Multi-station deposition apparatus and method

• US 7,794,789 B2
• Filed: 05/05/2009
• Issued: 09/14/2010
• Est. Priority Date: 04/16/2002
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Chang, Mei, Lei, Lawrence C., Glenn, Walter B.
• Primary Examiner(s): Culbert; Roberts
• Application Number:
  US12/435,950
• Publication Number:
  US 20090214786A1
• Time in Patent Office: 497 Days
• Field of Search: 427/255.5, 427/251, 427/248.1
• US Class Current: 427/255.5
• CPC Class Codes: C23C 16/45512 Premixing before introduction in the reaction chamber
• CPC Class Codes: C23C 16/45519 Inert gas curtains
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/4586 Elements in the interior of the support, e.g. electrodes, heating or cooling devices
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/67167 surrounding a central transfer chamber
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers

Abstract

A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.

Claims

1. A method of depositing a material on a wafer comprising:

positioning a first wafer in a first deposition position within a vacuum deposition chamber;

introducing a first deposition gas proximate the first wafer, the first deposition gas provided by flowing the first deposition gas in a first direction;

flowing a separation gas in a second direction that is different than the first direction between the first deposition position and a second deposition position within the vacuum deposition chamber;

moving the first wafer to the second deposition; and

introducing a second deposition gas proximate the first wafer.

2. The method of claim 1, wherein the separation gas is provided between the second deposition position and a third deposition position defined within the vacuum deposition chamber.

3. The method of claim 1, wherein flowing the separation gas further comprises:

flowing the separation gas in an orientation that remains stationary relative to the first wafer as the first wafer moves from the first deposition position to the second deposition position.

4. The method of claim 1, wherein moving the first wafer from the first deposition position to the second deposition position further comprises:

rotating the first wafer relative a centerline of the vacuum deposition chamber.

5. The method of claim 1, wherein moving the first wafer from the first deposition position to the second deposition position further comprises:

rotating a platen comprising a plurality of wafer supports about its central axis, wherein the first wafer is disposed on one of the wafer supports.

6. The method of claim 1 further comprising:

positioning a second wafer in the first deposition position after the first wafer is moved to the second deposition position.

7. The method of claim 1, wherein, at each deposition position, supplying a continuous flow of purge gas having a reactant gas intermittently inserted into the continuous flow of purge gas as a burst of reactant gas.

8. The method of claim 7, wherein the reactant gas used at the first deposition position is silane and the reactant gas used at the second deposition position is tungsten hexafluoride.

9. The method of claim 1, wherein the first deposition gas and the second deposition gas form a layer through an atomic layer deposition process.

10. The method of claim 1, wherein a chemical vapor deposition process is performed in at least one of the deposition positions.