High-pressure sensor device and method for manufacturing same

• US 7,802,481 B2
• Filed: 06/14/2006
• Issued: 09/28/2010
• Est. Priority Date: 06/14/2005
• Status: Active Grant

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Stoetzler, Arno, Henn, Ralf, Jasenek, Axel
• Primary Examiner(s): Epps; Georgia Y
• Assistant Examiner(s): WILLIAMS, DON J
• Application Number:
  US11/453,716
• Publication Number:
  US 20060278002A1
• Time in Patent Office: 1,567 Days
• Field of Search: 73/7, 737/17, 737/21, 737/27, 737/54, 737/06, 737/15, 737/56, 737/53, 737/77, 738/62, 736/32, 737/20, 737/25, 733/98, 738/626.2, 738/626.5, 738/620.42, 250/214.R, 250/214.1, 250/239, 250/208.4, 250/208.5, 250/227.18, 250/231.19, 250/238, 338/36, 338/42, 338/47, 257/417, 257/419, 257/254
• US Class Current: 73/715
• CPC Class Codes: G01L 19/0069 from the sensor to its support
• CPC Class Codes: G01L 19/148 Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
• CPC Class Codes: G01L 9/0055 bonded on a diaphragm

Abstract

A high-pressure sensor device has a pressure sensor element and an electric circuit, in particular in the form of a semiconductor component, the pressure sensor element having a membrane deformable under the effect of pressure, and a functional layer, which experiences a change in its electrical properties when deformed, and which has at least one electric terminal area, and the design and the manufacturing process being simplified in particular by the fact that the semiconductor component is directly connected to the electric terminal area via a solder layer.

Claims

1. A high-pressure sensor device, comprising:

a pressure sensor element including a membrane deformable under pressure and a functional layer mechanically coupled to the membrane, wherein the functional layer includes at least one electric terminal area and the functional layer undergoes a change in an electrical property thereof when deformed;

an electric circuit mounted above the functional layer, opposite the membrane, the electric circuit including an electrically-conductive elastic interface, and being arranged to receive and analyze an electric signal indicative of the change in the electrical property of the functional layer; and

a solder layer forming a direct electrical connection between the elastic interface and the at least one electric terminal, in addition to forming a mounting connection of the electric circuit.

2. The high-pressure sensor device as recited in claim 1, wherein the functional layer is surface-bonded to the membrane.

3. The high-pressure sensor device as recited in claim 1, further comprising:

an insulation layer provided between the functional layer and the membrane.

4. The high-pressure sensor device as recited in claim 1, wherein:

the electric circuit is connected to two terminal areas of the functional layer via the solder layer, and

the interface includes at least one elastic molded element for compensating thermal stresses, wherein the at least one elastic molded element is located in the electric circuit between the two terminal areas.

5. The high-pressure sensor device as recited in claim 1, wherein the membrane includes steel.

6. The high-pressure sensor device as recited in claim 1, wherein the functional layer includes a piezoelectric material.

7. The high-pressure sensor device as recited in claim 6, wherein the functional layer includes an NiCrSi alloy.

8. The high-pressure sensor device as recited in claim 1, wherein:

the electric circuit in the form of a semiconductor component includes, on its bottom side facing the functional layer, an aluminum plating having an admixture of several percent silicon and copper, which is covered by a nickel layer.

9. The high-pressure sensor device as recited in claim 1, wherein the electric circuit is bonded to the functional layer by an organic bonding compound in at least one area in which no solder layer is provided.

10. The high-pressure sensor device as recited in claim 1, further comprising:

a housing surrounding electric circuit and the pressure sensor element, wherein;

the housing includes an external electric terminal, and

additional electric circuit elements of at least one of the electric circuit and the pressure sensor element are situated in the housing.

11. The high-pressure sensor device as recited in claim 1, wherein the electric circuit includes a semiconductor component.

12. The high-pressure sensor device as recited in claim 1, wherein the interface comprises a flexible lug.

13. The high-pressure sensor device as recited in claim 12, wherein the flexible lug is separated from a central portion of the electric circuit.

14. The high-pressure sensor device as recited in claim 1, further comprising:

an insulation layer provided between the functional layer and the membrane;

wherein the interface includes a flexible lug, wherein the flexible lug is separated from a central portion of the electric circuit, and wherein the functional layer is surface-bonded to the membrane, and

wherein the electric circuit is connected to two terminal areas of the functional layer via the solder layer, and the interface includes at least one elastic molded element for compensating thermal stresses, the at least one elastic molded element being located in the electric circuit between the two terminal areas.

15. The high-pressure sensor device as recited in claim 14, wherein the electric circuit in the form of a semiconductor component includes, on its bottom side facing the functional layer, an aluminum plating having an admixture of several percent silicon and copper, which is covered by a nickel layer.

16. The high-pressure sensor device as recited in claim 15, wherein the membrane includes steel, and the functional layer includes a piezoelectric material.

17. The high-pressure sensor device as recited in claim 16, wherein the functional layer includes an NiCrSi alloy.

18. The high-pressure sensor device as recited in claim 14, wherein the electric circuit is bonded to the functional layer by an organic bonding compound in at least one area in which no solder layer is provided.

19. The high-pressure sensor device as recited in claim 18, wherein the membrane includes steel, and the functional layer includes a piezoelectric material.

20. The high-pressure sensor device as recited in claim 19, wherein the functional layer includes an NiCrSi alloy.

21. A method for manufacturing a high-pressure sensor device, comprising:

forming an electrically-conductive elastic interface on an electric circuit;

mounting the electric circuit above a functional layer of the sensor device;

connecting the electric circuit to terminal areas of a functional layer in such a way that solder is first applied to one of two elements including the interface and the functional layer; and

then joining and soldering the two elements using a soldering procedure, so as to form an electrical connection between the two elements, wherein the soldering also forms a mounting connection of the electric circuit.

22. The method as recited in claim 21, further comprising:

forming the interface by machining at least one lug from a housing of the electric circuit.

23. The method as recited in claim 22, further comprising:

separating the lug from a central portion of the electric circuit body.

24. The method as recited in claim 21, further comprising:

forming the interface by machining at least one lug from a housing of the electric circuit; and

separating the lug from a central portion of the electric circuit body; and

providing an insulation layer between the functional layer and the membrane;

wherein the at least one lug includes a flexible lug, wherein the flexible lug is separated from a central portion of the electric circuit, and wherein the functional layer is surface-bonded to the membrane, and

wherein the electric circuit is connected to the two terminal areas of the functional layer via the solder layer, and the interface includes at least one elastic molded element for compensating thermal stresses, the at least one elastic molded element being located in the electric circuit between the two terminal areas.

25. The method as recited in claim 24, wherein the electric circuit in the form of a semiconductor component includes, on its bottom side facing the functional layer, an aluminum plating having an admixture of several percent silicon and copper, which is covered by a nickel layer.

26. The method as recited in claim 25, wherein the membrane includes steel, and the functional layer includes a piezoelectric material.

27. The method as recited in claim 26, wherein the functional layer includes an NiCrSi alloy.

28. The method as recited in claim 24, wherein the electric circuit is bonded to the functional layer by an organic bonding compound in at least one area in which no solder layer is provided.

29. The method as recited in claim 28, wherein the membrane includes steel, and the functional layer includes a piezoelectric material.

30. The method as recited in claim 29, wherein the functional layer includes an NiCrSi alloy.