Phase change material based temperature sensor

• US 7,795,605 B2
• Filed: 06/29/2007
• Issued: 09/14/2010
• Est. Priority Date: 06/29/2007
• Status: Expired due to Fees

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: McMahon, Robert, Habib, Nazmul, Lam, Chung Hon
• Primary Examiner(s): Andújar; Leonardo
• Assistant Examiner(s): KLEIN, JORDAN M
• Application Number:
  US11/771,033
• Publication Number:
  US 20090001336A1
• Time in Patent Office: 1,173 Days
• Field of Search: 257/2, 257/3, 257/4, 257/214, 257/298, 257/467, 257/E29.17, 257/E27.004, 365/148, 374/56, 374/152, 374/163
• US Class Current: 257/2
• CPC Class Codes: G01K 11/06 using melting, freezing, or softening
• CPC Class Codes: G01K 7/16 using resistive elements resistive elements per se H01C, H01L
• CPC Class Codes: H10B 63/30 comprising selection components having three or more electrodes, e.g. transistors
• CPC Class Codes: H10N 70/063 by etching of pre-deposited switching material layers, e.g. lithography
• CPC Class Codes: H10N 70/231 based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
• CPC Class Codes: H10N 70/826 adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
• CPC Class Codes: H10N 70/8825 Selenides, e.g. GeSe
• CPC Class Codes: H10N 70/8828 Tellurides, e.g. GeSbTe
• CPC Class Codes: H10N 70/884 Other compounds of groups 13-15, e.g. elemental or compound semiconductors

Abstract

A block of phase change material located in a semiconductor chip is reset to an amorphous state. The block of phase change material may be connected to an internal resistance measurement circuit that can transmit the measured resistance data to input/output pads either in an analog output format or in a digital output format. Depending on the ambient temperature, the resistance of the block of phase change material changes. By measuring a fractional resistance change compared to the resistance of the phase change material at a calibration temperature, the temperature of the region around the phase change material can be accurately measured. A logic decoder and an input/output circuit may be employed between the internal resistance measurement circuit and the input/output pads. A plurality of temperature sensing circuits containing phase change material blocks may be employed in the semiconductor chip to enable an accurate temperature profiling during chip operation.

Claims

1. A phase change material based temperature sensor circuit comprising:

a metal-oxide-semiconductor field effect transistor (MOSFET) located on a top surface of a semiconductor substrate that is located in a semiconductor chip;

a block of phase change material contacting a surface of a component of said MOSFET and embedded in a dielectric layer located over said semiconductor substrate, wherein said component comprises a semiconductor material;

a first metal contact that is in direct contact with one portion of said block and embedded in said dielectric layer;

a second metal contact that is in direct contact with another portion of said block and embedded in said dielectric layer;

at least two input/output pads on said semiconductor chip; and

a metal wiring embedded in said dielectric layer, directly contacting said first and second metal contacts, connecting said block and said at least two input/output pads to each of said first and second metal contacts, and configured to enable a resistance measurement of said block.

2. The phase change material based temperature sensor circuit of claim 1, wherein said block of phase change material abuts a semiconductor component selected from the group consisting of source and drain regions, an emitter, a collector, a gate, a diode, and a resistor.

3. The phase change material based temperature sensor circuit of claim 1, wherein said component is embedded in said semiconductor substrate.

4. The phase change material based temperature sensor circuit of claim 3, wherein said block of phase change material abuts a drain of a field effect transistor located on said semiconductor substrate.

5. The phase change material based temperature sensor circuit of claim 1, wherein said first metal contact is not in direct contact with said semiconductor substrate, said second metal contact is not in direct contact with of said semiconductor substrate, and said metal wiring does not directly contact said semiconductor substrate.

