Oxide semiconductors and thin film transistors comprising the same

• US 7,816,680 B2
• Filed: 06/19/2008
• Issued: 10/19/2010
• Est. Priority Date: 05/29/2008
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Sun-il, Kim, Sang-wook, Kim, Chang-jung
• Primary Examiner(s): Pham; Long
• Application Number:
  US12/213,399
• Publication Number:
  US 20090294764A1
• Time in Patent Office: 852 Days
• Field of Search: 257/43, 257/72, 257/64, 257/75, 257/65, 257/66, 257/70
• US Class Current: 257/43
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

Provided are oxide semiconductors and thin film transistors of the same. An oxide semiconductor includes Zn, In and Hf. The amount of Hf is in the range of about 2-16 at %, inclusive, based on the total amount of Zn, In, and Hf. A thin film transistor includes a gate and a gate insulating layer arranged on the gate. A channel corresponding to the gate is formed on the gate insulating layer. The channel includes an oxide semiconductor. The semiconductor oxide includes Zn, In and Hf. The amount of Hf is in the range of about 2-16 at %, inclusive, based on the total amount of Zn, In, and Hf. A source and a drain contact respective sides of the channel.

Claims

1. An oxide semiconductor comprising Zn, In and Hf, an amount of Hf being in the range of about 2-16 at %, inclusive, based on a total amount of Zn, In, and Hf.

2. The oxide semiconductor of claim 1, wherein a structure of the oxide semiconductor is amorphous and the amount of Hf is in the range of about 3-16 at %, inclusive, based on the total amount of Zn, In, and Hf.

3. The oxide semiconductor of claim 1, wherein a structure of the oxide semiconductor is amorphous and the amount of Hf is in the range of about 3.8-11 at %, inclusive, based on the total amount of Zn, In, and Hf.

4. The oxide semiconductor of claim 1, wherein a structure of the oxide semiconductor is amorphous and the amount of Hf is in the range of about 5-11 at %, inclusive, based on the total amount of Zn, In, and Hf.

5. The oxide semiconductor of claim 1, wherein an amount of Zn is in the range of about 10-60 at %, inclusive, based on the total amount of Zn, In, and Hf.

6. The oxide semiconductor of claim 1, wherein an amount of Zn is in the range of about 31-46 at %, inclusive, based on the total amount of Zn, In, and Hf.

7. The oxide semiconductor of claim 1, wherein an amount of In is in the range of about 30-90 at %, inclusive, based on the total amount of Zn, In, and Hf.

8. The oxide semiconductor of any one of claim 1, wherein an amount of In is in the range of about 51-54 at %, inclusive, based on the total amount of Zn, In, and Hf.

9. An oxide thin film transistor comprising:

a gate;

a channel formed to corresponding the gate, the channel comprising Zn, In and Hf, an amount of Hf being in the range of about 2-16 at %, inclusive, based on a total amount of Zn, In, and Hf;

a gate insulating layer formed between the gate and the channel; and

a source and a drain contacting respective sides of the channel.

10. The oxide thin film transistor of claim 9, wherein the amount of Hf is in the range of about 3-16 at %, inclusive, based on the total amount of Zn, In, and Hf in the channel, and the oxide semiconductor is amorphous.

11. The oxide thin film transistor of claim 9, wherein the amount of Hf is in the range of about 3.8-11 at %, inclusive, based on the total amount of Zn, In, and Hf in the channel, and the oxide semiconductor is amorphous.

12. The oxide thin film transistor of claim 9, wherein the amount of Hf is in the range of about 5-11 at %, inclusive, based on the total amount of Zn, In, and Hf in the channel, and the oxide semiconductor is amorphous.

13. The oxide thin film transistor of claim 9, wherein an amount of Zn is in the range of about 10-60 at %, inclusive, based on the total amount of Zn, In, and Hf.

14. The oxide thin film transistor of claim 9, wherein an amount of Zn is in the range of about 31-46 at %, inclusive based on the total amount of Zn, In, and Hf.

15. The oxide thin film transistor of claim 9, wherein an amount of In is in the range of about 30-90 at %, inclusive, based on the total amount of Zn, In, and Hf.

16. The oxide thin film transistor of claim 9, wherein an amount of In is in the range of about 51-54 at %, inclusive, based on the total amount of Zn, In, and Hf.