Method of manufacturing composite wafer structure
First Claim
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1. A method of manufacturing a composite wafer structure, comprising the steps of:
- (a) preparing a device wafer having a first circumference, a bond surface and a bottom surface;
(b) forming a groove on the bond surface along the first circumference of the device wafer, wherein a margin exists between the groove and the first circumference of the device wafer;
(c) preparing a base wafer having a top surface;
(d) bonding the bond surface of the device wafer onto the top surface of the base wafer; and
(e) grinding and polishing the bottom surface of the device wafer until an initial thickness of the device wafer is reduced into an expected thickness to complete the composite wafer structure;
wherein during the grinding and polishing of the bottom surface of the device wafer, the margin is fractured by cracks induced at a tip of the groove and then removed;
wherein the base wafer has a second circumference, after step (d), in which a maximum radial distance on the bond surface of the device not bonded with the top surface of the base wafer is defined as a mismatch gap, and a thickness of the margin is equal to or larger than the mismatch gap;
wherein the second circumference of the base wafer is ground or laser cut until a diameter of the base wafer is reduced to be equal to that of the device wafer; and
wherein the device wafer and the base wafer are respectively formed of a semiconductor material of a first type and a second type.
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Abstract
The invention provides a method of manufacturing a composite wafer structure. In particular, the method, according to the invention, is based on the fracture mechanics theory to actively control fracture induced during the manufacture of the composite wafer structure and to further protect from undesired edge damage. Thereby, the method, according to the invention, can enhance the yield rate of industrial mass production regarding the composite wafer structure.
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Citations
28 Claims
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1. A method of manufacturing a composite wafer structure, comprising the steps of:
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(a) preparing a device wafer having a first circumference, a bond surface and a bottom surface; (b) forming a groove on the bond surface along the first circumference of the device wafer, wherein a margin exists between the groove and the first circumference of the device wafer; (c) preparing a base wafer having a top surface; (d) bonding the bond surface of the device wafer onto the top surface of the base wafer; and (e) grinding and polishing the bottom surface of the device wafer until an initial thickness of the device wafer is reduced into an expected thickness to complete the composite wafer structure; wherein during the grinding and polishing of the bottom surface of the device wafer, the margin is fractured by cracks induced at a tip of the groove and then removed; wherein the base wafer has a second circumference, after step (d), in which a maximum radial distance on the bond surface of the device not bonded with the top surface of the base wafer is defined as a mismatch gap, and a thickness of the margin is equal to or larger than the mismatch gap; wherein the second circumference of the base wafer is ground or laser cut until a diameter of the base wafer is reduced to be equal to that of the device wafer; and wherein the device wafer and the base wafer are respectively formed of a semiconductor material of a first type and a second type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of manufacturing a composite wafer structure, comprising the steps of:
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(a) preparing a device wafer having a first circumference, a bond surface, and a bottom surface; (b) performing a hydrogen ion implantation process for the bond surface of the device wafer at a region along the first circumference and with a margin apart from the first circumference, such that at the region, hydrogen ions are implanted in the device wafer from near the bond surface to a predetermined depth underneath the bond surface; (c) preparing a base wafer having a top surface; (d) bonding the bond surface of the device wafer onto the top surface of the base wafer; (e) performing an annealing treatment to aggregate the implanted hydrogen ions into micro voids distributed in the device wafer from near the bond surface to the predetermined depth underneath the bond surface; and (f) grinding and polishing the bottom surface of the device wafer until an initial thickness of the device wafer is reduced into an expected thickness to complete the composite wafer structure; wherein during the grinding and polishing of the bottom surface of the device wafer, the margin is fractured by the micro voids and then removed; wherein the base wafer has a second circumference, after the step of bonding the bonding surface of the device wafer onto the top surface of the base wafer, a maximum radial distance on the bond surface of the device not bonded with the top surface of the base wafer is defined as a mismatch gap, and a thickness of the margin is equal to or larger than the mismatch gap; and wherein the second circumference of the base wafer is ground or laser cut until a diameter of the base wafer is reduced to be equal to that of the device wafer; and wherein the device wafer and the base wafer are formed of a semiconductor material of a first type and a second type. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method of manufacturing a composite wafer structure, comprising the steps of:
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(a) preparing a device wafer having a first circumference, a bond surface and a bottom surface; (b) forming a groove on the bond surface along the first circumference of the device wafer, wherein a margin exists between the groove and the first circumference of the device wafer; (c) preparing a base wafer having a top surface; (d) bonding the bond surface of the device wafer onto the top surface of the base wafer; and (e) grinding and polishing the bottom surface of the device wafer until an initial thickness of the device wafer is reduced into a thickness to complete the composite wafer structure; wherein during the grinding and polishing of the bottom surface of the device wafer, the margin is fractured by cracks induced at a tip of the groove and then removed; and wherein the device wafer is formed of a first semiconductor material, and the base wafer is formed of a second semiconductor material different from the first semiconductor material. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23)
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24. A method of manufacturing a composite wafer structure, comprising the steps of:
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(a) preparing a device wafer having a first circumference, a bond surface and a bottom surface; (b) forming a hydrogen ion implantation process for the bond surface of the device wafer at a region along the first circumference and with a margin apart from the first circumference, such that at the region, hydrogen ions are implanted in the device wafer from near the bond surface to a depth underneath the bond surface; (c) preparing a base wafer having a top surface; (d) bonding the bond surface of the device wafer onto the top surface of the base wafer; (e) performing an annealing treatment to aggregate the implanted hydrogen ions into micro voids distributed in the device wafer from near the bond surface to the depth underneath the bond surface; and (f) grinding and polishing the bottom surface of the device wafer until an initial thickness of the device wafer is reduced into a thickness to complete the composite wafer structure; wherein during the grinding and polishing of the bottom surface of the device wafer, the margin is fractured by cracks induced at a tip of the groove and then removed; and wherein the device wafer is formed of a first semiconductor material, and the base wafer is formed of a second semiconductor material different from the first semiconductor material; and wherein the second semiconductor material is a silicon material, and the first semiconductor material is one selected from the group consisting of a SiGe material, a LiNbO3 material, a sapphire material, and an oxide material. - View Dependent Claims (25, 26, 27, 28)
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Specification