a third symmetry axis which is substantially parallel to the first symmetry axis, the second feature having a fourth symmetry axis which is substantially parallel to the second symmetry axis, wherein the first feature and the second feature are separated by a gap having a length which overlaps at least one of the two portions of at least the one continuous feature proximate to the intersection of the two portions, and wherein the first feature and the second feature substantially overlap at least the one continuous feature, wherein the determining includes calculating a gradient of a function, wherein the function depends on an initial mask pattern and the estimate of a wafer pattern to be printed using the photo-mask in the photo-lithographic process, and wherein the gradient is calculated in accordance with a formula obtained by taking a derivative of the function.

22. A semiconductor wafer, wherein the semiconductor wafer is produced in a photo-lithographic process that includes a photo-mask, wherein the photo-mask has a plurality of distinct types of regions having distinct optical properties, and wherein a mask pattern to which the photo-mask corresponds is determined in a process including the operations of:

providing a target pattern, wherein the target pattern includes at least one continuous feature having two portions that intersect each other, the two portions having, respectively, a first symmetry axis and a second symmetry axis; and

determining the mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask, wherein the mask pattern includes a first feature and a second feature corresponding to at least the one continuous feature, the first feature having a third symmetry axis which is substantially parallel to the first symmetry axis, the second feature having a fourth symmetry axis which is substantially parallel to the second symmetry axis, wherein the first feature and the second feature are separated by a gap having a length which overlaps at least one of the two portions of at least the one continuous feature proximate to the intersection of the two portions, and wherein the first feature and the second feature substantially overlap at least the one continuous feature, wherein the determining includes calculating a gradient of a function, wherein the function depends on an initial mask pattern and the estimate of a wafer pattern to be printed using the photo-mask in the photo-lithographic process, and wherein the gradient is calculated in accordance with a formula obtained by taking a derivative of the function.

23. A semiconductor wafer, wherein the semiconductor wafer is produced in a semiconductor-manufacturing process that includes a write device using a write pattern, wherein the write pattern is determined in a process including the operations of:

providing a target pattern, wherein the target pattern includes at least one continuous feature having two portions that intersect each other, the two portions having, respectively, a first symmetry axis and a second symmetry axis; and

determining the write pattern, wherein the write pattern includes instructions for a first feature and a second feature corresponding to at least the one continuous feature, the first feature having a third symmetry axis which is substantially parallel to the first symmetry axis, the second feature having a fourth symmetry axis which is substantially parallel to the second symmetry axis, wherein the first feature and the second feature are separated by a gap having a length which overlaps at least one of the two portions of at least the one continuous feature proximate to the intersection of the two portions, and wherein the first feature and the second feature substantially overlap at least the one continuous feature, wherein the determining includes calculating a gradient of a function, wherein the function depends on an initial mask pattern and the estimate of a wafer pattern to be printed using the photo-mask in the photo-lithographic process, and wherein the gradient is calculated in accordance with a formula obtained by taking a derivative of the function.