Method and system for using a two-phases substrate cleaning compound

• US 7,799,141 B2
• Filed: 09/11/2006
• Issued: 09/21/2010
• Est. Priority Date: 06/27/2003
• Status: Expired due to Fees

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Korolik, Mikhail, Ravkin, Mike, de Larios, John M., Redeker, Fritz, Mikhaylichenko, Katrina, Freer, Erik M.
• Primary Examiner(s): Barr; Michael
• Assistant Examiner(s): GOLIGHTLY, ERIC WAYNE
• Application Number:
  US11/519,354
• Publication Number:
  US 20070087950A1
• Time in Patent Office: 1,471 Days
• Field of Search: None
• US Class Current: 134/6
• CPC Class Codes: B05D 3/10 by other chemical means
• CPC Class Codes: B08B 7/02 by distortion, beating, or vibration of the surface to be cleaned B08B7/0007 takes precedence
• CPC Class Codes: C11D 1/146 Sulfuric acid esters
• CPC Class Codes: C11D 17/0004 Non aqueous liquid compositions comprising insoluble particles
• CPC Class Codes: C11D 17/0013 Liquid compositions with insoluble particles in suspension C11D17/0021, C11D17/0026, C11D17/003 take precedence
• CPC Class Codes: C11D 17/0017 Multi-phase liquid compositions
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 3/14 Fillers; Abrasives ; Abrasive compositions; Suspending or absorbing agents not provided for in one single group of C11D3/12; Specific features concerning abrasives, e.g. granulometry or mixtures dyes, pigments C11D3/40
• CPC Class Codes: C11D 3/2079 Monocarboxylic acids-salts thereof
• CPC Class Codes: C11D 9/02 on alkali or ammonium soaps
• CPC Class Codes: C23G 1/00 Cleaning or pickling metallic material with solutions or molten salts with organic solvents C23G5/02
• CPC Class Codes: C23G 1/18 Organic inhibitors
• CPC Class Codes: G03F 7/42 Stripping or agents therefor
• CPC Class Codes: G03F 7/423 containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/02057 Cleaning during device manufacture
• CPC Class Codes: H01L 21/02096 only mechanical cleaning
• CPC Class Codes: H01L 21/31133 by chemical means
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/6708 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67086 : with the semiconductor substrates being dipped in baths or vessels
• CPC Class Codes: H01L 21/6715 : Apparatus for applying a liquid, a resin, an ink or the like H01L21/67126 takes precedence

Abstract

Cleaning compounds, apparatus, and methods to remove contaminants from a substrate surface are provided. An exemplary cleaning compound to remove particulate contaminants from a semiconductor substrate surface is provided. The cleaning compound includes a viscous liquid with a viscosity between about 1 cP to about 10,000 cP. The cleaning compound also includes a plurality of solid components dispersed in the viscous liquid, the plurality of solid components interact with the particulate contaminants on the substrate surface to remove the particulate contaminants from the substrate surface.

Claims

1. A method for removing particulate contaminants from a semiconductor substrate, comprising:

dispensing a cleaning compound having a viscous liquid with solid components dispersed therein on a surface of a substrate upon which particulate contaminants are present, wherein the solid components are carboxylic acids having a carbon number greater than or equal to four;

applying a mechanical force having a downward component to the cleaning compound to bring at least one of the solid components within proximity of a particulate contaminant present on the surface of the substrate, wherein applying the mechanical force to the cleaning compound is performed separately from dispensing the cleaning compound on the surface of the substrate, wherein an interaction is established between the at least one of the solid components and the particulate contaminant, and wherein the interaction is sufficient to overcome an adhesive force between the particulate contaminant and the surface of the substrate such that the particulate component is dislodged from the surface of the substrate; and

removing the at least one of the solid components and the particulate contaminant away from the surface of the substrate,

wherein the method is performed without causing damage to physical features present on the surface of the substrate.

2. The method of claim 1, wherein a viscosity of the viscous liquid is between about 1 cP to about 10,000 cP.

3. The method of claim 1, wherein the viscous liquid is a non-Newtonian liquid whose viscosity decreases with shear stress.

4. The method of claim 1, wherein the viscous liquid is a gel.

5. The method of claim 1, further comprising:

removing the cleaning compound from the surface of the substrate by applying a cleaning solution that hydrolyzes the viscous liquid, wherein the cleaning solution includes a chemical that enhances a solubility of the viscous liquid.

