Power semiconductor module for inverter circuit system

• US 7,812,443 B2
• Filed: 04/01/2008
• Issued: 10/12/2010
• Est. Priority Date: 04/02/2007
• Status: Active Grant

• Current Assignee: Hitachi Astemo Ltd. (Hitachi, Ltd.)
• Original Assignee: Hitachi, Ltd.
• Inventors: Saito, Ryuichi, Nakatsu, Kinya, Tokuyama, Takeshi
• Primary Examiner(s): Pham; Thanh V
• Application Number:
  US12/060,629
• Publication Number:
  US 20080251909A1
• Time in Patent Office: 924 Days
• Field of Search: 257/706, 257/717, 257/720, 257/796, 257/E23.051, 257/E23.104, 438/122
• US Class Current: 257/706
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/115 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/30107 Inductance
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H02M 7/81 arranged for operation in parallel
• CPC Class Codes: H05K 7/20927 Liquid coolant without phase change

Abstract

A double-face-cooled semiconductor module with an upper arm and a lower arm of an inverter circuit includes first and second heat dissipation members, each having a heat dissipation surface on one side and a conducting member formed on another side through an insulation member. On the conducting member on the first dissipation plate is provided with a fixing portion that fixes a collector surface of the semiconductor chip and a gate conductor connected to a gate terminal of the semiconductor module. The gate electrode terminal and the gate conductor are wire bonded. The conducting member on the second heat dissipation member is connected to an emitter surface of the semiconductor chip connected to the first heat dissipation member. The productivity and reliability are improved by most of formation operations for the upper and lower arms series circuit on one of the heat dissipation member.

Claims

1. A double-face-cooled semiconductor module having incorporated therein an upper and lower arms series circuit of an inverter circuit, comprising:

a first and a second heat dissipation members each having a heat dissipation surface on one side and a conducting member formed on another side through an insulation member, the first and the second dissipation plates disposed with the heat dissipation surfaces thereof facing each other;

a fixing portion provided on the heat dissipation surface of the first heat dissipation member that fixes collector surfaces of semiconductor chips of the upper and lower arms of the semiconductor module, and a gate conductor connected to a gate terminal of the semiconductor module provided on the conductor formed on the first heat dissipation member;

the gate electrode terminal of the semiconductor chip and the gate conductor being electrically connected to each other; and

the conducting member formed on the second heat dissipation member being connected to an emitter surface of the semiconductor chip fixed to the first heat dissipation member.

2. The semiconductor module according to claim 1, wherein

the fixing conducting member and the gate conductor provided on the conducting member on the first heat dissipation member have the same height as seen from the first heat dissipation member, and

the gate electrode terminal provided on an emitter surface side of the semiconductor chip and the gate conductor are electrically connected through wire bonding.

3. The semiconductor module according to claim 1, wherein

the conducting member provided on the first heat dissipation member through an insulating member includes a fixing portion that fixes a collector surface of the semiconductor chip and the gate conductor by cutting,

the fixing portion and the gate conductor are both convex and soldered to the collector surface of the semiconductor chip arranged opposite to the fixing portion, and

a gate electrode terminal provided on the soldered emitter surface side of the semiconductor chip and the gate conductor are wire bonded to each other.

4. The semiconductor module according to claim 1, wherein

the conducting member provided with the fixing portion that fixes the collector surface is provided so as to extend as a direct current positive electrode terminal of the semiconductor module,

the conducting member provided with the gate conductor electrically connected to the gate electrode terminal of the semiconductor chip is provided so as to extend as a gate terminal of the semiconductor module,

the conducting member provided on the second heat dissipation member connected to the emitter surface of the semiconductor chip of the lower arm is provided so as to extend as a direct current negative electrode terminal of the semiconductor module, and

the current positive electrode terminal and the direct current negative electrode terminal are arranged facing each other.

5. A double-face-cooled semiconductor module having incorporated therein an upper m and lower arms series circuit of an inverter circuit, comprising:

a first and a second heat dissipation members each having a heat dissipation surface on one side and a conducting member formed on another side through an insulation member, the first and the second dissipation plates disposed with the heat dissipation surfaces thereof facing each other;

a fixing portion provided on the heat dissipation surface of the first heat dissipation member that fixes collector surfaces of semiconductor chips of the upper and lower arms of the semiconductor module, and a gate conductor connected to a gate terminal of the semiconductor module provided on the conductor formed on the first heat dissipation member;

the gate electrode terminal of the semiconductor chip and the gate conductor being electrically connected to each other;

the conducting member formed on the second heat dissipation member being connected to an emitter surface of the semiconductor chip fixed to the first heat dissipation member; and

a bottom case of a concave shape to sandwich and fix the first and the second heat dissipation members therein, a side case of a convex shape to be inserted between the first and the second heat dissipation members to fix the first and the second heat dissipation members, and a top case in the form of an insertion hole to sandwich and fix the first and the second heat dissipation members from above.

