Thin film transistor panel
First Claim
1. A thin film transistor panel comprising:
- a transparent substrate;
scanning lines which are made of a light blocking electroconductive material, and which are formed on the transparent substrate;
data lines which are formed on the transparent substrate perpendicular to the scanning lines, and which are made of the light blocking electroconductive material;
thin film transistors each including;
(i) a transparent gate electrode, a part of which overlaps one of the scanning lines so as to be electrically connected to the one of the scanning lines, (ii) a transparent drain electrode, a part of which overlaps one of the data lines so as to be electrically connected to the one of the data lines, (iii) a transparent source electrode, and (iv) a transparent metal oxide semiconductor thin film;
transparent pixel electrodes which are formed with a transparent metal oxide as anode electrodes, and which are electrically connected to the source electrode; and
an organic EL layer and a cathode electrode which are formed in a region corresponding to each of the anode electrodes,wherein each of the pixel electrodes covers at least a part of the gate electrode so as to avoid a region where the gate electrode overlaps the one of the scanning lines, and the pixel electrodes also function as the source electrodes.
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Accused Products
Abstract
A thin film transistor panel including: a transparent substrate; scanning lines made of a light blocking electroconductive material to be formed on the transparent substrate; data lines formed on the transparent substrate to be perpendicular to the scanning lines and made of a light blocking electroconductive material; thin film transistors, each provided with a transparent gate electrode connected to one of the scanning lines, a transparent drain electrode connected to one of the data lines, a transparent source electrode and a transparent semiconductor thin film; and transparent pixel electrodes connected to the thin film transistors, wherein each of the pixel electrodes is formed to cover at least a part of the gate electrode of each of the thin film transistors.
60 Citations
11 Claims
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1. A thin film transistor panel comprising:
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a transparent substrate; scanning lines which are made of a light blocking electroconductive material, and which are formed on the transparent substrate; data lines which are formed on the transparent substrate perpendicular to the scanning lines, and which are made of the light blocking electroconductive material; thin film transistors each including;
(i) a transparent gate electrode, a part of which overlaps one of the scanning lines so as to be electrically connected to the one of the scanning lines, (ii) a transparent drain electrode, a part of which overlaps one of the data lines so as to be electrically connected to the one of the data lines, (iii) a transparent source electrode, and (iv) a transparent metal oxide semiconductor thin film;transparent pixel electrodes which are formed with a transparent metal oxide as anode electrodes, and which are electrically connected to the source electrode; and an organic EL layer and a cathode electrode which are formed in a region corresponding to each of the anode electrodes, wherein each of the pixel electrodes covers at least a part of the gate electrode so as to avoid a region where the gate electrode overlaps the one of the scanning lines, and the pixel electrodes also function as the source electrodes. - View Dependent Claims (2, 3, 4, 5)
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6. A thin film transistor panel comprising:
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a transparent substrate; scanning lines which are made of a light blocking electroconductive material, and which are formed on the transparent substrate; data lines which are formed on the transparent substrate perpendicular to the scanning lines, and which are made of the light blocking electroconductive material; thin film transistors each including;
(i) a transparent gate electrode, a part of which overlaps one of the scanning lines so as to be electrically connected to the one of the scanning lines, (ii) a transparent drain electrode, a part of which overlaps one of the data lines so as to be electrically connected to the one of the data lines, (iii) a transparent source electrode, and (iv) a transparent metal oxide semiconductor thin film; andtransparent pixel electrodes which are electrically connected to the source electrode, wherein each of the thin film transistors includes a channel protecting film, wherein each of the pixel electrodes is located to cover all of a region where the gate electrode overlaps with the channel protecting film, and to avoid a region where the gate electrode overlaps the one of the scanning lines. - View Dependent Claims (7, 8, 9, 10, 11)
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Specification