Semiconductor device, manufacturing method and apparatus for the same
First Claim
1. A method for manufacturing a semiconductor device comprising at least a solder bump of alloy solder formed on a wiring layer via an under-bump layer including first metal, comprising the steps of:
- fusing alloy solder having second metal different from main component metal of the solder bump added thereto; and
cooling the fused alloy solder to deposit an intermetallic compound including the second metal and the main component metal of the alloy solder at an interface between the under-bump layer and the solder bump.
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Accused Products
Abstract
A highly reliable semiconductor chip electrode structure allowing control of interface reaction of bonding sections even in the case of using two- or three-element solder used conventionally is disclosed. A solder alloy making layer for preventing dissolving and diffusion of tin into tin-based lead free solder is thinly formed on a UBM layer. The tin-based solder is supplied in solder paste or solder ball form. A combined solder alloy layer composed of a combination of intermetallic compounds, one of tin and the solder alloy making layer, and one of tin and the UBM layer, is formed by heating and melting.
45 Citations
16 Claims
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1. A method for manufacturing a semiconductor device comprising at least a solder bump of alloy solder formed on a wiring layer via an under-bump layer including first metal, comprising the steps of:
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fusing alloy solder having second metal different from main component metal of the solder bump added thereto; and cooling the fused alloy solder to deposit an intermetallic compound including the second metal and the main component metal of the alloy solder at an interface between the under-bump layer and the solder bump. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification