×

Mask pattern of semiconductor device and manufacturing method thereof

  • US 7,803,504 B2
  • Filed: 07/20/2007
  • Issued: 09/28/2010
  • Est. Priority Date: 07/21/2006
  • Status: Expired due to Fees
First Claim
Patent Images

1. A mask pattern, the mask pattern comprising:

  • a plurality of main patterns adjacent to one another, each comprising a first pattern and a plurality of second patterns extending perpendicularly from the first pattern, wherein each of the second patterns has a line width less than a line width of the first pattern; and

    one or more staggered assistance patterns on each of the second patterns, the assistance patterns having a line width greater than the line width of the second patterns.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×