Semiconductor device, manufacturing method of semiconductor device, display device, and manufacturing method of display device

• US 7,804,088 B2
• Filed: 04/06/2009
• Issued: 09/28/2010
• Est. Priority Date: 04/04/2008
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: Umeda, Ken-ichi, Tanaka, Atsushi, Nangu, Maki, Higashi, Kohei
• Primary Examiner(s): DANG, TRUNG Q
• Application Number:
  US12/418,991
• Publication Number:
  US 20090250695A1
• Time in Patent Office: 540 Days
• Field of Search: 257/43, 257/E21.459, 257/E29.296, 438/104
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device includes a substrate and a semiconductor layer having a channel region, the channel region is made from an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.

Claims

1. A semiconductor device comprising a substrate and a semiconductor layer having a channel region, wherein:

the channel region comprises an oxide semiconductor which satisfies Vc/Va>

4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.

2. The semiconductor device according to claim 1, wherein the oxide semiconductor comprises In and Zn.

3. The semiconductor device according to claim 2, wherein the oxide semiconductor further comprises at least one of Ga and Al.

4. The semiconductor device according to claim 1, wherein the semiconductor layer has a thickness of smaller than 300 nm.

5. The semiconductor device according to claim 1, wherein mobility of the semiconductor layer is higher than or equal to 0.5 cm²/V·

s.

6. The semiconductor device according to claim 1, wherein mobility of the semiconductor layer is higher than or equal to 10 cm²/V·

s.

7. A display device comprising the semiconductor device according to claim 1.

8. The display device according to claim 7, wherein the display device is a light-transmission-type display or a bottom-emission-type light emission display.

9. The display device according to claim 7, further comprising a transparent gate electrode, wherein at least part of incident light passes through the channel region and the gate electrode.

10. The display device according to claim 7, wherein at least 50% of incident light passes through the channel region.

11. The display device according to claim 7, wherein the display device comprises plural semiconductor devices and at least part of the plural semiconductor devices function as switching elements.

12. The display device according to claim 11, wherein the switching devices perform driving in such a manner that a ratio of on-current to off-current is larger than or equal to 10⁶.

13. The display device according to claim 7, wherein the display device comprises plural semiconductor devices and at least part of the plural semiconductor devices function as current driving elements for light-emitting elements.

14. The display device according to claim 7, further comprising a light absorption layer disposed on the light incidence side of the channel region, for absorbing at least part of light having a wavelength range of 400 nm or less of incident light.

15. The display device according to claim 7, further comprising a light absorption layer disposed on the light incidence side of the channel region, for absorbing at least part of light having a wavelength range of 350 nm or less of incident light.

16. The display device according to claim 14, wherein the light absorption layer also serves as at least one of the substrate and a polarizing plate.

17. A manufacturing method of a semiconductor device comprising a substrate and a semiconductor layer having a channel region, wherein:

the channel region is formed with an oxide semiconductor which satisfies Vc/Va>

4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.

18. The manufacturing method of a semiconductor device according to claim 17, wherein the oxide semiconductor comprises In and Zn.

19. The manufacturing method of a semiconductor device according to claim 18, wherein the oxide semiconductor further comprises at least one of Ga and Al.

20. The manufacturing method of a semiconductor device according to claim 17, wherein the semiconductor layer has a thickness of smaller than 300 nm.

21. The manufacturing method of a semiconductor device according to claim 17, wherein the semiconductor device is produced by forming a film by a precursor solution or a fine particle dispersion liquid for the semiconductor layer and annealing the film by heat or light.

22. The manufacturing method of a semiconductor device according to claim 17, wherein the semiconductor device is produced by forming a film that satisfies Vc/Va<

0.25 and annealing the film by heat or light.

23. The manufacturing method of a semiconductor device according to claim 17, wherein mobility of the semiconductor layer is higher than or equal to 0.5 cm²/V·

s.

24. The manufacturing method of a semiconductor device according to claim 17, wherein mobility of the semiconductor layer is higher than or equal to 10 cm²/V·

s.

25. A manufacturing method of a display device comprising the semiconductor device manufactured by the manufacturing method according to claim 17, wherein:

a transparent gate electrode is formed and part of incident light passes through the channel region and the gate electrode.

26. The manufacturing method of a display device according to claim 25, wherein at least 50% of the incident light passes through the channel region.

27. The manufacturing method of a display device according to claim 25, wherein a light absorption layer for absorbing at least part of light having a wavelength range of nm or less of the incident light is formed on the light incidence side of the channel region.

28. The manufacturing method of a display device according to claim 25, a light absorption layer for absorbing at least part of the light having a wavelength range of 350 nm or less of the incident light is formed on the light incidence side of the channel region.

29. The manufacturing method of a display device according to claim 27, wherein the light absorption layer also serves as at least one of the substrate and a polarizing plate.