Optical structures including selectively positioned color centers, photonic chips including same, and methods of fabricating optical structures

• US 7,805,030 B2
• Filed: 03/08/2007
• Issued: 09/28/2010
• Est. Priority Date: 03/08/2007
• Status: Active Grant

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Kamins, Theodore I., Bratkovski, Alexandre M.
• Primary Examiner(s): HAHM, SARAH UH YOUNG
• Application Number:
  US11/716,174
• Publication Number:
  US 20080219311A1
• Time in Patent Office: 1,300 Days
• Field of Search: None
• US Class Current: 385/14
• CPC Class Codes: G02B 6/12007 forming wavelength selective elements, e.g. multiplexer, demultiplexer

Abstract

Various aspects of the present invention are directed to optical structures including selectively positioned color centers, methods of fabricating such optical structures, and photonic chips that utilize such optical structures. In one aspect of the present invention, an optical structure includes an optical medium having a number of strain-localization regions. A number of color centers are distributed within the optical medium in a generally selected pattern, with at least a portion of the strain-localization regions including one or more of the color centers. In another aspect of the present invention, a method of positioning color centers in an optical medium is disclosed. In the method, a number of strain-localization regions are generated in the optical medium. The optical medium is annealed to promote diffusion of at least a portion of the color centers to the strain-localization regions.

Claims

1. An optical structure, comprising:

an optical medium including a number of strain-localization regions; and

a number of color centers distributed within the optical medium in a generally selected pattern, at least a portion of the strain-localization regions including one or more of the color centers.

2. The optical structure of claim 1, further comprising:

a number of strained structures formed on a surface of the optical medium, each of the strained structures including at least one stress-concentration feature that induces a corresponding one of the strain-localization regions in the optical medium.

3. The optical structure of claim 2 wherein the strained structures are spaced apart so that the strain-localization regions do not substantially interact with each other.

4. The optical structure of claim 1, further comprising:

a number of strained structures formed on a surface of the optical medium, the strained structures arranged in a selected pattern so that a maximum strain within each of the strain-localization regions is positioned between adjacent strained structures of the number of strained structures.

5. The optical structure of claim 1, further comprising a number of surface-relief features formed on the optical medium.

6. The optical structure of claim 5, further comprising a strained layer formed over a surface of the optical medium including the surface-relief features, each of the strain-localization regions located at least proximate one of the surface-relief features.

7. The optical structure of claim 1, further comprising:

a layer formed on the optical medium, the layer including first portions implanted with ions and second portions not implanted with ions, each of the strain-localization regions located adjacent to a boundary between adjacent first and second portions.

8. The optical structure of claim 1 wherein the optical medium comprises one of:

diamond;

aluminum oxide; and

a refractory metal oxide.

9. The optical structure of claim 1 wherein each of the color centers comprises one of:

a nitrogen-vacancy center;

a nickel center;

a nickel-nitrogen complex center; and

a silicon-vacancy center.

10. A photonic chip, comprising:

an optical structure comprising;

an optical medium including a number of strain-localization regions; and

a number of color centers distributed within the optical medium in a generally selected pattern, at least a portion of the strain-localization regions including at least one of the color centers;

a bus waveguide;

a number of nodes, each of the nodes configured to be selectively coupled to the bus wave guide, wherein each of the nodes comprises;

a photonic device configured to transmit one or more electromagnetic waves;

at least one color center of the number of color centers, the at least one color center coupled to the photonic device; and

a switch operable to selectively control transmission of electromagnetic waves between the between the bus waveguide and the at least one color center.

11. A method of positioning color centers in an optical medium, comprising:

generating a number of strain-localization regions in the optical medium; and

annealing the optical medium to promote diffusion of at least a portion of the color centers to the strain-localization regions.

12. The method of claim 11 wherein generating a number of strain-localization regions in the optical medium comprises:

depositing a strained layer on a surface of the optical medium;

patterning the strained layer to form a number of strained structures, each of the strained structures including at least one stress-concentration feature located on the surface of the optical medium; and

wherein each of the at least one stress-concentration feature induces a corresponding one of the strain-localizations regions in the optical medium.

13. The method of claim 11 wherein generating a number of strain-localization regions in the optical medium comprises:

forming a selected pattern of surface-relief features on the optical medium; and

forming a strained layer over the surface-relief features.

14. The method of claim 13 wherein forming a selected pattern of surface-relief features on the optical medium comprises:

forming each of the surface-relief features as a recess or a projection.

15. The method of claim 13 wherein forming a selected pattern of surface relief features on the optical medium comprises:

self-assembling the surface-relief features on a surface of the optical medium.

16. The method of claim 11 wherein generating a number of strain-localization regions in the optical medium comprises:

depositing a strained layer on a surface of the optical medium; and

implanting ions in selected portions of the strained layer to relieve strain in the selected portions.

17. The method of claim 11 wherein generating a number of strain-localization regions in the optical medium comprises:

depositing a layer on a surface of the optical medium; and

implanting ions in selected portions of the layer to generate strain in the selected portions.

18. The method of claim 11 wherein generating a number of strain-localization regions in the optical medium comprises:

depositing a strained layer on a surface of the optical medium;

patterning the strained layer to form a number of strained structures, each of the strained structures including at least one stress-concentration feature located on the surface of the optical medium; and

arranging the strained structures so that a maximum strain within each of the strain-localization regions is located between adjacent strained structures of the number of strained structures.

19. The method of claim 11 wherein the optical medium comprises one of:

diamond;

aluminum oxide; and

a refractory metal oxide.

20. The method of claim 11 wherein each of the color centers comprises one of:

a nitrogen-vacancy center;

a nickel center;

a nickel-nitrogen complex center; and

a silicon-vacancy center.