Wafer structure with discrete gettering material

• US 7,808,091 B2
• Filed: 03/01/2005
• Issued: 10/05/2010
• Est. Priority Date: 07/20/2001
• Status: Expired due to Fees

• Current Assignee: SAES Getters SpA (SAES Getters S)
• Original Assignee: SAES Getters SpA (SAES Getters S)
• Inventors: Amiotti, Marco
• Primary Examiner(s): Chambliss; Alonzo
• Application Number:
  US11/070,728
• Publication Number:
  US 20050156302A1
• Time in Patent Office: 2,044 Days
• Field of Search: None
• US Class Current: 257/682
• CPC Class Codes: B81C 1/00285 using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
• CPC Class Codes: C23C 14/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: G01J 5/045 Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements getter arrangements per se H01L23/26 and H01L21/3221
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 23/26 including materials for absorbing or reacting with moisture or other undesired substances , e.g. getters
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]

Abstract

The specification teaches a system for manufacturing microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In an embodiment, a system for manufacturing the devices includes efficiently integrating a getter material in multiple microdevices.

Claims

1. An article of manufacture comprising:

a wafer having a substantially planar surface and a plurality of discrete areas;

a gas absorptive material provided at said plurality of discrete areas to define discrete deposits; and

a covering layer formed over at least a portion of the substantially planar surface of the base structure and at least partially covering the absorptive material.

2. An article of manufacture as recited in claim 1 wherein the covering layer covers substantially all of the substantially planar surface of the base structure.

3. An article of manufacture as recited in claim 1 wherein the covering layer is provided with passages exposing at least a portion of the absorptive material.

4. An article of manufacture as recited in claim 1 wherein the wafer is provided with a plurality of recesses in said substantially planar surface at said plurality of discrete deposit areas.

5. An article of manufacture as recited in claim 4 wherein the wafer is a first wafer and further comprising a second wafer having a substantially planar surface, the second wafer including a plurality of microdevice base areas each of which is provided with at least one component of a microdevice, whereby when the substantially planar surface of the first wafer is engaged with the substantially planar surface of the second wafer, the at least one component of a microdevice of each of said plurality of microdevice areas is located within a cavity at least partially defined by at least one recess of the first wafer.

6. An article of manufacture as recited in claim 1 wherein the absorptive material is at least one of a getter and a drier.

7. An article of manufacture as recited in claim 1 wherein the absorptive material is formed to a thickness of between about 0.1 to 5 μ

m.

8. An article of manufacture as recited in claim 1 wherein the covering layer is formed to a thickness of between about 1 to 20 μ

m.

9. An apparatus comprising:

a base structure having a top surface and a bottom surface wherein a recess is present on said top surface of said base structure;

a getter material disposed within said recess;

at least one micro device disposed on said top surface of said base structure; and

at least one covering element that has an upper surface and a lower surface, wherein a hollow is present on said lower surface of said covering element;

wherein said covering element covers said top surface of base structure, and wherein said micro device is located in said hollow and wherein said micro device is in air contact with said getter material.

10. The apparatus of claim 9, wherein said base structure comprises a first layer and a second layer, wherein said second layer is on top of said first layer.

11. The apparatus of claim 10, wherein said second layer comprises uncut microelectronic devices.

12. The apparatus of claim 10, wherein hollows in said top surface bisected said second layer and are in proximity to said micro devices.

13. The apparatus of claim 9, wherein said micro device is a micro machine disposed on said top surface layer.

14. The apparatus of claim 9, wherein said apparatus is contained within a storage container with an inert atmosphere.

15. The apparatus of claim 9, wherein the thickness of said getter materials is from approximately 1-5 μ

m.

16. The apparatus of claim 9, wherein said getter materials selected from at least one of Zr, Ti, Nv, Ta, V and alloys made therefrom.