Patterned atomic layer epitaxy
First Claim
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1. A method of creating a structure, comprising:
- patterning a first portion of a first passivation layer with a first pattern, wherein the first passivation layer comprises a plurality of first nanoscale passivating particles, and wherein the first passivation layer is located on a first structural layer that comprises a plurality of first nanoscale structural particles such that patterning the first portion of the first passivation layer exposes a first portion of the first structural layer;
growing, via at least one heteroepitaxial cycle of selective atomic layer epitaxy (ALE), a plurality of second nanoscale structural particles on the first portion of the first structural layer, the plurality of second nanoscale structural particles having a different composition than the plurality of first nanoscale structure particles;
removing a second portion of the first passivation layer to expose a second portion of the first structural layer;
growing, via at least one homoepitaxial cycle of selective ALE, a plurality of third nanoscale structural particles on the second portion of the first structural layer, the third nanoscale structural particles having the same composition as the first nanoscale structure particles;
removing a plurality of second nanoscale passivating particles associated with the plurality of second nanoscale structural particles and growing a plurality of fourth nanoscale structural particles on the second nanoscale structural particles exposed by removing the plurality of second nanoscale passivating particles; and
removing a plurality of third nanoscale passivating particles associated with the plurality of third nanoscale structural particles and growing a plurality of fifth nanoscale structural particles on the third nanoscale structural particles exposed by removing the plurality of third nanoscale passivating particles.
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Abstract
A patterned layer is formed by removing nanoscale passivating particle from a first plurality of nanoscale structural particles or by adding nanoscale passivating particles to the first plurality of nanoscale structural particles. Each of a second plurality of nanoscale structural particles is deposited on each of corresponding ones of the first plurality of nanoscale structural particles that is not passivated by one of the plurality of nanoscale passivating particles.
140 Citations
31 Claims
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1. A method of creating a structure, comprising:
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patterning a first portion of a first passivation layer with a first pattern, wherein the first passivation layer comprises a plurality of first nanoscale passivating particles, and wherein the first passivation layer is located on a first structural layer that comprises a plurality of first nanoscale structural particles such that patterning the first portion of the first passivation layer exposes a first portion of the first structural layer; growing, via at least one heteroepitaxial cycle of selective atomic layer epitaxy (ALE), a plurality of second nanoscale structural particles on the first portion of the first structural layer, the plurality of second nanoscale structural particles having a different composition than the plurality of first nanoscale structure particles; removing a second portion of the first passivation layer to expose a second portion of the first structural layer; growing, via at least one homoepitaxial cycle of selective ALE, a plurality of third nanoscale structural particles on the second portion of the first structural layer, the third nanoscale structural particles having the same composition as the first nanoscale structure particles; removing a plurality of second nanoscale passivating particles associated with the plurality of second nanoscale structural particles and growing a plurality of fourth nanoscale structural particles on the second nanoscale structural particles exposed by removing the plurality of second nanoscale passivating particles; and removing a plurality of third nanoscale passivating particles associated with the plurality of third nanoscale structural particles and growing a plurality of fifth nanoscale structural particles on the third nanoscale structural particles exposed by removing the plurality of third nanoscale passivating particles. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of creating a structure, comprising:
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removing a portion of a first passivation layer to form a first pattern that exposes portions of a first structural layer underlying the first passivation layer; growing passivated structural material over the exposed portions of the first structural layer via at least one cycle of selective atomic layer epitaxy (ALE) to define a second structural layer and a second passivation layer; removing a portion of the second passivation layer to form a second pattern that exposes portions of the second structural layer; and growing passivated structural material over the exposed portions of the second structural layer via at least one cycle of selective atomic layer epitaxy (ALE) to define a third structural layer and a third passivation layer, the third passivation layer formed of a material different than the first passivation layer. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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23. A method of creating a structure, comprising:
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(a) patterning a first portion of a passivation layer to expose a first portion of a structural layer underlying the passivation layer; (b) growing a first passivated structural material over the first portion of the structural layer via at least one heteroepitaxial cycle of selective ALE of a first material to define a first portion of an additional structural layer and a first portion of an additional passivation layer; (c) removing a second portion of the passivation layer to expose a second portion of the structural layer; (d) growing a second passivated structural material over the second portion of the structural layer via at least one homoepitaxial cycle of selective ALE of a second material, the second material being of a different composition than the first material, to define a second portion of the additional structural layer and a second portion of the additional passivation layer, wherein the second portion of the additional structural layer is substantially coplanar with the first portion of the additional structural layer and wherein the second portion of the additional passivation layer is substantially coplanar with the first portion of the additional passivation layer; (e) removing a first portion of the additional passivation layer to expose a first portion of the additional structural layer; (f) growing a third passivated structural material over the first portion of the additional structural layer via at least one cycle of selective ALE of a third material to define a first portion of a further structural layer and a first portion of a further passivation layer; (g) removing a second portion of the additional passivation layer to expose a second portion of the additional structural layer; (h) growing a fourth passivated structural material over the second portion of the additional structural layer via at least one cycle of selective ALE of a fourth material, the fourth material being of a different composition than the third material, to define a second portion of the further structural layer and a second portion of the further passivation layer; and repeating steps (e), (f), (g), and (h) to form further structural layers. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31)
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Specification