Sample analysis apparatus and analysis method
First Claim
1. A sample analysis apparatus, comprising:
- i) a light beam irradiating optical system associated with a dielectric material member having a surface, on which a thin film layer has been formed, a sample being capable of being brought into contact with a surface of the thin film layer,the light beam irradiating optical system producing a light beam and irradiating the light beam to an interface between the dielectric material member and the thin film layer in a first state, in which the sample is absent on the surface of the thin film layer, and irradiating the light beam to the interface between the dielectric material member and the thin film layer in a second state, in which the sample has been brought into contact with the surface of the thin film layer,the light beam, which is produced by the light beam irradiating optical system, being constituted of light beam components, which have various different incidence angles with respect to the interface between the dielectric material member and the thin film layer, and which have intensities varying in accordance with the incidence angles with respect to the interface;
ii) a single measuring detector for outputting a first measurement signal, which represents an intensity of an entire area of light irradiated in the first state received by the measuring detector and for outputting a second measurement signal, which represents an intensity of an entire area of the light irradiated in the second state received by the measuring detector, the measuring detector being secured and located such that the measuring detector is capable of receiving the light beam, which has been reflected from the interface between the dielectric material member and the thin film layer; and
iii) a calculating means for calculating an incidence angle of a light beam component among the light beam components constituting the light beam, which light beam component has been subjected to attenuated total reflection, in accordance with a value of a difference signal representing a difference between the first measurement signal and the second measurement signal, the thus specified incidence angle being taken as the attenuated total reflection angle of the sample.
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Accused Products
Abstract
A light beam irradiating optical system is associated with a dielectric material member having a surface, on which a thin film layer has been formed, a sample being brought into contact with a surface of the thin film layer. The light beam irradiating optical system produces and irradiates a light beam to an interface between the dielectric material member and the thin film layer. The light beam is constituted of light beam components, which have various different incidence angles with respect to the interface, and which have intensities varying in accordance with the incidence angles. A single measuring detector for outputting a signal representing an intensity of an entire area of received light is secured and located so as to receive the light beam having been reflected from the interface.
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Citations
26 Claims
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1. A sample analysis apparatus, comprising:
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i) a light beam irradiating optical system associated with a dielectric material member having a surface, on which a thin film layer has been formed, a sample being capable of being brought into contact with a surface of the thin film layer, the light beam irradiating optical system producing a light beam and irradiating the light beam to an interface between the dielectric material member and the thin film layer in a first state, in which the sample is absent on the surface of the thin film layer, and irradiating the light beam to the interface between the dielectric material member and the thin film layer in a second state, in which the sample has been brought into contact with the surface of the thin film layer, the light beam, which is produced by the light beam irradiating optical system, being constituted of light beam components, which have various different incidence angles with respect to the interface between the dielectric material member and the thin film layer, and which have intensities varying in accordance with the incidence angles with respect to the interface; ii) a single measuring detector for outputting a first measurement signal, which represents an intensity of an entire area of light irradiated in the first state received by the measuring detector and for outputting a second measurement signal, which represents an intensity of an entire area of the light irradiated in the second state received by the measuring detector, the measuring detector being secured and located such that the measuring detector is capable of receiving the light beam, which has been reflected from the interface between the dielectric material member and the thin film layer; and iii) a calculating means for calculating an incidence angle of a light beam component among the light beam components constituting the light beam, which light beam component has been subjected to attenuated total reflection, in accordance with a value of a difference signal representing a difference between the first measurement signal and the second measurement signal, the thus specified incidence angle being taken as the attenuated total reflection angle of the sample. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 19, 20, 22, 23, 24)
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16. An analysis method, wherein an attenuated total reflection angle of a sample is measured by use of a sample analysis apparatus comprising:
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i) a light beam irradiating optical system associated with a dielectric material member having a surface, on which a thin film layer has been formed, the sample being capable of being brought into contact with a surface of the thin film layer, the light beam irradiating optical system producing a light beam and irradiating the light beam to an interface between the dielectric material member and the thin film layer, the light beam, which is produced by the light beam irradiating optical system, being constituted of light beam components, which have various different incidence angles with respect to the interface between the dielectric material member and the thin film layer, and which have intensities varying in accordance with the incidence angles with respect to the interface, and ii) a single measuring detector for outputting a signal, which represents an intensity of an entire area of light received by the measuring detector, the measuring detector being secured and located such that the measuring detector is capable of receiving the light beam, which has been reflected from the interface between the dielectric material member and the thin film layer, the method comprising the steps of; a) irradiating the light beam from the light beam irradiating optical system to the interface between the dielectric material member and the thin film layer in a state, in which the sample is absent on the surface of the thin film layer, a first measurement signal, which represents the intensity of the entire area of the light received by the measuring detector, being thereby obtained, b) irradiating the light beam from the light beam irradiating optical system to the interface between the dielectric material member and the thin film layer in a state, in which the sample has been brought into contact with the surface of the thin film layer, a second measurement signal, which represents the intensity of the entire area of the light received by the measuring detector, being thereby obtained, and c) specifying an incidence angle of a light beam component among the light beam components constituting the light beam, which light beam component has been subjected to attenuated total reflection, in accordance with a value of a difference signal representing a difference between the first measurement signal and the second measurement signal, the thus specified incidence angle being taken as the attenuated total reflection angle of the sample. - View Dependent Claims (21)
