Ruthenium alloy film for copper interconnects
First Claim
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1. A method for forming interconnect wiring, comprising:
- (i) covering a surface of a connection hole penetrating through interconnect dielectric layers formed on a substrate for interconnect wiring, with an underlying alloy layer selected from the group consisting of a film of an alloy containing ruthenium (Ru) and at least one other metal atom (M) wherein M is Ti or Ta, a nitride film of the alloy, a carbide film of the alloy, and a nitride-carbide film of the alloy, by atomic layer deposition comprising supplying a Ru precursor and an M precursor alternately in cycles wherein the Ru precursor is supplied in two pulses per one pulse of the M precursor supplied in one cycle; and
(ii) filling copper or a copper compound by CVD into at least a part of the connection hole covered with the underlying alloy layer.
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Abstract
A method for forming interconnect wiring, includes: (i) covering a surface of a connection hole penetrating through interconnect dielectric layers formed on a substrate for interconnect wiring, with an underlying alloy layer selected from the group consisting of an alloy film containing ruthenium (Ru) and at least one other metal atom (M), a nitride film thereof, a carbide film thereof, and an nitride-carbide film thereof, and (ii) filling copper or a copper compound in the connection hole covered with the underlying layer.
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23 Claims
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1. A method for forming interconnect wiring, comprising:
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(i) covering a surface of a connection hole penetrating through interconnect dielectric layers formed on a substrate for interconnect wiring, with an underlying alloy layer selected from the group consisting of a film of an alloy containing ruthenium (Ru) and at least one other metal atom (M) wherein M is Ti or Ta, a nitride film of the alloy, a carbide film of the alloy, and a nitride-carbide film of the alloy, by atomic layer deposition comprising supplying a Ru precursor and an M precursor alternately in cycles wherein the Ru precursor is supplied in two pulses per one pulse of the M precursor supplied in one cycle; and (ii) filling copper or a copper compound by CVD into at least a part of the connection hole covered with the underlying alloy layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification