Metallic electrode forming method and semiconductor device having metallic electrode

• US 7,800,232 B2
• Filed: 02/29/2008
• Issued: 09/21/2010
• Est. Priority Date: 03/06/2007
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Kojima, Hisatoshi, Tomisaka, Manabu, Niimi, Akihiro
• Primary Examiner(s): HO, TU TU V
• Application Number:
  US12/073,166
• Publication Number:
  US 20080217771A1
• Time in Patent Office: 935 Days
• Field of Search: 257/773, 257/737, 257/781, 257/E21.508, 257/E21.599, 438/666, 438/614, 438/464
• US Class Current: 257/773
• CPC Class Codes: H01L 21/7684 Smoothing; Planarisation
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05099 Material
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05686 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01052 : Tellurium [Te]
• CPC Class Codes: H01L 2924/01059 : Praseodymium [Pr]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/19042 : being an inductor

Abstract

A metallic electrode forming method includes: forming a bed electrode on a substrate; forming a protective film with an opening on the bed electrode to expose the bed electrode from the opening; forming a metallic film covering the protective film and the opening; mounting the substrate on an adsorption stage, and measuring a surface shape of the metallic film by a surface shape measuring means; deforming the substrate by a deforming means so that a difference between the principal surface and a cutting surface is within a predetermined range; measuring a surface shape of the principal surface, and determining whether the difference is within a predetermined range; and cutting the substrate along with the cutting surface so that the metallic film is patterned to be a metallic electrode.

Claims

1. A semiconductor device comprising:

a semiconductor substrate having a principal surface and a backside surface;

a bed electrode electrically connected to a semiconductor element, wherein the bed electrode is disposed on the principal surface of the semiconductor substrate;

a protective film disposed over the bed electrode, wherein the protective film includes an opening, through which a part of the bed electrode is exposed; and

a metallic electrode disposed in the opening of the protective film and contacts the part of the bed electrode, wherein

flatness deviation of a surface of the protective film and a surface of the metallic electrode is smaller than asperity of the backside surface of the semiconductor substrate, and wherein

the metallic electrode is provided in such a manner that a metallic film for covering the protective film and the opening of the protective film is cut so as to be patterned as the metallic electrode under a condition where the semiconductor substrate with the metallic film is mounted on an adsorption stage.

2. The semiconductor device according to claim 1, wherein

the opening of the protective film and the part of the bed electrode provides a trench in such a manner that the protective film provides a sidewall of the trench, and the part of the bed electrode provides a bottom of the trench, and wherein

the metallic electrode is disposed on the sidewall and the bottom of the trench.

3. The semiconductor device according to claim 2, further comprising:

a solder layer disposed on the metallic electrode in the trench.

4. The semiconductor device according to claim 1, wherein

the metallic electrode protrudes from the opening of the protective film.

5. The semiconductor device according to claim 1, wherein

the protective film is made of resin.