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Semiconductor device

  • US 7,816,702 B2
  • Filed: 10/03/2008
  • Issued: 10/19/2010
  • Est. Priority Date: 10/05/2007
  • Status: Expired due to Fees
First Claim
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1. The semiconductor device comprising on a substrate, a first electrode for injecting electrons:

  • a second electrode for injecting holes;

    a light emitting unit electrically connected to the first and second electrodes and emitting light by being injected with the electrons and holes by applying voltages to both electrodes;

    a mirror having a function of reflecting the light emitted from the light emitting unit,wherein the light emitting unit includes a thin film installed on the substrate and a first insulating film having a first permittivity, which is installed on the thin film,the mirror is formed by periodically and alternately disposing a plurality of second insulating films having a second permittivity different from the first permittivity and a plurality of third insulating films having a third permittivity different from the second permittivity on the first insulating film to be opposed to each other by a predetermined gap,the film thickness of the thin film is thinner than those of the first and second electrodes, andwherein the thin film, and both the first electrode and the second electrode are made of a IV-group semiconductor.

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