Method of manufacturing semiconductor element
First Claim
1. A method of manufacturing a semiconductor element, comprising:
- implanting ions of a dopant having a large diffusion coefficient into a semiconductor to provide a doped layer; and
irradiating the doped layer with a plurality of pulsed laser beams, and with at least one continuous laser beam, supplied by a plurality of laser irradiation devices to activate the doped layer and provide an activated doped layer that is one of a single doped layer or a plurality of successive doped layers which each have respective conduction types that are one of identical or different.
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Accused Products
Abstract
A method of manufacturing a semiconductor element includes implanting ions of a dopant having a large diffusion coefficient into a semiconductor to provide a doped layer; and irradiating the doped layer with a plurality of pulsed laser beams supplied by a plurality of laser irradiation devices to activate the doped layer and provide an activated doped layer. The activated doped layer may be one of a single doped layer or a plurality of successive doped layers which each have respective conduction types that are one of identical or different. Device breakage and failure of the manufactured semiconductor element due to heat induced during laser irradiation are substantially prevented by this method.
11 Citations
16 Claims
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1. A method of manufacturing a semiconductor element, comprising:
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implanting ions of a dopant having a large diffusion coefficient into a semiconductor to provide a doped layer; and irradiating the doped layer with a plurality of pulsed laser beams, and with at least one continuous laser beam, supplied by a plurality of laser irradiation devices to activate the doped layer and provide an activated doped layer that is one of a single doped layer or a plurality of successive doped layers which each have respective conduction types that are one of identical or different. - View Dependent Claims (2, 3, 4, 6, 7, 8, 9, 10, 11, 12, 13)
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5. A method of manufacturing a semiconductor element, comprising:
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implanting ions of a dopant having a large diffusion coefficient into a semiconductor to provide a doped layer; and irradiating the doped layer with laser beams (a) from one of a pulsed solid-state laser or a pulsed excimer laser, and (b) from a continuous semiconductor laser to activate the doped layer and provide an activated doped layer that is one of a single doped layer or a plurality of successive doped layers which each have respective conduction types that are one of identical or different. - View Dependent Claims (14, 15, 16)
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Specification