ALD of metal silicate films
First Claim
1. An atomic layer deposition (ALD) method for forming a metal silicate film, the method comprising alternately contacting a substrate in a reaction space with vapor phase pulses of an alkyl amide metal compound comprising hafnium or zirconium, a silicon halide compound and an oxidizing agent, wherein the metal in the metal silicate film consists of hafnium or hafnium and zirconium.
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Accused Products
Abstract
Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and/or trenches).
315 Citations
31 Claims
- 1. An atomic layer deposition (ALD) method for forming a metal silicate film, the method comprising alternately contacting a substrate in a reaction space with vapor phase pulses of an alkyl amide metal compound comprising hafnium or zirconium, a silicon halide compound and an oxidizing agent, wherein the metal in the metal silicate film consists of hafnium or hafnium and zirconium.
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18. An atomic layer deposition (ALD) process for forming a metal silicate film on a substrate in a reaction space, wherein the metal in the metal silicate film consists of hafnium or hafnium and zirconium, comprising:
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(a) contacting the substrate with a vapor phase pulse of an alkyl amide metal comprising hafnium; (b) removing excess alkyl amide metal compound and reaction by-products from the reaction space; (c) contacting the substrate with a vapor phase pulse of a first oxidizing agent; (d) removing excess first oxidizing agent and reaction by-products from the reaction space; (e) contacting the substrate with a vapor phase pulse of a silicon halide compound; (f) removing excess silicon halide compound and reaction by-products from the reaction space; (g) contacting the substrate with a vapor phase pulse of a second oxidizing agent; (h) removing excess second oxidizing agent and reaction by-products from the reaction space; and (i) repeating steps (a) through (h) until the metal silicate film of a desired thickness is formed over the substrate. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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Specification