Integrated circuit manufacturing methods with patterning device position determination

• US 7,804,584 B2
• Filed: 10/31/2008
• Issued: 09/28/2010
• Est. Priority Date: 06/27/2003
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Van Der Wijst, Marc Wilhelmus Maria, Franken, Dominicus Jacobus Petrus Adrianus, Van Der Pasch, Engelbertus Antonius Franciscus, Engels, Marc Johannes Martinus, Box, Wilhelmus Josephus, Bartray, Petrus Rutgerus, Luttikhuis, Bernardus Antonius Johannes
• Primary Examiner(s): Mathews; Alan A
• Application Number:
  US12/262,647
• Publication Number:
  US 20090061361A1
• Time in Patent Office: 697 Days
• Field of Search: 430/22, 355/53, 355/55, 355/75, 355/77
• US Class Current: 355/77
• CPC Class Codes: G03F 7/70716 Stages
• CPC Class Codes: G03F 7/70775 Position control, e.g. interferometers or encoders for determining the stage position

Abstract

Methods of manufacturing an integrated circuit by a lithographic apparatus are disclosed. The methods include patterning a radiation beam with a patterning device, projecting the patterned beam onto a substrate using a projection system, and determining the position of the patterning device. In one example, the patterning device'"'"'s position relative to the projection system is determined by measuring the position of the patterning device'"'"'s support structure. In another example, the position can be determined by measuring a position of the patterning device relative to its support and by measuring a position of the support. In another example, a Z-position of the patterning device is determined by directing at least one beam of radiation onto a part of the patterning device located outside a pattern area. This can be done by directing a pair of laser beams from sensors on the projection system to reflecting strips on the patterning device.

Claims

1. A method of manufacturing an integrated circuit with a lithographic apparatus, the method comprising:

patterning a beam of radiation with a patterning device;

projecting the patterned beam of radiation onto a substrate with a projection system; and

determining, during operation of the lithographic apparatus, the position of the patterning device relative to the projection system with a laser beam reflected from a surface of the patterning device that is parallel planar with a patterned plane of the patterning device,

wherein the location on the surface of the patterning device at which the laser beam is reflected is outside of a pattern area of the patterning device.

2. A method according to claim 1, further comprising moving the patterning device based on the determined position of the patterning device.

3. A lithographic apparatus configured to perform the method of claim 1.

4. A method of manufacturing an integrated circuit with a lithographic apparatus, the method comprising:

patterning a beam of radiation with a patterning device;

imaging the patterned beam of radiation onto a target portion of a substrate with a projection system; and

determining, during operation of the lithographic apparatus, the position of the patterning device relative to the projection system with a laser beam reflected from a surface of the patterning device that is parallel planar with a patterned plane of the patterning device,

wherein the location on the surface of the patterning device at which the laser beam is reflected is outside of a pattern area of the patterning device.

5. A method according to claim 4, wherein the beam of radiation is generated by an EUV radiation source.

6. A method according to claim 4, wherein said measuring the position of the patterning device comprises using a measuring unit that comprises a 6 degrees of freedom interferometer measurement system.

7. A method according to claim 4, wherein said patterning the beam of radiation comprises irradiating the patterning device along a scanning direction.

8. A method according to claim 7, wherein said determining the position of the patterning device relative to the projection system comprises using at least three measurement points in a first plane, the first plane being at an angle to the scanning direction, at least two measurement points being on a first line that is not in the first plane, and at least one point both not being in the first plane and not being on the first line.

9. A method according to claim 8, wherein the measurement points are located on the patterning device.

10. A method according to claim 9, wherein at least two measurement points are located on the patterning device outside a pattern area of the patterning device.

11. A method according to claim 4, further comprising moving the patterning device based on the measured position of the patterning device.

12. A lithographic apparatus configured to perform the method of claim 4.

13. A method according to claim 4, wherein said measuring the position of the patterning device comprises using a sensor that is mounted on the projection system.

14. A method of manufacturing an integrated circuit with a lithographic apparatus, the method comprising:

patterning a first beam of radiation with a patterning device;

projecting the patterned beam of radiation onto a substrate with a projection system; and

determining the Z-position of the patterning device relative to the projection system using a second beam of radiation directed onto a surface of the patterning device that is parallel planar with a patterned plane of the patterning device, the surface being located outside of the pattern area of the patterning device.

15. A method according to claim 14, wherein the second beam of radiation is directed in the Z-direction to the patterning device.

16. A method according to claim 14, wherein the Z-position is determined by measuring normally with respect to the patterning device, the Z-position being part of a spatial position of the patterning device relative to the projection system.

17. A method according to claim 16, wherein sensors mounted on the projection system direct the second beam of radiation onto the surface of the patterning device that is located outside of the pattern area of the patterning device.

18. A method according to claim 17, wherein the surface of the patterning device that is parallel planar with a patterned plane of the patterning device comprises a reflecting strip, and the determining comprises using the sensors to direct the second beam of radiation to the reflecting strip.

19. A method according to claim 14, further comprising moving the patterning device based on the measured Z-position of the patterning device.

20. A lithographic apparatus configured to perform the method of claim 14.