High voltage switching devices and process for forming same

• US 7,795,707 B2
• Filed: 04/30/2003
• Issued: 09/14/2010
• Est. Priority Date: 04/30/2002
• Status: Expired due to Term

• Current Assignee: Wolfspeed, Inc.
• Original Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Inventors: Flynn, Jeffrey S., Brandes, George R., Vaudo, Robert P.
• Primary Examiner(s): Lee; Eugene
• Application Number:
  US10/513,009
• Publication Number:
  US 20050167697A1
• Time in Patent Office: 2,694 Days
• Field of Search: 257/656, 257/194, 257/E29.246
• US Class Current: 257/656
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/40 AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/861 Diodes
• CPC Class Codes: H01L 29/868 PIN diodes
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

The present invention relates to various switching device structures including Schottky diode (10), P—N diode, and P—I—N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers (16) of low dopant concentration (<1E16 cm−3) grown on a conductive GaN layer (14). The devices enable substantially higher breakdown voltage on hetero-epitaxial substrates (<2 KV) and extremely high breakdown voltage on homo-epitaxial substrates (>2 KV).

Claims

1. A microelectronic device structure adapted for high voltage operation, said microelectronic device structure comprising:

(a) a first conductive GaN base layer comprising a GaN structure having a thickness of greater than about 50 μ

m and having a top surface characterized by a dislocation defect density of not more than about 5×

10⁶/cm²;

(b) a second GaN layer having a dopant concentration of not more than about 1×

10¹⁶/cm³, disposed adjacent to the top surface of said first conductive GaN base layer; and

(c) at least one metal contact adjacent to at least one of (i) the top surface of said first conductive GaN base layer and (ii) said second GaN layer, forming a metal-to-semiconductor junction with at least one of said first conductive GaN base layer and said second GaN layer;

wherein said microelectronic device structure has a breakdown voltage of at least about 320V.

2. The microelectronic device structure of claim 1, wherein said GaN structure is formed by steps comprising:

(1) growing a first conductive GaN structure on a foreign substrate; and

(2) removing said first conductive GaN structure from the foreign substrate, to form a free-standing GaN structure.

3. The microelectronic device structure of claim 2, wherein said first conductive GaN structure is grown on the foreign substrate by hydride vapor phase epitaxy, wherein said first conductive GaN structure is removed from the foreign substrate by separation before formation of the second GaN layer thereon, and wherein the second GaN layer is formed on said first conductive GaN structure by hydride vapor phase epitaxy or metal-organic vapor-phase epitaxy.

4. The microelectronic device structure of claim 1, wherein said second GaN layer is more than about 10 μ

m in thickness.

5. The microelectronic device structure of claim 1, wherein a first metal contact of said at least one metal contact forms a Schottky contact with said second GaN layer, and wherein a second metal contact of said at least one metal contact forms an ohmic contact with said first conductive GaN base layer.

6. The microelectronic device structure of claim 1, having a breakdown voltage of greater than 2000V.

7. The microelectronic device structure of claim 1, wherein the top surface of said first conductive GaN base layer is undoped, and wherein the second GaN layer is subsequently grown uniformly adjacent to the first conductive GaN base layer.

8. The microelectronic device structure of claim 7, wherein the second GaN layer is grown uniformly by eliminating dopant or conductivity at an interface of the second GaN layer and the undoped top surface of the first conductive GaN base layer.

9. The microelectronic device structure of claim 1, comprising a Schottky diode selected from the group consisting of mesa-type Schottky diodes and planar-type Schottky diodes.

10. The microelectronic device structure of claim 1, further comprising at least one electrically conductive underside contact adjacent to the first conductive GaN base layer.

11. The microelectronic device structure of claim 1, wherein the at least one metal contact is disposed in direct contact with the first conductive GaN base layer.

12. The microelectronic device structure of claim 1, wherein the at least one metal contact is disposed in direct contact with the second GaN layer.

13. The microelectronic device structure of claim 1, wherein the at least one metal contact forms a metal-to-semiconductor junction with the first conductive GaN base layer.

14. The microelectronic device structure of claim 1, wherein the at least one metal contact forms a metal-to-semiconductor junction with the second GaN layer.

15. The microelectronic device structure of claim 1, wherein the first conductive GaN base layer is of n-type conductivity.

