Method for fabricating electronic and photonic devices on a semiconductor substrate
First Claim
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1. A method for fabricating integrated circuits, said method comprising:
- providing a substrate having an epi layer, an oxide layer, and a nitride layer sequentially formed thereon;
patterning and etching said epi layer, said oxide layer and said nitride layer to form a plurality of pre-slabs on said substrate;
selectively forming a waveguide resist (WGR) mask on one of said pre-slabs to assist a formation of a modulator;
etching said epi layer further to form a plurality of slabs, wherein said etching is performed by using said WGR mask on said one pre-slab and by using said nitride layer on said remaining pre-slabs as a hard mask;
removing said WGR mask from said substrate, wherein said nitride layer is located directly above said modulator having a thickness that is greater than the thickness of said nitride layer on remaining slabs;
growing an oxide layer on sidewalls of said slabs; and
fabricating an electronic device on a first one of said slabs and a photonic device on a second one of said slabs, such that said electronic and photonic devices are formed on said substrate.
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Abstract
A method for fabricating photonic and electronic devices on a substrate is disclosed. Multiple slabs are initially patterned and etched on a layer of a substrate. An electronic device is fabricated on a first one of the slabs and a photonic device is fabricated on a second one of the slabs, such that the electronic device and the photonic device are formed on the same layer of the substrate.
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Citations
11 Claims
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1. A method for fabricating integrated circuits, said method comprising:
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providing a substrate having an epi layer, an oxide layer, and a nitride layer sequentially formed thereon; patterning and etching said epi layer, said oxide layer and said nitride layer to form a plurality of pre-slabs on said substrate; selectively forming a waveguide resist (WGR) mask on one of said pre-slabs to assist a formation of a modulator; etching said epi layer further to form a plurality of slabs, wherein said etching is performed by using said WGR mask on said one pre-slab and by using said nitride layer on said remaining pre-slabs as a hard mask; removing said WGR mask from said substrate, wherein said nitride layer is located directly above said modulator having a thickness that is greater than the thickness of said nitride layer on remaining slabs; growing an oxide layer on sidewalls of said slabs; and fabricating an electronic device on a first one of said slabs and a photonic device on a second one of said slabs, such that said electronic and photonic devices are formed on said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification