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Methods for forming a dielectric layer within trenches

  • US 7,803,722 B2
  • Filed: 10/22/2007
  • Issued: 09/28/2010
  • Est. Priority Date: 10/22/2007
  • Status: Active Grant
First Claim
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1. A method for forming a semiconductor structure, comprising:

  • reacting a silicon precursor and an atomic oxygen precursor at a processing temperature of about 150°

    C. or less to form a silicon oxide layer over a substrate; and

    UV-O3 curing the silicon oxide layer within an ozone containing environment.

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