16. A microelectronic device structure adapted for high voltage operation, said microelectronic device structure comprising:

(a) a first GaN layer of n-type conductivity and comprising a GaN structure having a thickness of greater than about 50 μ

m and having a top surface characterized by a dislocation defect density of not more than about 5×

10⁶/cm²;

(b) a second GaN layer having a dopant concentration of not more than about 1×

10¹⁵/cm³, disposed adjacent to said first GaN layer;

(c) a third GaN layer of p-type conductivity, disposed adjacent to said second GaN layer; and

(d) at least one metal contact disposed adjacent to said third GaN layer;

wherein the microelectronic device structure has a breakdown voltage of at least about 320V.

17. The microelectronic device structure of claim 16, wherein said GaN structure is formed by steps comprising:

(1) growing a GaN structure of n-type conductivity on a foreign substrate; and

(2) removing said GaN structure of n-type conductivity from the foreign substrate, to form a free-standing GaN structure.

18. The microelectronic device structure of claim 17, wherein said GaN structure of n-type conductivity is grown on the foreign substrate by hydride vapor phase epitaxy, wherein said GaN structure of n-type conductivity is removed from the foreign substrate by separation technique before formation of the second GaN layer, and wherein the second GaN layer is formed by hydride vapor phase epitaxy or metal-organic vapor-phase epitaxy.

19. The microelectronic device structure of claim 16, wherein said second GaN layer is more than about 10 μ

m in thickness, and wherein said third GaN layer of p-type conductivity is more than about 0.25 μ

m in thickness.

20. The microelectronic device structure of claim 16, wherein a first metal contact of said at least one metal contact forms a first ohmic contact with said first GaN layer of n-type conductivity, and wherein a second metal contact of said at least one metal contact forms a second ohmic contact with said third GaN layer of p-type conductivity.

21. The microelectronic device structure of claim 16, wherein the second GaN layer is doped with germanium.

22. The microelectronic device structure of claim 16, wherein the top surface of said first GaN layer of n-type conductivity is undoped, and wherein the second GaN layer is subsequently grown uniformly adjacent to the first GaN layer.

23. The microelectronic device structure of claim 22, wherein the second GaN layer is grown uniformly by eliminating dopant or conductivity at an interface of the second GaN layer and the undoped top surface of the first GaN layer.

24. The microelectronic device structure of claim 16, comprising a Schottky diode selected from the group consisting of mesa-type Schottky diodes and planar-type Schottky diodes.

25. The microelectronic device structure of claim 16, further comprising at least one electrically conductive underside contact adjacent to the first GaN layer.

26. The microelectronic device structure of claim 16, wherein the at least one metal contact is disposed in direct contact with the third GaN layer.

27. The microelectronic device structure of claim 16, having a breakdown voltage of at least about 1000V.

28. The microelectronic device structure of claim 16, having a breakdown voltage of greater than 2000V.

29. A microelectronic device structure adapted for high voltage operation, said microelectronic device structure comprising:

(a) a first conductive GaN base layer having a top surface characterized by a substantially homogeneous dislocation defect density of not more than about 5×

10⁶/cm²;

(b) a second GaN layer having a dopant concentration of not more than about 1×

10¹⁶/cm3, disposed adjacent to the top surface of said first conductive GaN base layer; and

(c) at least one metal contact adjacent to of the top surface of said first conductive GaN base layer, forming a metal-to-semiconductor junction with said first conductive GaN base layer

wherein said microelectronic device structure has a breakdown voltage of at least about 320V.

30. The microelectronic device structure of claim 29, wherein the first conductive GaN base layer comprising a free-standing GaN structure.

31. The microelectronic device structure of claim 29, wherein said first conductive GaN base layer is more than about 50 μ

m in thickness, and wherein said second GaN layer is more than about 10 μ

m in thickness.

32. The microelectronic device structure of claim 29, wherein a metal contact of said at least one metal contact forms an ohmic contact with said first conductive GaN base layer, and wherein an additional metal contact is provided to form a Schottky contact with said second GaN layer.

33. The microelectronic device structure of claim 29, having a breakdown voltage of at least about 450V.

34. The microelectronic device structure of claim 29, having a breakdown voltage of at least 1000V.

35. The microelectronic device structure of claim 29, having a breakdown voltage of greater than 2000V.

36. The microelectronic device structure of claim 29, wherein the at least one metal contact is disposed in direct contact with the first conductive GaN base layer.

37. The microelectronic device structure of claim 29, wherein the additional metal contact is disposed in direct contact with the second GaN layer.

38. The microelectronic device structure of claim 29, wherein the first conductive GaN base layer is of n-type conductivity.