Conductive interconnect structures and formation methods using supercritical fluids

• US 7,795,134 B2
• Filed: 06/28/2005
• Issued: 09/14/2010
• Est. Priority Date: 06/28/2005
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Sulfridge, Marc
• Primary Examiner(s): Sarkar; Asok K
• Assistant Examiner(s): Slutsker; Julia
• Application Number:
  US11/169,838
• Publication Number:
  US 20060289968A1
• Time in Patent Office: 1,904 Days
• Field of Search: 438/637, 438/618, 257/621, 257/E21.464, 257/E23.145
• US Class Current: 438/637
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05 of an individual bonding area
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 27/14601 Structural or functional details thereof
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 2924/014 Solder alloys

Abstract

Conductive interconnect structures and formation methods using supercritical fluids are disclosed. A method in accordance with one embodiment of the invention includes forming a via in a substrate, with the via having a width and a length generally transverse to the width, and with a length being approximately 100 microns or more. The method can further include disposing a conductive material in the via while the via is exposed to a supercritical fluid. For example, copper can be disposed in the via by introducing a copper-containing precursor into the supercritical fluid and precipitating the copper from the supercritical fluid. Interconnect structures can be formed using this technique in a single generally continuous process, and can produce conductive structures having a generally uniform grain structure across the width of the via.

Claims

1. A method for processing a substrate, comprising:

forming a via in a substrate having a first surface and a second surface opposite the first surface, the substrate including a bond site at least proximate to the first surface, the via having an opening proximate to the bond site of the substrate, the opening having a width, a bottom portion in the substrate, and a sidewall with a length generally transverse to the width, the length being approximately 100 microns or more;

contacting the sidewall of the via with a precursor of a conductive material in a supercritical fluid;

precipitating the conductive material from the precursor in the supercritical fluid onto the sidewall of the via;

maintaining a generally uniform concentration of the precursor in the supercritical fluid throughout the via as the conductive material is precipitated from the precursor;

forming a conformal layer of the conductive material on the sidewall of the via from the precipitated conductive material while the via is exposed to the supercritical fluid, the layer of the conductive material having a generally uniform thickness over substantially the entire length of the via in a direction transverse to the width of the via;

after forming the conformal layer, forming a vent hole in the substrate extending from the bottom portion of the via to the second surface of the substrate;

filling the via with a fill material adjacent to the conformal layer of the conductive material after forming the vent hole, the fill material having a first end proximate to the first surface;

exposing a second end of the fill material opposite the first end by removing material from the second surface of the substrate; and

attaching a solder ball to the exposed second end of the fill material, the solder ball being in electrical communication with the bond site of the substrate via the fill material in the via.

2. The method of claim 1 wherein precipitating the conductive material includes performing a reduction reaction in the supercritical fluid.

3. The method of claim 1 wherein precipitating the conductive material includes combining a metal-containing precursor with a supercritical carbon dioxide solvent.

4. The method of claim 1 wherein precipitating the conductive material includes combining a metal-containing precursor with a supercritical non-polar solvent.

5. The method of claim 1 wherein precipitating the conductive material includes disposing a first conductive material on the sidewall of the via, and wherein the method further comprises disposing a second conductive material in the via adjacent to the first conductive material.

6. The method of claim 1 wherein precipitating the conductive material includes disposing a conductive material while the via is exposed to supercritical carbon dioxide.

7. The method of claim 1 wherein precipitating the conductive material includes disposing a seed layer along the sidewall of the via.

8. The method of claim 1 wherein precipitating the conductive material includes:

exposing the via to the supercritical fluid;

introducing the precursor of the conductive material into the supercritical fluid;

reducing the precursor of the conductive material by introducing an additional chemical specie, or elevating a temperature of the supercritical fluid, or both; and

causing the conductive material to precipitate from the supercritical fluid.

9. The method of claim 1, further comprising removing an organic material from a surface of the sidewall of the via with the supercritical fluid before precipitating the conductive material in the via.

10. The method of claim 1, further comprising removing a photoresist material from a surface of the sidewall of the via with the supercritical fluid before precipitating the conductive material in the via.

11. The method of claim 1 wherein precipitating the conductive material includes disposing the conductive material in a generally continuous process.

12. The method of claim 1 wherein precipitating the conductive material includes disposing the conductive material in a generally continuous process without disposing a seed layer in the via.

13. The method of claim 1 wherein precipitating the conductive material includes disposing the conductive material while the conductive material has a generally uniform concentration gradient in the supercritical fluid along a length of the via.

14. The method of claim 1 wherein the substrate has a first surface and a second surface facing away from the first surface, and wherein forming the via includes forming the via to extend through the substrate from the first surface to the second surface.

15. The method of claim 1 wherein precipitating the conductive material includes forming at least a portion of a through-wafer interconnect.

16. The method of claim 1 wherein precipitating the conductive material includes forming at least a portion of a through-wafer interconnect, and wherein the method further comprises:

electrically coupling a first conductive structure of the through-wafer interconnect to a feature within the substrate; and

electrically coupling a second conductive structure of the through-wafer interconnect to a feature external to the substrate.

17. The method of claim 1 wherein precipitating the conductive material includes disposing at least one of copper and a copper compound.

18. The method of claim 1 wherein precipitating the conductive material includes disposing a generally homogeneous conductive material.

19. The method of claim 1 wherein precipitating the conductive material includes disposing the conductive material to have a generally uniform grain structure.

20. The method of claim 1 wherein precipitating the conductive material includes a portion of a process for forming a through-wafer interconnect, and wherein forming the through-wafer interconnect includes forming the through-wafer interconnect without solder.

21. A method for processing a substrate, comprising:

forming a via in a substrate having a first surface and a second surface opposite the first surface, the substrate having a bond site proximate to the first surface, the via having an opening with a width, a bottom portion in the substrate, and a sidewall with a length generally transverse to the width, the length being approximately 100 microns or more; and

exposing the sidewall of the via to supercritical carbon dioxide;

introducing a conductive material precursor into the supercritical carbon dioxide;

reducing the conductive material precursor by introducing an additional chemical specie, or elevating a temperature of the supercritical carbon dioxide, or both;

causing the conductive material to precipitate from the supercritical carbon dioxide to form a conformal layer of the conductive material on the sidewall of the via; and

maintaining a generally uniform concentration of the precursor in the supercritical fluid through out the via as the conductive material is precipitated from the precursor;

after forming the conformal layer, forming a vent hole in the substrate extending from the bottom portion of the via to the second surface of the substrate;

filling the via with a fill material adjacent to the conformal layer of the conductive material after forming the vent hole, the fill material having a first end proximate to the first surface;

exposing a second end of the fill material opposite the first end by removing material from the second surface of the substrate; and

attaching a solder ball to the exposed second end of the fill material, the solder ball being in electrical communication with the bond site of the substrate via the fill material in the via.

22. The method of claim 21 wherein introducing a conductive material precursor includes introducing a precursor containing at least one of nickel and copper.

23. The method of claim 21 wherein introducing a conductive material precursor includes introducing Cu(tmhd)₂.

24. The method of claim 21 wherein reducing the conductive material includes reducing the conductive material with hydrogen.

25. The method of claim 21 wherein causing the conductive material to precipitate includes (a) causing the conductive material to precipitate on the sidewall of the via, and (b) continuing to cause the conductive material to precipitate until the via is at least approximately filled.

26. The method of claim 21, further comprising filling the via with a conductive material having a homogeneous composition and structure.

27. The method of claim 21 wherein exposing the via to supercritical carbon dioxide includes exposing the via to supercritical carbon dioxide having a homogeneous composition, and wherein introducing a conductive material precursor includes introducing the precursor so that the conductive material has a homogeneous concentration distribution in the supercritical carbon dioxide.

28. The method of claim 21 wherein reducing the conductive material precursor includes reducing the conductive material precursor at a temperature of from about 60 degrees C. to about 250 degrees C.

29. A method for processing a substrate, comprising:

forming a via in a substrate having a first surface and a second surface opposite the first surface, the substrate including a bond site proximate to the first surface, the via having an opening with a width, a bottom portion in the substrate, and a sidewall with a length generally transverse to the width;

disposing an organic material on a surface of the substrate and on a sidewall of the via;

contacting the sidewall of the via with a precursor of a conductive material in a supercritical fluid;

precipitating the conductive material from the precursor in the supercritical fluid onto the sidewall of the via while the supercritical fluid removes at least a portion of the organic material;

maintaining a generally uniform concentration of the precursor in the supercritical fluid through out the via as the conductive material is precipitated from the precursor; and

forming a conformal layer of the conductive material on the sidewall of the via from the precipitated conductive material while the via is exposed to the supercritical fluid, the layer of the conductive material having a generally uniform thickness over substantially the entire length of the via in a direction transverse to the width of the via;

after forming the conformal layer, forming a vent hole in the substrate extending from the bottom portion of the via to the second surface of the substrate;

filling the via with a fill material adjacent to the conformal layer of the conductive material, after forming the vent hole, the fill material having a first end proximate to the first surface;

exposing a second end of the fill material opposite the first end by removing material from the second surface of the substrate; and

attaching a solder ball to the exposed second end of the fill material, the solder ball being in electrical communication with the bond site of the substrate via the fill material in the via.

30. The method of claim 29 wherein forming a conformal layer of the conductive material includes introducing the precursor having a conductive constituent into the supercritical fluid, while the via is exposed to the supercritical fluid.

31. The method of claim 29 wherein forming a conformal layer of the conductive material includes:

introducing the precursor into the supercritical fluid;

reducing the precursor by introducing an additional chemical specie, or elevating a temperature of the supercritical fluid, or both; and

causing the conductive material to precipitate from the supercritical fluid and occupy space in the via.

32. The method of claim 29 wherein disposing an organic material includes disposing a photoresist material.

33. The method of claim 29 wherein forming a via includes forming a via having a width and a length generally transverse to the width, the length being approximately 100 microns or more.

34. A method for processing a substrate, comprising:

forming a via in a substrate having a first surface and a second surface opposite the first surface, the via having an opening proximate to the first surface of the substrate, the opening having a width, a bottom portion in the substrate, and a sidewall with generally transverse to the width;

contacting the sidewall of the via with a precursor of a conductive material in a supercritical fluid;

precipitating the conductive material from the precursor in the supercritical fluid onto the sidewall of the via, thereby forming a conformal layer of the conductive material on the sidewall of the via;

after forming the conformal layer, forming a vent hole in the substrate extending from the bottom portion of the via to the second surface of the substrate; and

filling the via with a fill material adjacent to the conformal layer of the conductive material after forming the vent hole.

35. The method of claim 34 wherein precipitating the conductive material includes performing a reduction reaction in the supercritical fluid.

36. The method of claim 34 wherein precipitating the conductive material includes combining a metal-containing precursor with a supercritical carbon dioxide solvent.

37. The method of claim 34 wherein precipitating the conductive material includes combining a metal-containing precursor with a supercritical non-polar solvent.

38. The method of claim 34 wherein precipitating the conductive material includes disposing the conductive material while the via is exposed to supercritical carbon dioxide.

39. The method of claim 34 wherein precipitating the conductive material includes disposing a seed layer along the sidewall of the via.

40. The method of claim 34, further comprising:

removing material from the second surface of the substrate;

exposing an end of the fill material; and

attaching a solder ball to the exposed end of the fill material.