Semiconductor light-emitting device
DCFirst Claim
1. A semiconductor light emitting diode comprising a substrate, an ohmic electrode and a plurality of semiconductor layers and configured so that light generated in said plurality of semiconductor layers is emitted from said ohmic electrode or from said substrate,wherein said substrate comprises sapphire,protruding portions are formed in a repeating pattern within a surface of the substrate so as to define a polygon as the repeating pattern in plan view of the substrate while the rest of the surface is substantially flat so as to scatter or diffract light generated in said semiconductor layers, andcross sections of the protruding portions taken along planes orthogonal to the surface of the substrate are semi-circular in shape.
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Abstract
A semiconductor light emitting device including a substrate, an electrode and a light emitting region is provided. The substrate may have protruding portions formed in a repeating pattern on substantially an entire surface of the substrate while the rest of the surface may be substantially flat. The cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate may be semi-circular in shape. The cross sections of the protruding portions may in alternative be convex in shape. A buffer layer and a GaN layer may be formed on the substrate.
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Citations
47 Claims
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1. A semiconductor light emitting diode comprising a substrate, an ohmic electrode and a plurality of semiconductor layers and configured so that light generated in said plurality of semiconductor layers is emitted from said ohmic electrode or from said substrate,
wherein said substrate comprises sapphire, protruding portions are formed in a repeating pattern within a surface of the substrate so as to define a polygon as the repeating pattern in plan view of the substrate while the rest of the surface is substantially flat so as to scatter or diffract light generated in said semiconductor layers, and cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate are semi-circular in shape.
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36. A semiconductor light emitting diode comprising a substrate, an ohmic electrode and a plurality of semiconductor layers and configured so that light generated in said plurality of semiconductor layers is emitted from said ohmic electrode or from said substrate,
wherein said substrate comprises sapphire, protruding portions are formed in a repeating pattern within substantially an entire surface of the substrate so as to define a polygon as the repeating pattern in plan view of the substrate while the rest of the surface is substantially flat, cross sections of the protruding portions taken along planes orthogonal to the surface of the substrate are convex in shape, and said protruding portions are formed so as to scatter or to diffract light generated in said plurality of light semiconductor layers.
Specification