Semiconductor light emitting device and method for manufacturing the same
First Claim
1. A method for manufacturing a semiconductor light emitting device comprising (i) a semiconductor layer with convex portions in a shape selected from a cone and a truncated cone and (ii) electrodes, said method comprising the steps of:
- (a) growing a semiconductor layer on a substrate,(b) forming on the semiconductor layer a region having particles with an average particle diameter of 0.01 to 10 μ
m and a surface density of 2×
106 to 2×
1010 cm−
2, and(c) dry-etching the semiconductor layer to form the convex portions in the shape selected from a cone and a truncated cone,wherein the semiconductor layer is made of metal nitride, andwherein in the case of the convex portions with the shape of the truncated cone, the convex portions have a height of from 0.05 to 5.0 μ
m and a bottom base diameter of from 0.05 to 2.0 μ
m;
in case of the convex portions with the shape of the cone, the convex portions have a height of from 0.05 to 5.0 μ
m and a base diameter of from 0.05 to 2.0 μ
m.
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention provides a semiconductor light emitting device and a method for manufacturing the same. The semiconductor device comprises (i) a semiconductor layer with convex portions in a shape selected from a cone and a truncated cone and (ii) electrodes, wherein in the case of the convex portions with the shape of the truncated cone, the convex portions has a height of from 0.05 to 5.0 μm and a bottom base diameter of from 0.05 to 2.0 μm; in case of the convex portions with the shape of the cone, the convex portions has a height of from 0.05 to 5.0 μm and a base diameter of from 0.05 to 2.0 μm. A method for manufacturing a semiconductor light emitting device comprising the steps of (a) growing a semiconductor layer on a substrate, (b) forming on the semiconductor layer a region having particles with an average particle diameter of 0.01 to 10 μm and a surface density of 2×106 to 2×1010 cm−2, and (c) dry-etching the semiconductor layer to form convex portions in the shape selected from a cone and a truncated corn.
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Citations
18 Claims
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1. A method for manufacturing a semiconductor light emitting device comprising (i) a semiconductor layer with convex portions in a shape selected from a cone and a truncated cone and (ii) electrodes, said method comprising the steps of:
-
(a) growing a semiconductor layer on a substrate, (b) forming on the semiconductor layer a region having particles with an average particle diameter of 0.01 to 10 μ
m and a surface density of 2×
106 to 2×
1010 cm−
2, and(c) dry-etching the semiconductor layer to form the convex portions in the shape selected from a cone and a truncated cone, wherein the semiconductor layer is made of metal nitride, and wherein in the case of the convex portions with the shape of the truncated cone, the convex portions have a height of from 0.05 to 5.0 μ
m and a bottom base diameter of from 0.05 to 2.0 μ
m;
in case of the convex portions with the shape of the cone, the convex portions have a height of from 0.05 to 5.0 μ
m and a base diameter of from 0.05 to 2.0 μ
m. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for manufacturing a semiconductor light emitting device comprising (i) a semiconductor layer with convex portions in a shape selected from a cone and a truncated cone and (ii) electrodes, said method comprising the steps of:
-
(a) growing a semiconductor layer on a substrate, (b) forming on the semiconductor layer a region having particles with an average particle diameter of 0.01 to 10 μ
m and a surface density of 2×
106 to 2×
1010 cm−
2, and(c) dry-etching the semiconductor layer to form the convex portions in the shape selected from a cone and a truncated cone, wherein the dry etching is carried out until the maximum diameter of the particles is not more than 80% of the average particle diameter of the particles before dry-etching in a direction parallel to the surface of the substrate, and wherein in the case of the convex portions with the shape of the truncated cone, the convex portions have a height of from 0.05 to 5.0 μ
m and a bottom base diameter of from 0.05 to 2.0 μ
m;
in case of the convex portions with the shape of the cone, the convex portions have a height of from 0.05 to 5.0 μ
m and a base diameter of from 0.05 to 2.0 μ
m.
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15. A method for manufacturing a semiconductor light emitting device comprising (i) a semiconductor layer with convex portions in a shape selected from a cone and a truncated cone and (ii) electrodes, said method comprising the steps of:
-
(a) growing a semiconductor layer on a substrate, (b) forming on the semiconductor layer a region having particles with an average particle diameter of 0.01 to 10 μ
m and a surface density of 2×
106 to 2×
1010 cm−
2, and(c) dry-etching the semiconductor layer to form the convex portions in the shape selected from a cone and a truncated cone, wherein the substrate is made of at least one selected from the group consisting of sapphire, SiC, Si, MgAl2O4, LiTaO3, ZrB2, CrB2, and gallium nitride, and wherein in the case of the convex portions with the shape of the truncated cone, the convex portions have a height of from 0.05 to 5.0 μ
m and a bottom base diameter of from 0.05 to 2.0 μ
m;
in case of the convex portions with the shape of the cone, the convex portions have a height of from 0.05 to 5.0 μ
m and a base diameter of from 0.05 to 2.0 μ
m.
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16. A semiconductor device comprising (i) a semiconductor layer with convex portions in a shape selected from a cone and a truncated cone and (ii) electrodes,
wherein in the case of the convex portions with the shape of the truncated cone, the convex portions have a height of from 0.05 to 5.0 μ - m and a bottom base diameter of from 0.05 to 2.0 μ
m;
in case of the convex portions with the shape of the cone, the convex portions have a height of from 0.05 to 5.0 μ
m and a base diameter of from 0.05 to 2.0 μ
m, andwherein when the vertex of the individual convex portions of the semiconductor layer is divided in a direction perpendicular to a light output surface, a line showing the outer edge of the cross section of the convex portions have at least two curved portions and a radius of curvature of the curved portions on the base side of the convex portions be larger than the curved portion on their vertex side. - View Dependent Claims (17, 18)
- m and a bottom base diameter of from 0.05 to 2.0 μ
Specification