Power MOS device
First Claim
1. A semiconductor device comprising:
- a drain;
a body disposed over the drain, having a body top surface;
a source embedded in the body, extending downward from the body top surface into the body;
a gate trench extending through the source and the body into the drain;
a gate disposed in the gate trench;
a source body contact trench having a trench wall, a trench bottom, and an anti-punch through implant that is disposed along the trench wall; and
a contact electrode disposed in the source body contact trench;
wherein the contact electrode and the drain form a Schottky diode.
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Accused Products
Abstract
A semiconductor device comprises a drain, a body disposed over the drain, having a body top surface, a source embedded in the body, extending downward from the body top surface into the body, a gate trench extending through the source and the body into the drain, a gate disposed in the gate trench, a source body contact trench having a trench wall and an anti-punch through implant that is disposed along the trench wall. A method of fabricating a semiconductor device comprises forming a hard mask on a substrate having a top substrate surface, forming a gate trench in the substrate, through the hard mask, depositing gate material in the gate trench, removing the hard mask to leave a gate structure, forming a source body contact trench having a trench wall and forming an anti-punch through implant.
59 Citations
5 Claims
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1. A semiconductor device comprising:
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a drain; a body disposed over the drain, having a body top surface; a source embedded in the body, extending downward from the body top surface into the body; a gate trench extending through the source and the body into the drain; a gate disposed in the gate trench; a source body contact trench having a trench wall, a trench bottom, and an anti-punch through implant that is disposed along the trench wall; and a contact electrode disposed in the source body contact trench; wherein the contact electrode and the drain form a Schottky diode. - View Dependent Claims (2, 3)
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4. A semiconductor device comprising:
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a drain; a body disposed over the drain, having a body top surface; a source embedded in the body, extending downward from the body top surface into the body; a gate trench extending through the source and the body into the drain; a gate disposed in the gate trench; a source body contact trench having a trench wall, a trench bottom, and an anti-punch through implant that is disposed along the trench wall; and a contact electrode disposed in the source body contact trench; wherein the contact electrode includes a metal that is suitable for providing Ohmic contact to the source and the body regions; and
the contact electrode includes a metal that is suitable for forming a Schottky diode to the drain region.
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5. A semiconductor device comprising:
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a drain; a body disposed over the drain, having a body top surface; a source embedded in the body, extending downward from the body top surface into the body; a gate trench extending through the source and the body into the drain; a gate disposed in the gate trench; a source body contact trench having a trench wall, a trench bottom, and an anti-punch through implant that is disposed along the trench wall; and a contact electrode disposed in the source body contact trench; wherein the contact electrode and the drain form a Schottky diode situated below a body diode of the device.
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Specification