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Method to address carbon incorporation in an interpoly oxide

  • US 7,806,988 B2
  • Filed: 09/28/2004
  • Issued: 10/05/2010
  • Est. Priority Date: 09/28/2004
  • Status: Active Grant
First Claim
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1. A method of removing interfacial carbon from a device structure formed on a semiconductor wafer, the method comprising:

  • providing the semiconductor wafer and device structure with interfacial carbon and a photoresist layer;

    performing a dry stripping process to remove the photoresist layer on the device structure;

    using a first cleaning solution to perform a first cleaning process to remove said interfacial carbon on or near a surface of the device structure, the first cleaning solution consisting of hot phosphoric acid (H3PO4);

    using a second cleaning solution to perform a second cleaning process to remove residual first cleaning solution on the surface of the device structure, the second cleaning solution being DI water; and

    spin-drying the semiconductor wafer.

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