Composite structures to prevent pattern collapse

• US 7,799,503 B2
• Filed: 05/17/2007
• Issued: 09/21/2010
• Est. Priority Date: 05/17/2007
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Perez, Javier, Gabor, Allen H., Brodsky, Colin J.
• Primary Examiner(s): Walke; Amanda C.
• Application Number:
  US11/750,026
• Publication Number:
  US 20080286683A1
• Time in Patent Office: 1,223 Days
• Field of Search: 430/270.1, 430/311, 430/312, 430/330, 430/331
• US Class Current: 430/270.1
• CPC Class Codes: G03F 7/0035 Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

Abstract

A method and a structure. The structure includes: a solid core comprising a first photoresist material, the core having a bottom surface on a substrate, a top surface and opposite first and second side surfaces between the top surface and the bottom surface; and a shell comprising a second photoresist material, the shell on the top surface of the substrate, the shell containing a cavity open to the top surface of the substrate, the shell formed over the top surface and the first and second side surfaces walls of the core, the core completely filling the cavity. The core is stiffer than the shell. The method includes: forming the core from a first photoresist layer and forming the shell from a second photoresist layer applied over the core. The core may be cross-linked to increase its stiffness.

Claims

1. A structure, comprising:

a solid core comprising a first photoresist material, said core having a bottom surface on a substrate, a top surface and opposite first and second side surfaces between said top surface and said bottom surface;

a shell comprising a single layer of a second photoresist material, said shell on said top surface of said substrate, said shell containing a cavity open to said top surface of said substrate, said shell covering an entirety of said top surface and entireties of said first and second side surfaces walls of said core, said core completely filling said cavity; and

wherein a first Young'"'"'s modulus of said core is greater than a second Young'"'"'s modulus of said shell.

2. The structure of claim 1, wherein said first photoresist material is more highly cross-linked than said second photoresist material.

3. The structure of claim 1, wherein (i) said first and second photoresist materials are both positive photoresist materials or (ii) said first and second photoresist materials are both negative photoresist materials.

4. The structure of claim 1, wherein (i) said first photoresist material is a positive photoresist material and second photoresist material is a negative photoresist material or (ii) said first photoresist material is a negative photoresist material and second photoresist material is a positive photoresist material.

5. The structure of claim 1, wherein a height (H1) of said shell measured from said top surface of said substrate to a top surface of said shell is at least three times a width (W1) of said shell measured in a direction perpendicular to opposite facing sidewalls of said shell.

6. The structure of claim 1, wherein a height of said core (H2) measured from said top surface of said substrate to said top surface of said core is less than three times a width (W2) of said core measured in a direction perpendicular to first and second sidewalls of said core.

7. The structure of claim 6, wherein H1 is equal to between about 3 times H2 to about 3/2 times H2 and W2 is equal to between about 1/2 times W1 to about 3/4 times W1.

23. The structure of claim 1, further including:

a space between said shell and adjacent photoresist structures.

8. A method, comprising, in the order recited:

forming a first photoresist layer on a top surface of a substrate, said first photoresist layer comprising a first photoresist material;

exposing said first photoresist layer to a first ultraviolet radiation through a first photomask and developing said exposed first photoresist layer to form a solid core comprising said first photoresist material, said core having a bottom surface on said substrate, a top surface and opposite first and second side surfaces between said top surface and said bottom surface;

forming a second photoresist layer on said top surface of a substrate and over said core, said second photoresist layer completely covering said top surface and opposite first and second side surfaces of said core, said second photoresist layer comprising a second photoresist material;

exposing said second photoresist layer to a second ultraviolet radiation through a second photomask and developing said exposed second photoresist layer to form a shell comprising a single layer of said second photoresist material, said shell on an entirety of said top surface of said substrate and entireties of said first and second side surfaces, said shell containing a cavity open to said top surface of said substrate, said core completely filling said cavity; and

wherein a first Young'"'"'s modulus of said core is greater than a second Young'"'"'s modulus of said shell.

9. The method of claim 8, further including:

between exposing said first photoresist layer through a first photomask and developing said exposed first photoresist layer and said forming a second photoresist layer, cross-linking said first photoresist material.

10. The method of claim 8, further including:

between said developing said exposed first photoresist layer and said forming said second photoresist layer, exposing said core to a blanket third ultra-violet radiation to harden said core.

11. The method of claim 8, wherein (i) said first and second photoresist materials are both positive photoresist materials or (ii) said first and second photoresist materials are both negative photoresist materials.

12. The method of claim 8, wherein (i) said first photoresist material is a positive photoresist material and second photoresist material is a negative photoresist material or (ii) said first photoresist material is a negative photoresist material and second photoresist material is a positive photoresist material.

13. The method of claim 8, wherein a height (H1) of said shell measured from said top surface of said substrate to a top surface of said shell is at least three times a width (W1) of said shell measured in a direction perpendicular to opposite facing sidewalls of said shell.

14. The method of claim 13, wherein a height of said core (H2) measured from said top surface of said substrate to said top surface of said core is less than three times a width (W2) of said core measured in a direction perpendicular to first and second sidewalls of said core.

15. The method of claim 14, wherein H1 is equal to between about 3 times H2 to about 3/2 times H2 and W2 is equal to between about 1/2 times W1 to about 3/4 times W1.

16. The method of claim 8, wherein said first and second photomasks are a same photomask.

17. The method of claim 8, further including:

said substrate including an etchable layer, a top surface of said etchable layer being said top surface of said substrate; and

after said exposing said second photoresist layer through a second photomask and developing said exposed second photoresist layer, etching a trench in said etchable layer where said etchable layer is not protected by said core and said shell.

18. The method of claim 8, further including:

after said exposing said second photoresist layer through a second photomask and developing said exposed second photoresist layer, ion implanting a dopant species into substrate where said substrate is not protected by said core and said shell.

19. The method of claim 8, further including:

between said developing said exposed first photoresist layer and said forming said second photoresist layer, heating said core to harden said core.

20. The method of claim 8, further including:

between said developing said exposed first photoresist layer and said forming said second photoresist layer, exposing said core to electron bombardment to harden said core.

21. The method of claim 8, further including:

between said exposed first photoresist layer and said forming said second photoresist layer, exposing said core to ion bombardment to harden said core.

22. The method of claim 8, further including:

said developing of said second photoresist layer creating a space between said shell and any adjacent photoresist structures.

24. A structure, comprising:

first and second solid cores, each core comprising a first photoresist material, each core having a respective bottom surface on a substrate, a respective top surface and respective opposite first and second side surfaces between said top surface and said bottom surface;

a first shell comprising a single layer of a second photoresist material, said first shell on said top surface of said substrate, said first shell containing a first cavity open to said top surface of said substrate, said first shell covering an entirety of said top surface and entireties of said first and second side surfaces walls of said first core, said first core completely filling said first cavity;

a second shell comprising a single layer of said second photoresist material, said second shell on said top surface of said substrate, said second shell containing a second cavity open to said top surface of said substrate, said second shell covering an entirety of said top surface and entireties of said second and second side surfaces walls of said second core, said second core completely filling said second cavity;

a first feature comprised of said first core and said first shell and a second feature comprised of said second core and said second shell, said first and second features spaced apart; and

wherein a Young'"'"'s modulus of said first and second cores has a high enough value to overcome a capillary force pulling said first and second features together when a liquid fills the space between said first and second features.