Method to address carbon incorporation in an interpoly oxide
First Claim
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1. A method of removing interfacial carbon from a device structure formed on a semiconductor wafer, the method comprising:
- providing the semiconductor wafer and device structure with interfacial carbon and a photoresist layer;
performing a dry stripping process to remove the photoresist layer on the device structure;
using a first cleaning solution to perform a first cleaning process to remove said interfacial carbon on or near a surface of the device structure, the first cleaning solution consisting of hot phosphoric acid (H3PO4);
using a second cleaning solution to perform a second cleaning process to remove residual first cleaning solution on the surface of the device structure, the second cleaning solution being DI water; and
spin-drying the semiconductor wafer.
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Abstract
A method of removing a mask and addressing interfacial carbon chemisbored in a semiconductor wafer starts with placing the semiconductor wafer into a dry strip chamber. The dry stripping process is performed to remove the mask on the semiconductor wafer. The semiconductor wafer is then subjected to a cleaning solution to perform a cleaning process to remove particles on the surface of the semiconductor wafer and to address the interfacial carbon. The cleaning solution being either water containing ozone (O3) and ammonia (NH3), or a solution of hot phosphoric acid (H3PO4).
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Citations
28 Claims
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1. A method of removing interfacial carbon from a device structure formed on a semiconductor wafer, the method comprising:
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providing the semiconductor wafer and device structure with interfacial carbon and a photoresist layer; performing a dry stripping process to remove the photoresist layer on the device structure; using a first cleaning solution to perform a first cleaning process to remove said interfacial carbon on or near a surface of the device structure, the first cleaning solution consisting of hot phosphoric acid (H3PO4); using a second cleaning solution to perform a second cleaning process to remove residual first cleaning solution on the surface of the device structure, the second cleaning solution being DI water; and spin-drying the semiconductor wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of removing a photoresist layer on a device structure formed on a semiconductor wafer, the method comprising:
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performing a dry stripping process to remove the photoresist layer on the device structure; horizontally rotating the semiconductor wafer and performing a wet cleaning process on the device structure, the wet cleaning process comprising; using a first cleaning solution to perform a first cleaning process to remove particles on the surface of the device structure, the first cleaning solution consisting of hot phosphoric acid (H3PO4); and using a second cleaning solution to perform a second cleaning process to remove the first cleaning solution employed in the first cleaning process, the second cleaning solution being DI water, and spin-drying the semiconductor wafer. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method of processing a wafer, the method comprising:
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providing a wafer having a device structure with a polysilicon surface layer covered by amorphous carbon, thereby contaminating the polysilicon surface layer with interfacial carbon; dry stripping the polysilicon surface layer; washing the wafer with a solution consisting of hot phosphoric acid (H3PO4); and rinsing the wafer. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A method of manufacturing an electronic device, in which a device structure formed on a substrate is placed inside a process chamber and a surface of the substrate is subjected to a treatment comprising:
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performing a dry stripping process to remove a mask layer on the device structure formed on the substrate; horizontally rotating the substrate and performing a wet cleaning process on the device structure formed on the substrate, the wet cleaning process comprising; using a first cleaning solution to perform a first cleaning process to remove particles on the surface of the device structure, the first cleaning solution consisting of hot phosphoric acid (H3PO4); using a second cleaning solution to perform a second cleaning process to remove a first cleaning solution employed in the first cleaning process, the second cleaning solution being DI water; using a third cleaning solution to perform an optional third cleaning process to remove particles on the surface of the semiconductor wafer; and using a fourth cleaning solution to perform an optional fourth cleaning process to remove a residual third cleaning solution employed in the third cleaning process if the optional third cleaning process is performed, the fourth cleaning solution being DI water; and spin-drying the device structure. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28)
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Specification