Mask pattern of semiconductor device and manufacturing method thereof

• US 7,803,504 B2
• Filed: 07/20/2007
• Issued: 09/28/2010
• Est. Priority Date: 07/21/2006
• Status: Expired due to Fees

• Current Assignee: Dongbu HiTek Co., Ltd. (DB HiTek Co., Ltd.)
• Original Assignee: Dongbu HiTek Co., Ltd. (DB HiTek Co., Ltd.)
• Inventors: Lee, Jun Seok
• Primary Examiner(s): Huff; Mark F
• Assistant Examiner(s): Fraser; Stewart A
• Application Number:
  US11/880,395
• Publication Number:
  US 20080182181A1
• Time in Patent Office: 1,166 Days
• Field of Search: 430/5, 430/30, 430/296, 430311-313, 430/394, 438/253
• US Class Current: 430/5
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Abstract

Provided is a mask pattern of a semiconductor device. The mask pattern includes a plurality of main patterns and a plurality of assistance patterns. The main patterns are adjacent to one another. The assistance pattern is disposed on at least one of an end portion and a middle portion of each of the main patterns and has a line width greater than that of the main pattern. The assistance patterns are staggered.

Claims

1. A mask pattern, the mask pattern comprising:

a plurality of main patterns adjacent to one another, each comprising a first pattern and a plurality of second patterns extending perpendicularly from the first pattern, wherein each of the second patterns has a line width less than a line width of the first pattern; and

one or more staggered assistance patterns on each of the second patterns, the assistance patterns having a line width greater than the line width of the second patterns.

2. The mask pattern according to claim 1, wherein the first patterns are parallel, and the second patterns are staggered relative to second patterns of an adjacent first pattern.

3. The mask pattern according to claim 1, wherein a ratio of a height of the first patterns to the width of the first patterns is three or more.

9. The mask pattern according to claim 2, wherein the second patterns extending from one first pattern are interleaved with the second patterns extending from another first pattern.

10. The mask pattern according to claim 1, wherein the assistance patterns are located a first predetermined distance from one first pattern and a second predetermined distance from an adjacent first pattern.

11. The mask pattern according to claim 1, wherein the assistance patterns are tetragonal.

12. The mask pattern according to claim 1, wherein the assistance patterns cover the ends of the second patterns opposite the first pattern from which the assistance patterns extend.

20. The mask pattern according to claim 1, comprising a plurality of staggered assistance patterns on each of the second patterns.

4. A method of manufacturing a mask pattern, the method comprising:

forming a plurality of main patterns adjacent to one another, each comprising a first pattern and a plurality of second patterns extending perpendicularly from the first pattern, wherein the second patterns have a line width less than a line width of the first pattern; and

forming one or more staggered assistance patterns on each of the second patterns, the assistance patterns having a line width greater than the line width of the second patterns.

5. The method according to claim 4, wherein the first patterns are parallel, and the second patterns are staggered relative to second patterns of an adjacent first pattern.

6. The method according to claim 4, wherein forming the main patterns comprises:

cutting a middle portion of the each second pattern to form overlapped portions of the second patterns; and

adjusting a size of the overlapped portions of the cut second patterns,

wherein forming the assistance patterns comprises forming the assistance patterns at the overlapped portions.

7. The method according to claim 6, further comprising cutting each second pattern to create a plurality of ends in each second pattern.

8. The method according to claim 4, wherein a ratio of a height of the first patterns to the width of the first patterns is three or more.

13. The method according to claim 6, wherein the overlapped portions are a first predetermined distance from one first pattern and a second predetermined distance from an adjacent first pattern.

14. The method according to claim 5, wherein a plurality of second patterns extending from one first pattern is interleaved with a plurality of second patterns extending from another first pattern.

15. The method according to claim 4, wherein the assistance patterns are tetragonal.

16. The method according to claim 6, wherein the assistance patterns cover the overlapped portions.

17. The method according to claim 4, wherein the assistance patterns cover the ends of the second patterns opposite the first pattern from which they extend.

18. The method according to claim 6, wherein adjusting a size of the overlapped portions comprises reducing a size of the overlapped portions.

19. The method according to claim 18, wherein said size is reduced by 1 to 2 nm.