Methods for forming a dielectric layer within trenches
First Claim
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1. A method for forming a semiconductor structure, comprising:
- reacting a silicon precursor and an atomic oxygen precursor at a processing temperature of about 150°
C. or less to form a silicon oxide layer over a substrate; and
UV-O3 curing the silicon oxide layer within an ozone containing environment.
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Abstract
A method for forming a semiconductor structure includes reacting a silicon precursor and an atomic oxygen or nitrogen precursor at a processing temperature of about 150° C. or less to form a silicon oxide or silicon-nitrogen containing layer over a substrate. The silicon oxide or silicon-nitrogen containing layer is ultra-violet (UV) cured within an oxygen-containing environment.
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Citations
11 Claims
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1. A method for forming a semiconductor structure, comprising:
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reacting a silicon precursor and an atomic oxygen precursor at a processing temperature of about 150°
C. or less to form a silicon oxide layer over a substrate; andUV-O3 curing the silicon oxide layer within an ozone containing environment. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification