Power semiconductor circuit with busbar system

• US 7,800,213 B2
• Filed: 10/16/2006
• Issued: 09/21/2010
• Est. Priority Date: 04/16/2004
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Bayerer, Reinhold
• Primary Examiner(s): Cao; Phat X
• Assistant Examiner(s): VIEIRA, DIANA C
• Application Number:
  US11/549,779
• Publication Number:
  US 20070114665A1
• Time in Patent Office: 1,436 Days
• Field of Search: 361/677, 361/699, 361/714, 361/711, 361/713, 361715-722, 361/702, 257/687, 257/691, 257/700, 257/714, 257/E23.079, 257/E23.153
• US Class Current: 257/691
• CPC Class Codes: H01L 2224/2402 Laminated, e.g. MCM-L type
• CPC Class Codes: H01L 2224/24051 Conformal with the semiconductor or solid-state device
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01027 Cobalt [Co]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01042 Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/30107 Inductance

Abstract

A power semiconductor circuit has a power semiconductor module (2) embodied as a flat assembly. A particularly compact and space-saving production of a power semiconductor circuit may be achieved with the possibilities provided by an embodiment of the power semiconductor module, whereby the power semiconductor module (2) is arranged directly on a top track (3) of a power supply and/or output tracking (11) and a cooling device (5) is integrated in the tracking (11).

Claims

1. A power semiconductor circuit, comprising

a power semiconductor module which is in the form of a flat subassembly and in which at least one electronic component is arranged on a substrate and is contact-connected to a pad of a film via a contact area on a top side of the electronic component,

a busbar system which supplies and/or dissipates current and which comprises a cover busbar on which the power semiconductor module is arranged, the busbar system including a plurality of conductors in the form of plates arranged such that the plates are insulated on parallel planes, one of the plates being the cover busbar, and

a cooling device which is integrated in the busbar system and includes a plate interposed between the plates of the busbar system,

wherein the at least one electronic component is electrically conductive, arranged between the substrate and the film, and electrically connected to the cover busbar.

2. The power semiconductor circuit according to claim 1, wherein the cooling device directly cools the cover busbar.

3. The power semiconductor circuit according to claim 1, wherein the cooling device is a liquid cooling system.

4. The power semiconductor circuit according to claim 3, wherein the liquid coolant is electrically insulating.

5. The power semiconductor circuit according to claim 1, wherein the conductors which are in the form of plates are connected to one another by means of lamination.

6. The power semiconductor circuit according to claim 1, wherein the electronic component is connected to the substrate by way of a contact area on an underside of the electronic component and the substrate comprises a conductive material.

7. The power semiconductor circuit according to claim 1, wherein provision is made of a control circuit which is arranged, in the form of a flat unit, above the power semiconductor module.

8. The power semiconductor circuit according to claim 1, wherein the power semiconductor module and the busbar system are connected to one another without screw connections.

9. The power semiconductor circuit according to claim 1, wherein the film extends as far as the edge of the cover busbar.

10. The power semiconductor circuit according to claim 9, wherein the busbar system has, in addition to the cover busbar, at least one further busbar, the film extending as far as said further busbar.

11. The power semiconductor circuit according to claim 10, wherein the film contact-connects a pad of the at least one further busbar.

12. A power semiconductor circuit, comprising

a power semiconductor module which is in the form of a flat subassembly and in which at least one electronic component is arranged on a substrate and is contact-connected to a pad of a film via a contact area on a top side of the electronic component,

a busbar system which supplies and/or dissipates current and includes a first conductive busbar plate on which the power semiconductor module is arranged and a second conductive busbar plate spaced apart from the first conductive busbar plate by an insulating layer, the first and second conductive busbar plates being arranged on parallel planes, and

a liquid cooling device which is integrated in the busbar system and includes a plate interposed between the first and second conductive busbar plates, wherein the liquid coolant is electrically insulating,

wherein the at least one electronic component is electrically conductive, arranged between the substrate and the film, and electrically connected to the cover busbar.

13. The power semiconductor circuit according to claim 12, wherein the first conductive busbar plate, the second conductive busbar plate, the insulating layer and the liquid cooling device are connected to one another by means of lamination.

14. A power semiconductor circuit, comprising:

a first busbar;

a power semiconductor module arranged on the first busbar, the power semiconductor module having an electronic component arranged on a conductive substrate which is in contact with the first busbar;

a film laminated over the power semiconductor module and the first busbar, the film having a conductive pad contact-connected to a contact area arranged on a top side of the electronic component;

a second busbar arranged in a plane parallel with the first busbar;

a cooling device arranged between the first and second busbars; and

an insulating layer arranged between the cooling device and the second busbar,

wherein the electronic component is electrically conductive, arranged between the conductive substrate and the film, and electrically connected to the first busbar.

15. The power semiconductor circuit of claim 14, further comprising a third busbar arranged in a plane parallel with the first and second busbars and an additional insulating layer arranged between the second and third busbars.

16. The power semiconductor circuit of claim 15, further comprising a capacitor connected to the first and third busbars.