6. The method of claim 5, further comprising:

applying deionized water to remove the cleaning solution from the surface of the substrate.

7. The method of claim 1, wherein the at least one of the solid components and the particulate contaminant are removed from the surface of the substrate by a shear component of the mechanical force applied to the cleaning compound.

15. The method of claim 1, wherein the cleaning compound is dispensed on the surface of the substrate from an applicator;

and

wherein applying the mechanical force to the cleaning compound includes rotating the substrate beneath the applicator from which the cleaning compound is dispensed such that a rigid surface of the applicator applies a downward mechanical force to the cleaning compound having been previously dispensed on the surface of the substrate from the applicator.

16. The method of claim 1, wherein the carboxylic acids of the solid components are defined by organic acids that include one or more carboxyl groups (COOH).

17. The method of claim 1, wherein the carboxylic acids represent 3% to 5% by weight of the cleaning compound.

18. The method of claim 1, wherein the cleaning compound includes 0.05% to 5% by weight ammonium hydroxide to facilitate dispersion of the solid components within the viscous liquid.

19. The method of claim 1, wherein the cleaning compound includes 0.1% to 5% by weight ammonium dodecyl sulfate as a surfactant.

8. A method for removing particulate contaminants from a semiconductor substrate, comprising:

dispensing a cleaning compound having a viscous liquid with solid components dispersed therein on a substrate surface upon which particulate contaminants are present, wherein the solid components are carboxylic acids having a carbon number greater than or equal to four;

applying a mechanical force having a shear component to the cleaning compound to bring at least one of the solid components within proximity of a particulate contaminant present on the substrate surface, wherein applying the mechanical force to the cleaning compound is performed separately from dispensing the cleaning compound on the surface of the substrate, wherein a ratio of a surface area of the at least one of the solid components to a surface area of the particulate contaminant is greater than or equal to about 2500, and wherein a shear force applied on the particulate contaminant resulting from the shear component of the mechanical force applied to the cleaning compound is magnified by the ratio of the surface area, wherein the shear force applied on the particulate contaminant is greater than an adhesive force between the particulate contaminant and the substrate surface, thereby causing the particulate contaminant to be dislodged from the substrate surface; and

removing the at least one of the solid components and the particulate contaminant away from the substrate surface,

wherein the method is performed without causing damage to the physical features present on the substrate surface.

9. The method of claim 8, wherein the mechanical force applied to the cleaning compound has a downward component, and wherein the at least one of the solid components is brought into proximity of the particulate contaminant by the downward component of the mechanical force applied to the cleaning compound.

10. The method of claim 8, wherein a viscosity of the viscous liquid is between about 1 cP to about 10,000 cP.

11. The method of claim 8, wherein the viscous liquid is a non-Newtonian liquid whose viscosity decreases with shear stress.

12. The method of claim 8, wherein the viscous liquid is a gel.

13. The method of claim 8, further comprising

removing the cleaning compound from the substrate surface after removing the at least one of the solid components and the particulate contaminant away from the substrate surface by applying a cleaning solution that hydrolyzes the viscous liquid, wherein the cleaning solution includes a chemical that enhances a solubility of the viscous liquid.

14. The method of claim 13, further comprising:

removing the cleaning solution from the substrate surface by applying de-ionized water to the substrate surface.

20. The method of claim 8, wherein the cleaning compound is dispensed on the surface of the substrate from an applicator;

and

wherein applying the mechanical force to the cleaning compound includes rotating the substrate beneath the applicator from which the cleaning compound is dispensed such that a rigid surface of the applicator applies a downward mechanical force to the cleaning compound having been previously dispensed on the surface of the substrate from the applicator.

21. The method of claim 8, wherein the carboxylic acids of the solid components are defined by organic acids that include one or more carboxyl groups (COOH).

22. The method of claim 8, wherein the carboxylic acids represent 3% to 5% by weight of the cleaning compound.

23. The method of claim 8, wherein the cleaning compound includes 0.05% to 5% by weight ammonium hydroxide to facilitate dispersion of the solid components within the viscous liquid.

24. The method of claim 8, wherein the cleaning compound includes 0.1% to 5% by weight ammonium dodecyl sulfate as a surfactant.