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17. An analysis method, wherein an attenuated total reflection angle of a sample is measured by use of a sample analysis apparatus comprising:
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i) a light beam irradiating optical system associated with a dielectric material member having a surface, on which a thin film layer has been formed, the sample being capable of being brought into contact with a surface of the thin film layer, the light beam irradiating optical system producing a light beam and irradiating the light beam to an interface between the dielectric material member and the thin film layer, the light beam, which is produced by the light beam irradiating optical system, being constituted of light beam components, which have various different incidence angles with respect to the interface between the dielectric material member and the thin film layer, and which have intensities varying in accordance with the incidence angles with respect to the interface, the light beam irradiating optical system producing the light beam by producing a beam, which has a Gaussian beam cross-sectional intensity distribution in a plane parallel with an incidence plane of a middle beam of the light beam with respect to the interface between the dielectric material member and the thin film layer, and converging or diverging the beam toward the interface between the dielectric material member and the thin film layer, ii) a single measuring detector for outputting a signal, which represents an intensity of an entire area of light received by the measuring detector, the measuring detector being secured and located such that the measuring detector is capable of receiving only a region of the light beam having been reflected from the interface between the dielectric material member and the thin film layer, which region corresponds to one side of the Gaussian beam cross-sectional intensity distribution, and iii) a light intensity monitoring detector for detecting an intensity of the whole or part of a remaining region of the light beam having been reflected from the interface between the dielectric material member and the thin film layer, which remaining region is other than the region received by the measuring detector, the method comprising the steps of; a) irradiating the light beam from the light beam irradiating optical system to the interface between the dielectric material member and the thin film layer in a state, in which the sample is absent on the surface of the thin film layer, a first measurement signal, which represents the intensity of the entire area of the light received by the measuring detector, and a first monitoring signal, which represents the intensity of the entire area of the light received by the light intensity monitoring detector, being thereby obtained, b) irradiating the light beam from the light beam irradiating optical system to the interface between the dielectric material member and the thin film layer in a state, in which the sample has been brought into contact with the surface of the thin film layer, a second measurement signal, which represents the intensity of the entire area of the light received by the measuring detector, and a second monitoring signal, which represents the intensity of the entire area of the light received by the light intensity monitoring detector, being thereby obtained, and c) specifying an incidence angle of a light beam component among the light beam components constituting the light beam, which light beam component has been subjected to attenuated total reflection, in accordance with a value of a difference signal representing a difference between a signal, which is obtained from a division of the first measurement signal by the first monitoring signal, and a signal, which is obtained from a division of the second measurement signal by the second monitoring signal, the thus specified incidence angle being taken as the attenuated total reflection angle of the sample.
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18. An analysis method, wherein an attenuated total reflection angle of a sample is measured by use of a sample analysis apparatus comprising:
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i) a light beam irradiating optical system associated with a dielectric material member having a surface, on which a thin film layer has been formed, the sample being capable of being brought into contact with a surface of the thin film layer, the light beam irradiating optical system producing a light beam and irradiating the light beam to an interface between the dielectric material member and the thin film layer, the light beam, which is produced by the light beam irradiating optical system, being constituted of light beam components, which have various different incidence angles with respect to the interface between the dielectric material member and the thin film layer, and which have intensities varying in accordance with the incidence angles with respect to the interface, the light beam, which is produced by the light beam irradiating optical system, being constituted of a first polarized light beam and a second polarized light beam, which are mixed together in a predetermined ratio, ii) a polarization beam splitter for splitting the light beam, which has been reflected from the interface between the dielectric material member and the thin film layer, into the first polarized light beam and the second polarized light beam, iii) a single measuring detector for outputting a signal, which represents an intensity of an entire area of light received by the measuring detector, the measuring detector being secured and located such that the measuring detector is capable of receiving only the first polarized light beam, and iv) a light intensity monitoring detector for detecting an intensity of the whole or part of the second polarized light beam, the method comprising the steps of; a) irradiating the light beam from the light beam irradiating optical system to the interface between the dielectric material member and the thin film layer in a state, in which the sample is absent on the surface of the thin film layer, a first measurement signal, which represents the intensity of the entire area of the light received by the measuring detector, and a first monitoring signal, which represents the intensity of the entire area of the light received by the light intensity monitoring detector, being thereby obtained, b) irradiating the light beam from the light beam irradiating optical system to the interface between the dielectric material member and the thin film layer in a state, in which the sample has been brought into contact with the surface of the thin film layer, a second measurement signal, which represents the intensity of the entire area of the light received by the measuring detector, and a second monitoring signal, which represents the intensity of the entire area of the light received by the light intensity monitoring detector, being thereby obtained, and c) specifying an incidence angle of a light beam component among the light beam components constituting the light beam, which light beam component has been subjected to attenuated total reflection, in accordance with a value of a difference signal representing a difference between a signal, which is obtained from a division of the first measurement signal by the first monitoring signal, and a signal, which is obtained from a division of the second measurement signal by the second monitoring signal, the thus specified incidence angle being taken as the attenuated total reflection angle of the sample.
