Method of fabricating self-aligned source and drain contacts in a double gate FET with controlled manufacturing of a thin Si or non-Si channel
First Claim
1. A method of forming a transistor structure on a substrate comprising a supporting Si layer, a buried insulating layer, and a top Si layer, the method comprising:
- forming a gate region of the transistor structure on the top Si layer, wherein the gate region is separated from the top Si layer by a dielectric layer, and wherein the top Si layer is doped;
forming open areas on the top Si layer demarcated by at least one of a demarcating oxide, a resist layer region, and the gate region;
exposing the transistor structure comprising the open areas to ion implantation through the gate region wherein the demarcating layer region and the gate region act as an implantation mask, so as to simultaneously form impurity regions below the open areas in the buried insulating layer and an impurity region below the gate region in the top Si layer, wherein the impurity region below the gate region has a higher impurity level than regions below the open areas in the top Si layer to allow a selective removal of the impurity region below the gate region relative to the regions below the open areas in the top Si layer; and
removing the impurity region in the top Si layer below the gate region by selective etching using the regions below the open areas in the top Si layer as a stopping layer, thereby creating a gap between the regions below the open areas in the top Si layer.
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Abstract
A method of forming a transistor structure on a substrate (SOI) is disclosed, wherein the substrate comprises a supporting Si layer, a buried insulating layer, and a top Si layer. The method comprises forming a gate region of the transistor structure on the top Si layer, wherein the gate region is separated from the top Si layer by a dielectric layer, and wherein the top Si layer comprises a high dopant level. The method further comprises forming an open area on the top Si layer demarcated by a demarcating oxide and/or resist layer region, forming high level impurity or heavily-damaged regions by ion implantation, and exposing the open area to an ion beam, wherein the ion beam comprises a combination of beam energy and dose, and wherein the demarcating layer region and the gate region act as an implantation mask.
34 Citations
22 Claims
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1. A method of forming a transistor structure on a substrate comprising a supporting Si layer, a buried insulating layer, and a top Si layer, the method comprising:
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forming a gate region of the transistor structure on the top Si layer, wherein the gate region is separated from the top Si layer by a dielectric layer, and wherein the top Si layer is doped; forming open areas on the top Si layer demarcated by at least one of a demarcating oxide, a resist layer region, and the gate region; exposing the transistor structure comprising the open areas to ion implantation through the gate region wherein the demarcating layer region and the gate region act as an implantation mask, so as to simultaneously form impurity regions below the open areas in the buried insulating layer and an impurity region below the gate region in the top Si layer, wherein the impurity region below the gate region has a higher impurity level than regions below the open areas in the top Si layer to allow a selective removal of the impurity region below the gate region relative to the regions below the open areas in the top Si layer; and removing the impurity region in the top Si layer below the gate region by selective etching using the regions below the open areas in the top Si layer as a stopping layer, thereby creating a gap between the regions below the open areas in the top Si layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of forming a transistor structure on a substrate comprising a supporting Si layer, a buried insulating layer, and a top Si layer, the method comprising:
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forming an emitter region of the transistor structure on the top Si layer, wherein the emitter region is separated from the top Si layer by a base layer, and wherein the top Si layer is doped; forming open areas on the top Si layer demarcated by at least one of a demarcating oxide, a resist layer region, and the emitter region; exposing the transistor structure comprising the open areas to ion implantation through the emitter region wherein the demarcating layer region and the emitter region act as an implantation mask so as to simultaneously form impurity regions below the open areas in the buried insulating layer and an impurity region below the emitter region in the top Si layer, wherein the impurity region below the emitter region has a higher impurity level than regions below the open areas in the top Si layer to allow a selective removal of the impurity region below the emitter region relative to the regions below the open areas in the top Si layer; and removing the impurity region in the top Si layer below the emitter region by selective etching using the regions below the open areas in the top Si layer as stopping layer, thereby creating a gap between the regions below the open areas in the top Si layer. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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Specification