Test pattern of CMOS image sensor and method of measuring process management using the same
First Claim
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1. A method of measuring process management of the fabrication of a CMOS image sensor, comprising:
- forming a test pattern of a CMOS image sensor, wherein the test pattern comprises an opaque metal film pattern formed on a semiconductor substrate, an insulating film formed on the semiconductor substrate and the metal film pattern, a single-color filter formed on the insulating film, the single-color filter being only a red color filter, a planarization layer formed on the insulating film and the single-color filter, and a number of micro-lenses formed on the planarization layer; and
scanning the test pattern at a plurality of angles using a light source of short wavelength, detecting a scattered beam, and measuring the process management of the micro-lenses and the color filter.
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Abstract
The test pattern according to the present invention consists of an opaque metal film pattern formed on a semiconductor substrate, an insulating film formed on the semiconductor substrate and the metal film pattern, a red color filter formed on the insulating film, a planarization layer formed on the insulating film and the red color filter, and a number of micro-lenses formed on the planarization layer.
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Citations
8 Claims
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1. A method of measuring process management of the fabrication of a CMOS image sensor, comprising:
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forming a test pattern of a CMOS image sensor, wherein the test pattern comprises an opaque metal film pattern formed on a semiconductor substrate, an insulating film formed on the semiconductor substrate and the metal film pattern, a single-color filter formed on the insulating film, the single-color filter being only a red color filter, a planarization layer formed on the insulating film and the single-color filter, and a number of micro-lenses formed on the planarization layer; and scanning the test pattern at a plurality of angles using a light source of short wavelength, detecting a scattered beam, and measuring the process management of the micro-lenses and the color filter. - View Dependent Claims (2, 3, 4)
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5. A method for forming a test pattern of a CMOS image sensor, comprising:
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forming an opaque metal film pattern on a semiconductor substrate; forming an insulating film on the semiconductor substrate and the metal film pattern; forming a single-color filter on the insulating film, the single-color filter being only a red color filter; forming a planarization layer on the insulating film and the single-color filter; and forming a plurality of micro-lenses on the planarization layer. - View Dependent Claims (6, 7, 8)
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Specification