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25. A sample analysis apparatus, comprising:
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i) a light beam irradiating optical system associated with a dielectric material member having a surface, on which a thin film layer has been formed, the sample being capable of being brought into contact with a surface of the thin film layer, the light beam irradiating optical system producing a light beam and irradiating the light beam to an interface between the dielectric material member and the thin film layer in a first state, in which the sample is absent on the surface of the thin film layer, and irradiating the light beam to the interface between the dielectric material member and the thin film layer in a second state, in which the sample has been brought into contact with the surface of the thin film layer, the light beam, which is produced by the light beam irradiating optical system, being constituted of light beam components, which have various different incidence angles with respect to the interface between the dielectric material member and the thin film layer, and which have intensities varying in accordance with the incidence angles with respect to the interface, the light beam irradiating optical system producing the light beam by producing a beam, which has a Gaussian beam cross-sectional intensity distribution in a plane parallel with an incidence plane of a middle beam of the light beam with respect to the interface between the dielectric material member and the thin film layer, and converging or diverging the beam toward the interface between the dielectric material member and the thin film layer, ii) a single measuring detector for outputting a first measurement signal, which represents an intensity of an entire area of light irradiated in the first state received by the measuring detector and for outputting a second measurement signal, which represents an intensity of an entire area of the light irradiated in the second state received by the measuring detector, the measuring detector being secured and located such that the measuring detector is capable of receiving only a region of the light beam having been reflected from the interface between the dielectric material member and the thin film layer, which region corresponds to one side of the Gaussian beam cross-sectional intensity distribution, and iii) a light intensity monitoring detector for detecting a first monitoring signal, which represents an intensity of an entire area of light irradiated in the first state received by the light intensity monitoring detector and for outputting a second monitoring signal, which represents an intensity of an entire area of light irradiated in the second state received by the light intensity monitoring detector; and iv) a calculating means for calculating an incidence angle of a light beam component among the light beam components constituting the light beam, which light beam component has been subjected to attenuated total reflection, in accordance with a value of a difference signal representing a difference between a signal, which is obtained from a division of the first measurement signal by the first monitoring signal, and a signal, which is obtained from a division of the second measurement signal by the second monitoring signal, the thus specified incidence angle being taken as the attenuated total reflection angle of the sample.
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26. A sample analysis apparatus, comprising:
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i) a light beam irradiating optical system associated with a dielectric material member having a surface, on which a thin film layer has been formed, the sample being capable of being brought into contact with a surface of the thin film layer, the light beam irradiating optical system producing a light beam and irradiating the light beam to an interface between the dielectric material member and the thin film layer in a first state, in which the sample is absent on the surface of the thin film layer, and irradiating the light beam to the interface between the dielectric material member and the thin film layer in a second state, in which the sample has been brought into contact with the surface of the thin film layer, the light beam, which is produced by the light beam irradiating optical system, being constituted of light beam components, which have various different incidence angles with respect to the interface between the dielectric material member and the thin film layer, and which have intensities varying in accordance with the incidence angles with respect to the interface, the light beam, which is produced by the light beam irradiating optical system, being constituted of a first polarized light beam and a second polarized light beam, which are mixed together in a predetermined ratio, ii) a polarization beam splitter for splitting the light beam, which has been reflected from the interface between the dielectric material member and the thin film layer, into the first polarized light beam and the second polarized light beam, iii) a single measuring detector for outputting a first measurement signal, which represents an intensity of an entire area of light irradiated in the first state received by the measuring detector and for outputting a second measurement signal, which represents an intensity of an entire area of the light irradiated in the second state received by the measuring detector, the measuring detector being secured and located such that the measuring detector is capable of receiving only the first polarized light beam, iv) a light intensity monitoring detector for detecting a first monitoring signal, which represents an intensity of a whole or a part of the second polarized light beam irradiated in the first state received by the light intensity monitoring detector and for outputting a second monitoring signal, which represents an intensity of a whole or a part of the second polarized light beam irradiated in the second state received by the light intensity monitoring detector; and v) a calculating means for calculating an incidence angle of a light beam component among the light beam components constituting the light beam, which light beam component has been subjected to attenuated total reflection, in accordance with a value of a difference signal representing a difference between a signal, which is obtained from a division of the first measurement signal by the first monitoring signal, and a signal, which is obtained from a division of the second measurement signal by the second monitoring signal, the thus specified incidence angle being taken as the attenuated total reflection angle of the sample.
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Specification