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Polarization-reversed III-nitride light emitting device

  • US 7,804,100 B2
  • Filed: 03/14/2005
  • Issued: 09/28/2010
  • Est. Priority Date: 03/14/2005
  • Status: Active Grant
First Claim
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1. A structure comprising:

  • a device structure comprising a III-nitride light emitting region disposed between a p-type region and an n-type region, the light emitting region comprising a wurtzite crystal structure; and

    a non-III-nitride material disposed between two surfaces, wherein;

    one of the surfaces is a surface of a wurtzite crystal portion of the device structure, the wurtzite crystal portion of the device structure comprising alternating layers of group III atoms and group V atoms, wherein the surface of the wurtzite crystal portion of the device structure comprises a surface of a layer of group III atoms; and

    the other of the surfaces is a surface of a wurtzite crystal portion of a second structure, the wurtzite crystal portion of the second structure comprising alternating layers of group III atoms and group V atoms, wherein the surface of the wurtzite crystal portion of the second structure comprises a surface of a layer of group III atoms; and

    the non-III-nitride material is in direct contact with the two surfaces;

    wherein across an interface disposed between the light emitting region and the p-type region, a wurtzite c-axis, defined as pointing from a nitrogen face of a III-nitride unit cell to a group III atom face of the III-nitride unit cell, points toward the light emitting region.

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