6. The semiconductor module according to claim 5, wherein

the direct current positive electrode terminal, the direct current negative electrode terminal, the gate terminal, and the alternate current terminal of the semiconductor module are provided so as to protrude from the top case through the insertion hole, and

a mold resin is filled in an inner space defined by the first and the second heat dissipation members facing each other though the insertion hole.

7. A semiconductor module comprising:

a first heat dissipation metal plate of a substantially tetragonal shape, one side of the first heat dissipation metal plate being a heat dissipation surface;

a second heat dissipation metal plate of a substantially tetragonal shape, one side of the second heat dissipation metal plate being a heat dissipation surface;

a first conducting member and a second conducting member fixed to another side of the first heat dissipation metal plate through an insulation member;

a first IGBT chip whose collector is connected to the first conducting member;

a first diode chip whose cathode is connected to the first conducting member;

a second IGBT chip whose collector is connected to the second conducting member;

a second diode chip whose cathode is connected to the second conducting member;

a third conducting member connected to the other side of the second heat dissipation metal plate through an insulating member, connected to the emitter of the first IGBT chip and the anode of the first diode chip;

a fourth conducting member connected to the other side of the second heat dissipation metal plate through an insulating member, connected to the emitter of the second IGBT chip and the anode of the first diode chip, wherein

the other side of the first heat dissipation metal plate and the other side of the second heat dissipation metal plate are arranged facing each other,

the third conducting member fixed to the other side of the second heat dissipation metal plate is arranged opposite to the first conducting member,

the fourth conducting member fixed to the other side of the second heat dissipation metal plate is arranged opposite to the second conducting member,

the first IGBT chip and the first diode chip are arranged between the third conducting member and the first conducting member facing to each other, and the second IGBT chip and the second diode chip are arranged between the fourth conducting member and the second conducting member facing to each other,

a positive electrode terminal for direct current, a negative electrode terminal for direct current, an alternate current terminal, a first signal terminal, and a second signal terminal are arranged on one side of the first heat dissipation metal plate and the second heat dissipation metal plate arranged facing each other so as to extend therebetween and outward,

the positive electrode terminal for direct current and the first conducting member are electrically connected to each other, the negative electrode terminal for direct current and the fourth conducting member are electrically connected to each other, the alternate current terminal and the second conducting member are electrically connected to each other, the second conducting member and the third conducting member are electrically connected to each other, and the first and the second signal terminals are electrically connected to the respective gate electrodes of the first and the second IGBT chips.

8. The semiconductor module according to claim 7, wherein

the semiconductor module further includes a first side case and a second side case, wherein

the first and the second IGBT chips and the first and the second diode chips are held in a hermetically sealed state between the first heat dissipation metal plate and the second heat dissipation metal plate by the first heat dissipation metal plate and the second heat dissipation metal plates, and the first and the second side cases.

9. The semiconductor module according to claim 7, wherein

the positive electrode terminal for direct current and the first conducting member are made of an integral metal plate, and the negative electrode terminal and the fourth conducting member are made of an integral metal plate.

10. The semiconductor module according to claim 9, wherein

the integral metal plate constituted by the positive electrode terminal for direct current and the first conducting member has a portion positioned from between the first heat dissipation metal plate and the second heat dissipation metal plate arranged facing each other, the portion bent in a direction away from the second heat dissipation metal plate, and

the integral metal plate constituted by the negative electrode terminal for direct current and the fourth conducting member has a portion positioned from between the first heat dissipation metal plate and the second heat dissipation metal plate arranged facing each other, the portion bent in a direction away from the first heat dissipation metal plate.

11. The semiconductor module according to claim 7, wherein

the alternate current terminal and the third conducting member is made of an integral metal plate.

12. The semiconductor module according to claim 7, wherein

the semiconductor module further includes a first signal conductor and a second signal conductor that are integral with the first and the second signal terminals, respectively, the first and the second signal conductors fixed to the other side of the first heat dissipation metal plate through the insulation member, and

the first and the second signal conductors are electrically connected to the gate electrodes of the first and the second IGBT chips, respectively, through wire bonding.

