Structure with transistor
First Claim
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1. A flexible structure with a transistor comprising:
- a plastic film substrate;
a gas barrier layer made of Al2O3 of 10-52 nm thickness on the plastic film substrate; and
a transistor on the gas barrier layer,wherein the transistor includes an oxide semiconductor layer directly formed on the gas barrier layer,wherein a gate insulator, a source electrode and a drain electrode are formed on the oxide semiconductor layer,wherein a gate electrode is formed on the gate insulator,wherein an oxygen transmission rate of the plastic film substrate with the gas barrier layer is 0.9-3.5 cc/m2/24 hours/1 atm,andwherein a water-vapor transmission rate of the plastic film substrate with the gas barrier layer is 0.5-3g/m2/24 hours.
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Abstract
A structure with a transistor is disclosed comprising a substrate, a gas barrier layer on the substrate, and a transistor on the gas barrier layer. The transistor can include an oxide semiconductor layer. The oxide semiconductor layers can comprise In—Ga—Zn—O. A display, such as a liquid crystal display, can have such a structure.
67 Citations
4 Claims
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1. A flexible structure with a transistor comprising:
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a plastic film substrate; a gas barrier layer made of Al2O3 of 10-52 nm thickness on the plastic film substrate; and a transistor on the gas barrier layer, wherein the transistor includes an oxide semiconductor layer directly formed on the gas barrier layer, wherein a gate insulator, a source electrode and a drain electrode are formed on the oxide semiconductor layer, wherein a gate electrode is formed on the gate insulator, wherein an oxygen transmission rate of the plastic film substrate with the gas barrier layer is 0.9-3.5 cc/m2/24 hours/1 atm, and wherein a water-vapor transmission rate of the plastic film substrate with the gas barrier layer is 0.5-3g/m2/24 hours. - View Dependent Claims (2, 3, 4)
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Specification
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Current AssigneeToppan Printing Co., Ltd. (TOPPAN Holdings, Inc.)
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Original AssigneeToppan Printing Co., Ltd. (TOPPAN Holdings, Inc.)
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InventorsIshizaki, Mamoru, Kon, Masato, Ito, Manabu, Sekine, Norimasa
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Primary Examiner(s)Purvis; Sue
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Assistant Examiner(s)AHMED, SELIM U
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Application NumberUS11/787,554Publication NumberTime in Patent Office1,246 DaysField of Search257/43, 257/40, 257/E29.296US Class Current257/43CPC Class CodesH01L 29/78603 characterised by the insula...H01L 29/7869 having a semiconductor body...
