Device structures for a memory cell of a non-volatile random access memory and design structures for a non-volatile random access memory

• US 7,804,124 B2
• Filed: 05/09/2008
• Issued: 09/28/2010
• Est. Priority Date: 05/09/2008
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Chatty, Kiran V., Abadeer, Wagdi W., Tonti, William R., Rankin, Jed H., Gauthier, Robert J. Jr., Shi, Yun
• Primary Examiner(s): Wilson; Allan R.
• Application Number:
  US12/118,241
• Publication Number:
  US 20090278185A1
• Time in Patent Office: 872 Days
• Field of Search: 257/316, 257/347, 257/E29.295, 257/E29.3
• US Class Current: 257/316
• CPC Class Codes: H01L 29/40114 the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
• CPC Class Codes: H01L 29/42324 Gate electrodes for transistors with a floating gate
• CPC Class Codes: H01L 29/7881 Programmable transistors with only two possible levels of programmation H01L29/7888 takes precedence

Abstract

Device and design structures for memory cells in a non-volatile random access memory (NVRAM). The device structure includes a semiconductor body in direct contact with the insulating layer, a control gate electrode, and a floating gate electrode in direct contact with the insulating layer. The semiconductor body includes a source, a drain, and a channel between the source and the drain. The floating gate electrode is juxtaposed with the channel of the semiconductor body and is disposed between the control gate electrode and the insulating layer. A first dielectric layer is disposed between the channel of the semiconductor body and the floating gate electrode. A second dielectric layer is disposed between the control gate electrode and the floating gate electrode.

Claims

1. A device structure for a non-volatile random access memory formed on an insulating layer, the device structure comprising:

a semiconductor body in direct contact with the insulating layer, the semiconductor body including a source, a drain, and a channel between the source and the drain;

a control gate electrode;

a floating gate electrode in direct contact with the insulating layer, the floating gate electrode juxtaposed with the channel of the semiconductor body, and the floating gate electrode disposed between the control gate electrode and the insulating layer;

a first dielectric layer disposed between the channel of the semiconductor body and the floating gate electrode; and

a second dielectric layer disposed between the control gate electrode and the floating gate electrode, the second dielectric layer in contact with the semiconductor body.

2. The device structure of claim 1 wherein the semiconductor body has a top surface and a sidewall that extends from the top surface of the semiconductor body to the insulating layer, the floating gate electrode has a top surface and a sidewall that extends from the top surface of the floating gate electrode toward the insulating layer, and the first dielectric layer is disposed between the sidewall of the semiconductor body and the sidewall of the floating gate electrode.

3. The device structure of claim 2 wherein the first dielectric layer includes a first silicon dioxide layer on the sidewall of the channel and a second silicon dioxide layer on the sidewall of the floating gate electrode.

4. The device structure of claim 3 wherein the first dielectric layer further includes a dielectric fill layer between the first and second silicon dioxide layers.

5. The device structure of claim 2 wherein the control gate electrode has a top surface and a sidewall that extends from the top surface toward the insulating layer, and the second dielectric layer is disposed between the top surface of the floating gate electrode and the top surface of the control gate electrode.

6. The device structure of claim 1 wherein the control gate electrode has a sidewall that is approximately aligned with a first interface between the drain and the channel or with a second interface between the source and the channel.

7. A design structure embodied in a non-transitory machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising:

a semiconductor body in direct contact with an insulating layer, the semiconductor body including a source, a drain, and a channel between the source and the drain;

a control gate electrode;

a floating gate electrode in direct contact with the insulating layer, the floating gate electrode juxtaposed with the channel of the semiconductor body, and the floating gate electrode disposed between the control gate electrode and the insulating layer;

a first dielectric layer disposed between the channel of the semiconductor body and the floating gate electrode; and

a second dielectric layer disposed between the control gate electrode and the floating gate electrode, the second dielectric layer in contact with the semiconductor body.

8. The design structure of claim 7 wherein the design structure comprises a netlist.

9. The design structure of claim 7 wherein the design structure resides on storage medium as a data format used for the exchange of layout data of integrated circuits.

10. The design structure of claim 7 wherein the design structure resides in a programmable gate array.

11. The design structure of claim 7 wherein the semiconductor body has a top surface and a sidewall that extends from the top surface of the semiconductor body to the insulating layer, the floating gate electrode has a top surface and a sidewall that extends from the top surface of the floating gate electrode toward the insulating layer, and the first dielectric layer is disposed between the sidewall of the semiconductor body and the sidewall of the floating gate electrode.

12. The design structure of claim 11 wherein the first dielectric layer includes a first silicon dioxide layer on the sidewall of the channel and a second silicon dioxide layer on the sidewall of the floating gate electrode.

13. The design structure of claim 12 wherein the first dielectric layer further includes a dielectric fill layer between the first and second silicon dioxide layers.

14. The design structure of claim 11 wherein the control gate electrode has a top surface and a sidewall that extends from the top surface toward the insulating layer, and the second dielectric layer is disposed between the top surface of the floating gate electrode and the top surface of the control gate electrode.

15. The design structure of claim 7 wherein the control gate electrode has a sidewall that is approximately aligned with a first interface between the drain and the channel or with a second interface between the source and the channel.