13. A semiconductor module comprising:

a first heat dissipation metal plate and a second heat dissipation metal plate each having a substantially tetragonal shape with an upper side and a lower side, and a first lateral side and a second lateral side positioned on both sides of the upper and the lower sides, respectively, with one surface of each of the first and the second heat dissipation metal plates being a heat dissipation surface;

a first conducting member and a second conducting member fixed to the other surface of the first heat dissipation metal plate on the upper side and the lower side, respectively, through an insulation member;

a first IGBT chip whose collector is connected to the first conducting member;

a first diode chip whose cathode is connected to the first conducting member;

a second IGBT chip whose collector is connected to the second conducting member;

a second diode chip whose cathode is connected to the second conducting member;

a third conducting member connected to the other surface of the second heat dissipation metal plate through an insulating member, connected to the emitter of the first IGBT chip and the anode of the first diode chip; and

a fourth conducting member connected to the other side of the second heat dissipation metal plate through an insulating member, connected to the emitter of the second IGBT chip and the anode of the first diode chip, wherein

the other surface of the first heat dissipation metal plate and the other surface of the second heat dissipation metal plate are arranged facing each other,

the third conducting member fixed to the other surface of the second heat dissipation metal plate is arranged on the upper side opposite to the first conducting member,

the fourth conducting member fixed to the other surface of the second heat dissipation metal plate is arranged on the upper side opposite to the second conducting member,

the first IGBT chip and the first diode chip are arranged between the third conducting member and the first conducting member facing each other, and the second IGBT chip and the second diode chip are arranged between the fourth conducting member and the second conducting member facing each other,

a first direct current terminal, a second direct current terminal, an alternate current terminal, a first signal terminal, and a second signal terminal are arranged on one side of the first heat dissipation metal plate and the second heat dissipation metal plate arranged facing each other outside the first and the second heat dissipation metal plates, and

the first direct current terminal and the first conducting member are electrically connected to each other, the second direct current terminal and the fourth conducting member are electrically connected to each other, the alternate current terminal and the second conducting member are electrically connected to each other, the second conducting member and the third conducting member are electrically connected to each other, and the first and the second signal terminals are electrically connected to the respective gate electrodes of the first and the second IGBT chips.

14. The semiconductor module according to claim 13, wherein

the first and the second direct current terminals are arranged facing each other at a position outside of the upper side of the first and the second heat dissipation metal plates and on the first side, and

the alternate current terminal is arranged facing each other at a position outside of the upper side of the first and closer to the second side than a position between the first and the second direct current terminals.

15. The semiconductor module according to claim 14, wherein

the first direct current terminal and the first conducting member are made of an integral metal plate, and the second direct current terminal and the fourth conducting member are made of an integral metal plate.

16. The semiconductor module according to claim 15, wherein

the integral metal plate constituted by the first direct current and the first conducting member has a portion positioned from between the first heat dissipation metal plate and the second heat dissipation metal plate arranged facing each other, the portion bent in a direction away from the second heat dissipation metal plate, and

the integral metal plate constituted by the second direct current terminal and the fourth conducting member has a portion positioned from between the first heat dissipation metal plate and the second heat dissipation metal plate arranged facing each other, the portion bent in a direction away from the first heat dissipation metal plate.

17. The semiconductor module according to claim 13, wherein

the heat dissipation fin provided on one surface of each of the first and the second heat dissipation metal plates has a concavo-convex shape on the upper side of each of the first and the second heat dissipation metal plates.

18. A semiconductor module comprising:

a first heat dissipation metal plate and a second heat dissipation metal plate each having a substantially tetragonal shape with an upper side and a lower side, and a first lateral side and a second lateral side positioned on both sides of the upper and the lower sides, respectively, with a one surface of each of the first and the second heat dissipation metal plates being a heat dissipation surface;

a first conducting member fixed to the other surface of the first heat dissipation metal plate on the upper side and the lower side, respectively, through an insulation member;

a first IGBT chip whose collector is connected to the first conducting member;

a first diode chip whose cathode is connected to the first conducting member;

a second conducting member fixed to another side of the second heat dissipation metal plate through an insulation member and connected to an emitter of the IGBT chip and an anode of the diode chip;

the other side of the first IGBT chip and the other side of the second heat dissipation metal plate arranged facing each other;

the IGBT chip and the diode chip arranged between the second and the first conducting members facing each other; and

a first terminal, a second terminal, and a signal terminal arranged on the side of the first and the second heat dissipation metal plates outside thereof, wherein

a signal conductor is fixed to the other side of the first heat dissipation metal plate, and

the first terminal and the first conducting member are electrically connected to each other, the second terminal and the second conducting member are electrically connected to each other, the signal terminal is electrically connected to the signal conductor, the signal conductor is connected to a gate electrode, the IGBT chip through wire bonding, and the IGBT chip and the diode chip sandwiched by the first and the second heat dissipation metal plates are hermetically sealed therearound.

19. The semiconductor module according to claim 18, wherein

the first terminal and the first conducting member are made of an integral metal plate, the second terminal and the fourth conducting member are made of an integral metal plate, and the signal terminal and the signal conductor are made of an integral metal plate, and

the first and the second heat dissipation metal plates have each a concavo-convex shape parallel to each upper side.

20. The semiconductor module according to claim 18, wherein

the heat dissipation fin provided on one surface of each of the first and the second heat dissipation metal plates has a concavo-convex shape parallel to the upper side of each of the first and the second heat dissipation metal plates.