Radiation detecting apparatus, radiation imaging apparatus and radiation imaging system

• US 7,812,317 B2
• Filed: 09/05/2008
• Issued: 10/12/2010
• Est. Priority Date: 08/31/2005
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Mochizuki, Chiori, Ishii, Takamasa, Watanabe, Minoru, Nomura, Keiichi
• Primary Examiner(s): Porta; David P
• Assistant Examiner(s): BOOSALIS, FANI POLYZOS
• Application Number:
  US12/205,280
• Publication Number:
  US 20090004768A1
• Time in Patent Office: 767 Days
• Field of Search: 250/370.09, 250/370.11, 250/370.14, 257/E27.132, 257/E27.146, 438/64, 438/149, 438/151
• US Class Current: 250/370.14
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14659 Direct radiation imagers structures
• CPC Class Codes: H01L 27/14663 Indirect radiation imagers, e.g. using luminescent members
• CPC Class Codes: H01L 27/14692 Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon

Abstract

A radiation detecting apparatus according to the present invention includes: pixels including switching elements arranged on an insulating substrate and conversion elements arranged on the switching elements to convert a radiation into electric carriers, the switching elements and the conversion elements are connected with each other, the pixels two-dimensionally arranged on the insulating substrate in a matrix; gate wiring commonly connected with a plurality of switching elements arranged in a row direction on the insulating substrate; signal wiring commonly connected with a plurality of switching elements arranged in a column direction; and a plurality of insulating films arranged between the switching elements and the conversion elements, wherein at least one of the gate wiring and the signal wiring is arranged to be put between the plurality of insulating films.

Claims

1. A manufacturing method of a radiation detecting apparatus, comprising the steps of:

forming a plurality of switching elements arranged two-dimensionally on an insulating substrate, and each having first and second electrodes and a gate electrode;

forming a first insulating film covering the plurality of switching elements;

forming a through-hole in the first insulating film;

forming, on the first insulating film having the through-hole, a signal wiring for connecting each of the switching elements arranged along a first direction or a gate wiring for connecting each of the switching elements arranged along a second direction;

forming a second insulating film covering the first insulating film and also covering either the signal wiring or the gate wiring; and

forming a plurality of conversion elements each connected electrically correspondingly to a respective one of the switching elements, after formation of the second insulating film.

2. The manufacturing method of a radiation detecting apparatus according to claim 1, wherein one of the signal wiring and the gate wiring is formed on the first insulating film, and the method further comprises steps of:

forming a through-hole in the second insulating film;

forming, on the second insulating film having the through-hole, the other of the signal wiring and the gate wiring on the first insulating film; and

forming a third insulating film covering the second insulating film and also covering either the signal wiring or the gate wiring.

3. The manufacturing method of a radiation detecting apparatus according to claim 2, wherein each of the first to third insulating films has a thickness of 1-10 μ

m.

4. The manufacturing method of a radiation detecting apparatus according to claim 1, wherein a total thickness of the first and second insulating films is 2-20 μ

m.

5. The manufacturing method of a radiation detecting apparatus according to claim 1, wherein the second insulating film has an end that is formed inside of an end of the first insulating film, such that total thickness of the insulating films changes in a step shape.

6. The manufacturing method of a radiation detecting apparatus according to claim 1, wherein each of the switching elements is a transfer switching element for transferring an electric charge based on radiation conversion by the conversion element, and the method further comprises a step of forming a reset switching element coupled with the transfer switching element, simultaneously with the step of forming the transfer switching element.

7. The manufacturing method of a radiation detecting apparatus according to claim 1, wherein each of the conversion elements is a photoelectric conversion element, and the method further comprises a step of forming, on each of the conversion elements, a wavelength converter for converting radiation into light.

8. The manufacturing method of a radiation detecting apparatus according to claim 1, wherein the conversion elements convert radiation directly into electric charge.

9. The manufacturing method of a radiation detecting apparatus according to claim 1, further comprising a step of connecting electrically a signal processing circuit to the signal wiring.