Method for manufacturing a magneto-resistance effect element

• US 7,810,228 B2
• Filed: 07/05/2007
• Issued: 10/12/2010
• Est. Priority Date: 07/07/2006
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Fukuzawa, Hideaki, Yuasa, Hiromi, Fuji, Yoshihiko
• Primary Examiner(s): Kim; Paul D
• Application Number:
  US11/822,435
• Publication Number:
  US 20080005891A1
• Time in Patent Office: 1,195 Days
• Field of Search: 296/030.7, 296/030.9, 2960313- 6316, 296/031.8, 216/22, 216/48, 216/62, 216/65, 216/66, 360/324.1, 360/324.11, 360/324.12, 427127-131
• US Class Current: 29/603.16
• CPC Class Codes: G11B 5/39 using magneto-resistive devices or effects
• CPC Class Codes: H10B 61/10 comprising components having two electrodes, e.g. diodes or MIM elements
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: Y10T 29/49032 Fabricating head structure or component thereof
• CPC Class Codes: Y10T 29/49041 with significant slider/housing shaping or treating
• CPC Class Codes: Y10T 29/49043 Depositing magnetic layer or coating
• CPC Class Codes: Y10T 29/49044 Plural magnetic deposition layers
• CPC Class Codes: Y10T 29/49046 with etching or machining of magnetic material
• CPC Class Codes: Y10T 29/49048 Machining magnetic material [e.g., grinding, etching, polishing]
• CPC Class Codes: Y10T 29/49052 by etching

Abstract

An example method for manufacturing a magneto-resistance effect element involves irradiating inert gas ions to enhance an adhesive force between an area around an oxide layer and a metallic layer.

Claims

1. A method for manufacturing a magneto-resistance effect element, comprising steps of:

forming a fixed magnetization layer;

forming a free magnetization layer; and

forming a spacer layer with an insulating layer and a non-magnetic metallic path penetrating through said insulating layer, comprising steps of;

forming a first non-magnetic metallic layer;

forming a metallic layer on a surface of said first non-magnetic metallic layer;

irradiating, onto said metallic layer, ions or plasma including at least one of oxygen and nitrogen and at least one selected from the group consisting of Ar, Xe, He, Ne, Kr so as to convert said metallic layer into said insulating layer and said non-magnetic metallic path containing said first non-magnetic metallic layer;

forming a second non-magnetic metallic layer on said non-magnetic metallic path; and

irradiating ions or plasma onto said fixed magnetization layer.