Determining endpoint in a substrate process

• US 7,808,651 B2
• Filed: 01/15/2010
• Issued: 10/05/2010
• Est. Priority Date: 11/01/2002
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Lian, Lei, Davis, Matthew F
• Primary Examiner(s): Lyons; Michael A
• Application Number:
  US12/688,840
• Publication Number:
  US 20100133232A1
• Time in Patent Office: 263 Days
• Field of Search: 356/497, 356/498, 356/503, 356/504, 438/14, 438/16
• US Class Current: 356/503
• CPC Class Codes: G01B 11/0675 using interferometry
• CPC Class Codes: G01B 11/0683 measurement during deposition or removal of the layer
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32963 End-point detection

Abstract

An endpoint detection system for detecting an endpoint of a process comprises a polychromatic light source which emits polychromatic light. The light is reflected from a substrate. A light wavelength selector receives the reflected polychromatic light and determines a wavelength of light at which a local intensity of the reflected light is maximized during the process. In one version, the wavelength selector comprises a diffraction grating to generate a plurality of light beams having different wavelengths from the reflected polychromatic light and a light detector to receive the light beams having different wavelengths and generate an intensity signal trace of the intensity of each wavelength of the polychromatic reflected light.

Claims

1. An endpoint detection system for detecting an endpoint of a process being performed in a substrate processing apparatus, the endpoint detection system comprising:

(a) a polychromatic light source to emit polychromatic light that is reflected from a substrate in the apparatus, the polychromatic light having a plurality of wavelengths; and

(b) a light wavelength selector to receive the reflected polychromatic light and determine a wavelength of light at which a local intensity of the reflected light is maximized during the process, the light wavelength selector comprising;

(i) a diffraction grating to generate a plurality of light beams having different wavelengths from the reflected polychromatic light; and

(ii) a light detector to receive the light beams having different wavelengths and generate an intensity signal trace of the intensity of each wavelength of the polychromatic reflected light.

2. A system according to claim 1 comprising a stepper motor to rotate the diffraction grating to generate a plurality of light beams having different wavelengths from the reflected polychromatic light.

3. A system according to claim 2 wherein the stepper motor rotates the diffraction grating along an axis that is non-orthogonal to a surface plane of the diffraction grating.

4. A system according to claim 1 further comprising a focusing assembly for focusing the polychromatic light onto the substrate.

5. A system according to claim 1 wherein the polychromatic light source comprises a xenon or Hg—

Cd lamp.

6. A system according to claim 1 comprising a controller to operate the diffraction grating to separate the reflected polychromatic light into light beams having a sequence of different wavelengths until a light beam having a wavelength of reflected light with a local maximum of intensity is detected.

7. A system according to claim 1 comprising a controller to operate a bandpass filter to filter the intensity signal trace from the light detector to detect preselected wavelengths of light.

8. A system according to claim 1 wherein the substrate comprises polysilicon exposed between features of a layer comprising a mask comprising silicon nitride, and wherein light wavelength selector is adapted to determine a wavelength of light that is from about 200 to about 800 nm.

9. A substrate etching apparatus comprising the endpoint detection system of claim 1, the apparatus comprising:

(a) a chamber comprising;

(i) a substrate support to support a substrate having a layer;

(ii) a gas distributor to introduce an etchant gas into the chamber;

(iii) a gas energizer to energize the etchant gas to etch the substrate or layer; and

(iv) a gas exhaust port; and

(b) a controller to receive and evaluate the intensity signal trace, during the etching process, to determine an endpoint of the etching process.

10. An endpoint detection system for detecting an endpoint of a process being performed in a substrate processing apparatus, the endpoint detection system comprising:

(a) a light beam source to emit polychromatic light that is reflected from a substrate in the apparatus, the polychromatic light having a plurality of wavelengths; and

(b) a light wavelength selector to receive the reflected polychromatic light and determine a wavelength of light at which a local intensity of the reflected light is maximized during the etching process, the light wavelength selector comprising;

(i) a prism to generate light beams having different wavelengths from the reflected polychromatic light; and

(ii) a light detector to receive the light beams having different wavelengths and generate an intensity signal trace of the intensity of each wavelength of the polychromatic reflected light.

11. A system according to claim 10 further comprising a focusing assembly for focusing the polychromatic light onto the substrate.

12. A system according to claim 10 wherein the light beam source comprises a xenon or Hg—

Cd lamp.

13. A system according to claim 10 comprising a controller to operate a bandpass filter to filter the intensity signal trace from the light detector to detect preselected wavelengths of light.

14. A system according to claim 10 wherein the substrate comprises polysilicon exposed between features of a layer comprising a mask comprising silicon nitride, and wherein the light wavelength selector is adapted to determine a wavelength of light that is from about 200 to about 800 nm.

15. An endpoint detection system for detecting an endpoint of a process being performed in a substrate processing apparatus, the endpoint detection system comprising:

(a) a light beam source to emit polychromatic light that is reflected from a substrate in the apparatus, the polychromatic light having a plurality of wavelengths; and

(b) a light wavelength selector to receive the reflected polychromatic light and determine a wavelength of reflected light at which a local intensity of the reflected light is maximized during the etching process, the light wavelength selector comprising;

(i) a wavelength filter to generate light beams having different wavelengths from the reflected polychromatic light; and

(ii) a light detector to receive the light beams having different wavelengths and generate an intensity signal trace of the intensity of each wavelength of the polychromatic reflected light.

16. A system according to claim 15 further comprising a focusing assembly for focusing the polychromatic light onto the substrate.

17. A system according to claim 15 wherein the light beam source comprises a xenon or Hg—

Cd lamp.

18. A system according to claim 15 comprising a controller to operate a bandpass filter to filter the intensity signal trace from the light detector to detect preselected wavelengths of light.

19. A system according to claim 15 wherein the substrate comprises polysilicon exposed between features of a layer comprising a mask comprising silicon nitride, and wherein the light wavelength selector is adapted to determine a wavelength of light that is from about 200 to about 800 nm.

20. A method of processing a substrate in a process zone, the method comprising:

(a) directing a broadband spectrum of light at a substrate in the process zone, the broadband spectrum of light having a plurality of wavelengths;

(b) separating light beams having different wavelengths from a reflectance spectrum of light reflected from the substrate which arises from the broadband spectrum of light; and

(c) determining a wavelength of light at which a local intensity of reflected light is maximized during the process.

21. A method according to claim 20 wherein (c) comprises scanning wavelengths of from about 200 to about 800 nm.

22. A method according to claim 20 wherein (b) comprises rotating a diffraction grating to separate the light beams.

23. A method according to claim 22 comprising rotating the diffraction grating along an axis that is non-orthogonal to a surface plane of the diffraction grating.

24. A method according to claim 20 comprising focusing the broadband spectrum of light.

25. A method according to claim 20 comprising directing a broadband spectrum of light from a polychromatic light source comprising a xenon or Hg—

Cd lamp.

26. A method according to claim 20 comprising processing the substrate in the process zone by exposing the substrate to an energized gas in the process zone while light having the selected wavelength is reflected from the substrate.