6. A phase change material based temperature sensor circuit comprising:

a metal-oxide-semiconductor field effect transistor (MOSFET) located on a top surface of a semiconductor substrate that is located in a semiconductor chip;

a block of phase change material contacting a surface of a component of said MOSFET and embedded in a dielectric layer located over said semiconductor substrate, wherein said component comprises a semiconductor material;

a first metal contact that is in direct contact with one portion of said block and embedded in said dielectric layer;

a second metal contact that is in direct contact with another portion of said block and embedded in said dielectric layer;

a metal wiring configured to enable measurement of a resistance of said block by passing current through one portion of said metal wiring, said first metal contact, said block, said second metal contact, and another portion of said metal wiring; and

a sensing circuitry that includes a resistance measurement circuit that is connected to said metal wiring and is configured to measure a resistance of said block by measuring said current, wherein said sensing circuitry determines a local ambient temperature of said block based on said measured resistance during operation of said semiconductor chip.

7. The phase change material based temperature sensor circuit of claim 6, wherein said metal wiring is embedded in said dielectric layer and directly contacts said first and second metal contacts.

8. The phase change material based temperature sensor circuit of claim 7, further comprising a programming transistor connected to said block and said metal wiring, wherein said programming transistor is capable of resetting said block of phase change material to an amorphous state by passing current through said block.

9. The phase change material based temperature sensor circuit of claim 8, further comprising an amorphous state resetting circuit, wherein said amorphous state resetting circuit incorporates said programming transistor and controls current through said block.

10. The phase change material based temperature sensor circuit of claim 9, further comprising a logic decoder and input/output circuit connected to said amorphous state resetting circuit, said resistance measurement circuit, and at least two input/output pads.

11. The phase change material based temperature sensor circuit of claim 9, wherein said phase change material comprises an alloy of a chalcogen element with at least one non-chalcogen element, said chalcogen element is selected from the group consisting of Te, Se, and S, and said at least one non-chalcogen element is selected from the group consisting of Ge, Sb, Bi, Pb, Sn, As, Si, P, Ga, In, and Ag.

12. The phase change material based temperature sensor circuit of claim 9, wherein said block of phase change material abuts a semiconductor component selected from the group consisting of source and drain regions, an emitter, a collector, a gate, a diode, and a resistor.

13. The phase change material based temperature sensor circuit of claim 9, wherein said component is embedded in said semiconductor substrate.

14. The phase change material based temperature sensor circuit of claim 9, further comprising:

at least two input/output pads on said semiconductor chip; and

another metal wiring connecting a logic decoder and input/output circuit and at least two other input/output pads.

15. A phase change material based temperature sensor circuit comprising:

a block of phase change material located in a semiconductor chip including a semiconductor substrate and a dielectric layer located over said semiconductor substrate;

a first metal contact that is in direct contact with one portion of said block;

a second metal contact that is in direct contact with another portion of said block;

at least two input/output pads on said semiconductor chip;

a metal wiring embedded in said dielectric layer, directly contacting said first and second metal contacts connecting said block and said at least two input/output pads to each of said first and second metal contacts, and configured to enable a resistance measurement of said block;

a field effect transistor located on said semiconductor substrate and including a gate dielectric; and

another dielectric layer in direct contact with a top surface of said semiconductor substrate and a bottom surface of said block of phase change material, wherein said another dielectric layer and said gate dielectric have a same composition and thickness.

16. A phase change material based temperature sensor circuit comprising:

a block of phase change material located in a semiconductor chip including a semiconductor substrate and a dielectric layer located over said semiconductor substrate;

a first metal contact that is in direct contact with one portion of said block;

a second metal contact that is in direct contact with another portion of said block;

a metal wiring configured to enable measurement of a resistance of said block;

a sensing circuitry that includes a resistance measurement circuit that is connected to said metal wiring and is configured to measure a resistance of said block by measuring said current, wherein said sensing circuitry determines a local ambient temperature of said block based on said measured resistance during operation of said semiconductor chip;

a field effect transistor located on said semiconductor substrate and including a gate dielectric; and

another dielectric layer in direct contact with a top surface of said semiconductor substrate and a bottom surface of said block of phase change material, wherein said another dielectric layer and said gate dielectric have a same composition and thickness.